In an intrinsic semiconductor, electron and hole concentrations are equal at which temperature?

EE211B Quizizz #5

Quiz
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Physics
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University
•
Medium
Electronics Physical
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8 questions
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1.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
0 K
Low Temperature
High Temperature
All Temperature
2.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
In an intrinsic semiconductor, the Fermi level
may be anywhere in the forbidden energy gap
lies near or at the center of forbidden energy gap
is near the conduction band
is near the valence band
3.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
For silicon, the energy gap at 300 K is
1.1 W
1.1 J
1.1 eV
None of these
4.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Consider a semiconductor moderately doped with Arsenic atoms at room temperature. Where do you expect the Fermi level to be?
in the lower half of the bandgap
near the middle of the bandgap
in the upper half of the bandgap
inside the conduction band
5.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
According to Band Theory of Solids, what can be said about the relationship between band-gap width and the tendency of material to conduct electricity?
The greater the band-gap width the less conductive is the material
The lesser the band-gap width the more insulating is the material
The greater the band-gap width the more conductive is the material
6.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
In doped (extrinsic) semiconductors, the predominant current carriers are called majority charge carriers, and secondary carriers are called minority. Which statement is true for N-and P-type semiconductors:
In N-type semiconductors, electrons are majority carriers and holes are minority carriers
In P-type semiconductors, majority carriers are electrons, and minority charge carriers are holes
In N-type semiconductors, both types of carriers are equally present
7.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
When Silicon (Si) is doped with one of the following elements, it acquires P-type conductivity (holes are the majority carriers). Choose the one:
Phosphorus (P), valence V
Tin (Sn), valence IV
Boron (B), valence III
8.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Silicon is doped with boron to a concentration of 4 × 1017 𝑎𝑡𝑜𝑚𝑠/𝑐𝑚3. Assume the intrinsic carrier concentration of silicon to be 1.5 × 1010/𝑐𝑚3 at 300 K. Compared to un - doped silicon, the Fermi level of doped silicon.
Goes down by 0.13 eV
Goes up by 0.13 eV
Goes down by 0.44 eV
Goes up by 0.44 eV
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