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Review of BJT and FET Principles and Operations

Total questions: 75

Worksheet time: 37mins

Name
Class
Date
1.
The approximate voltage across the forward-biased base-emitter junction of a Ge BJT is
a)
0 V
b)
0.7 V
c)
0.3 V
d)
VBB
2.
In an NPN transistor, the N regions are
a)
base and emitter
b)
base and collector
c)
emitter and collector
d)
base and ground
3.
When the transistor is in cutoff, VCE is
a)
o V
b)
equal to VBE
c)
minimum
d)
equal to VCC
4.
The βDC of a transistor is its
a)
current gain
b)
voltage gain
c)
power gain
d)
internal resistance
5.
When a transistor is conducting as much as it can, it is said to be
a)
in a state of cutoff
b)
in a state of saturation
c)
in a state of reverse bias
d)
in a state of avalanche breakdown
6.
It is constructed with three doped semiconductor regions separated by two pn-junctions
a)
BJT
b)
OJT
c)
BUT
d)
BOT
7.
BJT stands for
a)
Biomedical Junction Table
b)
Binary Justified Transistor
c)
Bipolar Junction Transistor
d)
Bipolar Junction Thyristor
8.
The region of a BJT that is lightly doped and very thin compared to other two regions
a)
base
b)
emitter
c)
collector
d)
common
9.
The heavily doped region of a BJT
a)
collector
b)
base
c)
emitter
d)
common
10.
The moderately doped region of a BJT
a)
emitter
b)
collector
c)
common
d)
base
11.
The ratio of dc collector current (IC) to the dc base current (IB)
a)
alpha
b)
beta
c)
gamma
d)
theta
12.
The ratio of dc collector current (IC) to dc emitter current (IE)
a)
gamma
b)
theta
c)
beta
d)
alpha
13.
The region of transistor's operation when both junctions are forward-biased
a)
cutoff
b)
saturation
c)
partially off
d)
open
14.
The communication link between the manufacturer and the user of transistor
a)
manufacturer's datasheet
b)
manufacturer's logsheet
c)
supplier's quotation
d)
order slip
15.
The transistor's region of operation when base current is equal to zero
a)
cutoff
b)
saturation
c)
breakdown
d)
active
16.
The process of linearly increasing the amplitude of an electrical signal and is one of the major properties of a transistor
a)
purification
b)
electrification
c)
amplification
d)
doping
17.
The region of operation of a transistor where base-emitter junction has a low resistance due to forward bias and the base-collector junction has a high resistance due to reverse bias
a)
cutoff
b)
saturation
c)
breakdown
d)
active or linear
18.
an application of dc voltages to establish a fixed level of current and voltage
a)
amplification
b)
doping
c)
biasing
d)
purification
19.
The point on the transistor amplifiers characterestics being established by the resulting dc current and voltage which defines the region that will be employed for the amplification of the applied signal
a)
Operating Point
b)
Quiescent Point
c)
Q-Point
d)
All are correct
20.
This method of analysis can be applied to any voltage divider configuration in which Thevenin equivalent circuit is being used
a)
Approximate
b)
Exact
c)
Semi-approximate
d)
None is correct
21.
The emitter current is the sum of the collector current and the base current for both npn and pnp types of BJT
a)
True
b)
False
c)
Not sure
22.
Emitter current is very small compare to base current and collector current
a)
True
b)
False
c)
Could be
23.
When the transistor is in saturation, base-emitter and base-collector junctions are reverse-biased
a)
True
b)
False
c)
Trulse
24.
Which of the following is not a terminal or region of a BJT?
a)
base
b)
collector
c)
drain
d)
emitter
25.

If the drain current in the figure is increased, VDS will

a)

increase

b)

decrease

c)

not change

26.

If the drain current in the figure is increased, VGS will

a)

increase

b)

decrease

c)

not change

27.

Which of the following description is not for JFET?

a)

a unipolar device

b)

a voltage-controlled device

c)

a current controlled device

28.

The channel of a JFET is between the

a)

gate and drain

b)

drain and source

c)

gate and source

d)

input and output

29.
A JFET always operates with
a)
the gate-to-source pn junction reverse-biased
b)
the gate-to-source pn junction forward-biased
c)
the drain connected to ground
d)
the gate connected to the source
30.

The constant-current region of a FET lies between

a)

cutoff and saturation

b)

cutoff and pinch-off

c)

0 and IDSS

d)

pinch-off and breakdown

31.

IDSS is

a)

the drain current with the source shorted

b)

the drain current at cutoff

c)

the maximum possible drain current for JFET

d)

the midpoint drain current

32.

For VGS = 0 V, the drain current becomes constant when VDS exceeds

a)

cutoff

b)

VDD

c)

VP

d)

0 V

33.

A certain JFET datasheet gives VGS(off) = - 8 V. What is the value of the pinch-off voltage?

a)

cannot be determined

b)

- 4 V

c)

- 8 V

d)

+ 8 V

34.
A D-MOSFET operates in
a)
the depletion mode only
b)
the enhancement mode only
c)
the ohmic region only
d)
both the depletion and enhancement modes
35.

An n-channel D-MOSFET with a positive VGS is operating in

a)

the depletion mode

b)

the enhancement mode

c)

cutoff

d)

saturation

36.

A certain p-channel E-MOSFET has a VGS(th) = -2 V. If VGS = 0 V, the drain current is

a)

0 A

b)

ID(on)

c)

maximum

d)

IDSS

37.

In an E-MOSFET, there is no drain current until VGS

a)

reaches VGS(th)

b)

is positive

c)

is negative

d)

equals 0 V

38.

which of the following is the n-channel E-MOSFET device

a)
b)
c)
d)
39.

which of the following is the p-channel D-MOSFET device

a)
b)
c)
d)
40.

A certain p-channel E-MOSFET has a VGS(th) = -2 V. If VGS = 0 V, the drain current is

a)

0 A

b)

ID(on)

c)

Maximum

d)

IDSS

41.

An n-channel D-MOSFET with a positive VGS is operating in

a)

depletion mode

b)

cutoff

c)

enhancement mode

d)

saturation

42.

A p-channel D-MOSFET with a positive VGS is operating in

a)

depletion mode

b)

cutoff

c)

enhancement mode

d)

saturation

43.

A p-channel D-MOSFET with a negative VGS is operating in

a)

depletion mode

b)

cutoff

c)

enhancement mode

d)

saturation

44.

An n-channel D-MOSFET with a negative VGS is operating in

a)

depletion mode

b)

cutoff

c)

enhancement mode

d)

saturation

45.

This is a plot of the device's output current vs output voltage

a)

drain characteristic curve

b)

collector characteristic curve

c)

transfer characteristic curve

d)

output characteristic curve

46.

If the drain current in the figure is increased, VGS will

a)

increase

b)

decrease

c)

not change

47.

At what region where JFET can actually be employed as a variable resistor whose resistance is controlled by the applied gate-to-source voltage?

a)

ohmic region

b)

constant current area

c)

saturation region

d)

cutoff region

48.

MOSFET means

a)

metal oxide semiconductor field effect transistor

b)

mineral oxide semiconductor field effect transistor

c)

metal semiconductor field effect transistor

d)

metal oxygen semiconductor field effect transistor

49.

This type of field effect transistor is having an insulator between the gate and the channel

a)

JFET

b)

MOSFET

c)

MESFET

d)

BJT

50.

The material normally used as an insulator in an insulated gate field effect transistor is

a)

silicon oxide

b)

silicon dioxide

c)

carbon dioxide

d)

silicon bromide

51.

The substrate of this FET device is made up of GaAs. It is intended for high mobility of charge carriers for faster applications

a)

BJT

b)

JFET

c)

MOSFET

d)

MESFET

52.

Barriers established by depositing a metal such as tungsten on an n-type channel

a)

shockley barriers

b)

schottky barriers

c)

shocking barriers

d)

shoki barriers

53.

MESFET means

a)

metal semiconductor field effect transistor

b)

metal effect semiconductor field effect transistor

c)

metal energy semiconductor field effect transistor

d)

metal efficiency semiconductor field effect transistor

54.

For a p-channel JFET, the direction of the current flow is

a)

from drain to source

b)

from source to drain

c)

from gate to source

d)

from gate to drain

55.

The FET terminal analogous to emitter terminal of a BJT is

a)

drain

b)

gate

c)

source

d)

ground

56.

The FET terminal analogous to base terminal of a BJT is

a)

drain

b)

source

c)

gate

d)

ground

57.

Which of the following device is NOT using shockleys equation?

a)

JFET

b)

D-MOSFET

c)

E-MOSFET

d)

D-MESFET

58.

Which of the following equation is use in an E-MOSFET device?

a)

IC = βIB

b)

ID = IDSS(1 - (VGS / VGSoff))2

c)

ID = k (VGS - VGSth)2

d)

x2 + y2 = z2

59.

It has become one of the most important devices used in the design and construction of IC for digital computers

a)

JFET

b)

MOSFET

c)

MESFET

d)

BJT

60.

FET amplifier is a _____________________ control device.

a)

current

b)

voltage

c)

power

d)

resistance

61.

What type of biasing this amplifier have?

a)

voltage divider biasing

b)

fixed biasing

c)

self biasing

d)

emitter-stabilized biasing

62.

What is the advantage FET amplifier has as compare to BJT amplifier

a)

consume more power

b)

consume less power

c)

consume less current

d)

consume less voltage

63.

Which of the FET amplifiers below has input and output voltage are in phase?

a)

common source

b)

common drain

c)

common gate

d)

common base

64.

Which of the FET amplifiers below has voltage gain greater than 1?

a)

common source

b)

common gate

c)

common drain

d)

common collector

65.

What amplifier configuration has moderate voltage and current gain and high power gain?

a)

common emitter

b)

common collector

c)

common base

d)

common drain

66.
The purpose of biasing is to establish a/an ________ about which variations in current and voltage can occur in response to an input signal
a)
Operating Point
b)
Saturation Point
c)
Linear Point
d)
Active Point
67.
In Electronics, this term means linking of two circuits or devices which can be capacitive, inductive, resistive or direct
a)
interconnecting
b)
Joining
c)
Combining
d)
Coupling
68.
The capacitors in the input and output side of the amplifiers network used to
a)
blocks DC and allows AC signal
b)
blocks DC and AC signal
c)
allows DC and blocks AC signal
d)
allows DC and AC signal
69.
The input current of a common base configuration is
a)
collector current 
b)
base current
c)
emitter current
d)
diode current
70.
The signal output voltage for a common emitter transistor is
a)
Base Voltage (VB)
b)
Collector Voltage (VC)
c)
Emitter Voltage (VE)
d)
Collector Supply Voltage (VCC)
71.
It is a combination of circuit elements, properly chosen, that best approximates the actual behavior of a semiconductor device under specific operating conditions
a)
Supply
b)
Bias
c)
Amplifier
d)
Model
72.
when an element was removed in the analysis because of the capacitor, what do you call on that capacitor?
a)
reactive capacitor
b)
coupling capacitor
c)
inductive capacitor
d)
bypass capacitor
73.
The non-resistive component of impedance in an AC circuit, arising from the effect of inductance or capacitance or both and causing the current to be out of phase with the electromotive force causing it is known as
a)
resistance
b)
conductance
c)
reactance
d)
admittance
74.
generally for the common-base configuration, the input impedance is relatively _____ and the output impedance quite _____
a)
high, low
b)
low, high
c)
high, high
d)
low, low
75.
the values from this model are used on specification sheets
a)
re-model
b)
hybrid parameter model
c)
pi-model
d)
giacoletto model

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