Electronic Fundamentals

Electronic Fundamentals

Professional Development

41 Qs

quiz-placeholder

Similar activities

SAINS TINGKATAN 2 BAB 9 : HABA

SAINS TINGKATAN 2 BAB 9 : HABA

1st Grade - Professional Development

40 Qs

ESP Units 13 - 15 Review

ESP Units 13 - 15 Review

Professional Development

37 Qs

CLCE 3rd YEAR 2022: SENSE ORGANS QUIZ

CLCE 3rd YEAR 2022: SENSE ORGANS QUIZ

Professional Development

41 Qs

FPG APARAT DIGEST

FPG APARAT DIGEST

Professional Development

40 Qs

BIOLOGI TING 4 : BAB 14 - Sokongan

BIOLOGI TING 4 : BAB 14 - Sokongan

Professional Development

40 Qs

IPA IX PIB

IPA IX PIB

Professional Development

40 Qs

Polarity & Localization Review

Polarity & Localization Review

Professional Development

36 Qs

Ecuación de Difusión - Soluciones

Ecuación de Difusión - Soluciones

University - Professional Development

44 Qs

Electronic Fundamentals

Electronic Fundamentals

Assessment

Quiz

Science

Professional Development

Easy

Created by

Hoài Đào

Used 33+ times

FREE Resource

41 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

388. Diodes are:
a) Conductors,
b) Semi-conductors
c) Insulators

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

389. For the intrinsic conductivity of diodes
a) At 0 degrees Kelvin, a semiconductor is a non-conductor
b) At 0 degrees Celsius, a semiconductor is a non-conductor
c) At 0 degrees Kelvin, a semiconductor is a conductor

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

390. A junction diode
a) Is similar to a vacuum diode but cannot rectify
b) Has one p-n junction
c) Can handle only very small currents

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

391. In a semiconductor junction diode, electrons are the minority carriers.
a) Within the P region
b) Within the N region
c) In both the N and P regions

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

392. Forward voltage of a silicon diode is.
a) 1.7V
b) 0.7V
c) 0.3V

6.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

393. To function, i.e. conduct, a junction diode made of silicon requires a forward bias of at least
a) 0.2 V
b) 1.41 V
c) 1 V

7.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

394. If forward bias is increased from zero on a p-n junction, a rapid increase in current flow for a relatively small increase in voltage occurs.
a) When the flow of minority carriers is sufficient to cause an avalanche breakdown
b) When the depletion layer becomes larger than the space charge area
c) Only after the forward bias exceeds the potential barrier

Create a free account and access millions of resources

Create resources
Host any resource
Get auto-graded reports
or continue with
Microsoft
Apple
Others
By signing up, you agree to our Terms of Service & Privacy Policy
Already have an account?