WorksheetsBJT
Total questions: 25
Worksheet time: 13mins
Name
Class
Date
1.
The approximate voltage across the forward-biased base-emitter junction of a Ge BJT is
a)
0 V
b)
0.7 V
c)
0.3 V
d)
VBB
2.
In an NPN transistor, the N regions are
a)
base and emitter
b)
base and collector
c)
emitter and collector
d)
base and ground
3.
When the transistor is in cutoff, VCE is
a)
o V
b)
equal to VBE
c)
minimum
d)
equal to VCC
4.
The βDC of a transistor is its
a)
current gain
b)
voltage gain
c)
power gain
d)
internal resistance
5.
When a transistor is conducting as much as it can, it is said to be
a)
in a state of cutoff
b)
in a state of saturation
c)
in a state of reverse bias
d)
in a state of avalanche breakdown
6.
It is constructed with three doped semiconductor regions separated by two pn-junctions
a)
BJT
b)
OJT
c)
BUT
d)
BOT
7.
BJT stands for
a)
Biomedical Junction Table
b)
Binary Justified Transistor
c)
Bipolar Junction Transistor
d)
Bipolar Junction Thyristor
8.
The region of a BJT that is lightly doped and very thin compared to other two regions
a)
base
b)
emitter
c)
collector
d)
common
9.
The heavily doped region of a BJT
a)
collector
b)
base
c)
emitter
d)
common
10.
The moderately doped region of a BJT
a)
emitter
b)
collector
c)
common
d)
base
11.
The ratio of dc collector current (IC) to the dc base current (IB)
a)
alpha
b)
beta
c)
gamma
d)
theta
12.
The ratio of dc collector current (IC) to dc emitter current (IE)
a)
gamma
b)
theta
c)
beta
d)
alpha
13.
The region of transistor's operation when both junctions are forward-biased
a)
cutoff
b)
saturation
c)
partially off
d)
open
14.
The communication link between the manufacturer and the user of transistor
a)
manufacturer's datasheet
b)
manufacturer's logsheet
c)
supplier's quotation
d)
order slip
15.
The transistor's region of operation when base current is equal to zero
a)
cutoff
b)
saturation
c)
breakdown
d)
active
16.
The process of linearly increasing the amplitude of an electrical signal and is one of the major properties of a transistor
a)
purification
b)
electrification
c)
amplification
d)
doping
17.
The region of operation of a transistor where base-emitter junction has a low resistance due to forward bias and the base-collector junction has a high resistance due to reverse bias
a)
cutoff
b)
saturation
c)
breakdown
d)
active or linear
18.
an application of dc voltages to establish a fixed level of current and voltage
a)
amplification
b)
doping
c)
biasing
d)
purification
19.
The point on the transistor amplifiers characterestics being established by the resulting dc current and voltage which defines the region that will be employed for the amplification of the applied signal
a)
Operating Point
b)
Quiescent Point
c)
Q-Point
d)
All are correct
20.
This method of analysis can be applied to any voltage divider configuration in which Thevenin equivalent circuit is being used
a)
Approximate
b)
Exact
c)
Semi-approximate
d)
None is correct
21.
The emitter current is the sum of the collector current and the base current for both npn and pnp types of BJT
a)
True
b)
False
c)
Not sure
22.
Emitter current is very small compare to base current and collector current
a)
True
b)
False
c)
Could be
23.
When the transistor is in cutoff, both the base-emitter and base-collector junctions are reverse biased
a)
True
b)
False
c)
Trulse
24.
When the transistor is in saturation, base-emitter and base-collector junctions are reverse-biased
a)
True
b)
False
c)
Trulse
25.
Which of the following is not a terminal or region of a BJT?
a)
base
b)
collector
c)
drain
d)
emitter
100 %
