EC3058D-Quiz1

Flexible, Wearable and Portable Electronic Devices demand -----------------------

• High speed circuits

• Ultra low power circuits

• Large area circuits

• High Noise tolerant circuits

The current in MOSFET is mainly-------------

• Bulk current

• Diffusion current

• Drift current

• Reverse bias current

Substrate bias effect in MOSFET is also known as---------------

• Source transformation effect

• Drain induced barrier lowering effect

• Pinch off effect

• Back gate effect

• Triode region

• Saturation region

• Cut off region

• Active region

For a CMOS inverter to have switching threshold V_M =V_DD/2, the theshold voltages of PMOST and NMOST should be same

• True

• False

In a resistive load inverter, static power dissipation is non zero. This is due to ----------------

• active pull up path when output is logic high

• active pull down path when output is logic high

• active pull up path when output is logic low

• active pull down path when output is logic low