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Quiz on Module 1

Total questions: 15

Worksheet time: 55mins

Name
Class
Date
1.

Which of the following is the correct relationship between base and emitter current of a BJT?

a)

IB = β IE

b)

IB = IE

c)

IB = (β + 1) IE

d)

IE = (β + 1) IB

2.

For best operation of a BJT, which region must the operating point be set at?

a)

Active region

b)

Cutoff region

c)

Saturation region

d)

Reverse active region

3.

BJT is biased to _________

a)

Work as a switch

b)

Prevent thermal runaway

c)

Increase DC collector current

d)

Operate it in the saturation region

4.

The biasing circuit that gives best stability to Q point is

a)

base resistance biasing

b)

feedback resistor biasing

c)

potential divider biasing

d)

emitter resistor biasing

5.

The potential divider biasing is used in amplifiers to

a)

limit the input ac signal going to the base

b)

reduce dc base current

c)

reduce the cost of the circuit by limiting the number of resistors

d)

make the operating point almost independent of β

6.

A transistor with ß = 120 is biased to operate at a dc collector current of 1.2 mA. Find the value of gm.

a)

12mA/V

b)

24 mA/V

c)

36 mA/V

d)

48 mA/V

7.

A transistor operating with nominal gm of 60 mA/V has a ß that ranges from 50 to 200. Also, the bias circuit, being less than ideal, allows a 20% variation in Ic. What is the smallest value found of the resistance looking into the base?

a)

347 ohm

b)

694 ohm

c)

1041 ohm

d)

1388 ohm

8.

A designer wishes to create a BJT amplifier with a gm of 50 mA/V and a base input resistance of 2000 O or more. What is the minimum ß he can tolerate for the transistor used?

a)

100

b)

150

c)

200

d)

250

9.

The SI units of transconductance is

a)

Ampere/ volt

b)

Volt/ ampere

c)

Ohm

d)

Siemens

10.

Consider the following circuit. Process transconductance parameter = 0.50 mA/V2, W/L=1, Threshold voltage = 3V, VDD = 20V. Find the operating point of circuit.

a)

20V, 25mA

b)

13V, 22mA

c)

12.72V, 23.61mA

d)

20V, 23.61mA

11.

For a MOSFET, the pinch-off voltage is -3V. Gate to source voltage is 20V. W/L ratio is 5. Process transconductance parameter is 40μA/V2. Find drain to source current in saturation.

a)

0.10 mA

b)

0.05mA

c)

– 0.05mA

d)

– 50A

12.

Find the gate voltage for voltage divider having R1=R2=1KΩ and VDD=5V?

a)

1V

b)

5V

c)

3V

d)

2.5V

13.

What is trans-conductance?

a)

Ratio of change in drain current to change in collector current

b)

Ratio of change in drain current to change in gate to source voltage

c)

Ratio of change in collector current to change in drain current

d)

Ratio of change in collector current to change in gate to source voltage

14.

For a FET, graph is drawn by taking voltage VGS in X axis and drain current in Y axis, if the value of X changes from 10 to 20 results in change in value of Y axis from 2 to 3. What is the value of trans conductance?

a)

1

b)

2

c)

0.1

d)

0.01

15.

In a small signal equivalent model of an FET, What does gm VGS stand for?

a)

A pure resistor

b)

Voltage controlled current source

c)

Current controlled current source

d)

Voltage controlled voltage source