EE211B Quizizz #5

EE211B Quizizz #5

University

8 Qs

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EE211B Quizizz #5

EE211B Quizizz #5

Assessment

Quiz

Physics

University

Medium

Created by

Electronics Physical

Used 2+ times

FREE Resource

8 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

In an intrinsic semiconductor, electron and hole concentrations are equal at which temperature?

0 K

Low Temperature

High Temperature

All Temperature

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

In an intrinsic semiconductor, the Fermi level

may be anywhere in the forbidden energy gap

lies near or at the center of forbidden energy gap

is near the conduction band

is near the valence band

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

For silicon, the energy gap at 300 K is

1.1 W

1.1 J

1.1 eV

None of these

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Consider a semiconductor moderately doped with Arsenic atoms at room temperature. Where do you expect the Fermi level to be?

in the lower half of the bandgap

near the middle of the bandgap

in the upper half of the bandgap

inside the conduction band

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

According to Band Theory of Solids, what can be said about the relationship between band-gap width and the tendency of material to conduct electricity?

The greater the band-gap width the less conductive is the material

The lesser the band-gap width the more insulating is the material

The greater the band-gap width the more conductive is the material

6.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

In doped (extrinsic) semiconductors, the predominant current carriers are called majority charge carriers, and secondary carriers are called minority. Which statement is true for N-and P-type semiconductors:

In N-type semiconductors, electrons are majority carriers and holes are minority carriers

In P-type semiconductors, majority carriers are electrons, and minority charge carriers are holes

In N-type semiconductors, both types of carriers are equally present

7.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

When Silicon (Si) is doped with one of the following elements, it acquires P-type conductivity (holes are the majority carriers). Choose the one:

Phosphorus (P), valence V

Tin (Sn), valence IV

Boron (B), valence III

8.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Silicon is doped with boron to a concentration of 4 × 1017 𝑎𝑡𝑜𝑚𝑠/𝑐𝑚3. Assume the intrinsic carrier concentration of silicon to be 1.5 × 1010/𝑐𝑚3 at 300 K. Compared to un - doped silicon, the Fermi level of doped silicon.

Goes down by 0.13 eV

Goes up by 0.13 eV

Goes down by 0.44 eV

Goes up by 0.44 eV