EDC Mod 3

The barrier potential for silicon is

• 0.6 V

• 0.7 V

• 0.3 V

• 1,1 V

The effect of Forward bias to pn junction

• increases the resistivity

• decreases the conductivity

• increases the conductivity

When a p-type semiconductor is suitably joined to n-type semiconductor, the contact surface is called

(a)  

The potential difference across the depletion layer is called

(a)  

The layer in pn junction where no movable charge carriers are present is called

(a)  

The typical barrier potential for germanium is :

(a)  

Applying external Voltage to the Pn Junction is called ----------

(a)  

When external d.c. voltage applied to the junction cancels the potential barrier, thus permitting current flow, it is called ----------------------

(a)  

When the external d.c. voltage applied to the junction increases the potential barrier , it is called ---------------

(a)  

A crystal diode has ====== terminals

(a)