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Thin film Technology

Total questions: 26

Worksheet time: 52mins

Name
Class
Date
1.

Which of the following method/s is/are used to improve the adhesion of a thin film?

a)

High-energy pre-sputtering

b)

Low-energy pre-sputtering

c)

Photo resist primer

d)

Chemical etching/cleaning

2.

Which deposition technique(s) should you use to get uniform thickness over an uneven substrate with trenches?

a)

Chemical Vapor Deposition

b)

Sputtering

c)

Physical Vapor Deposition (PVD) by evaporation

d)

Atomic Layer Deposition

3.

For which conditions will a thin film have larger grains?

a)

High deposition rate and high substrate temperature

b)

High deposition rate and low substrate temperature

c)

Low deposition rate and high substrate temperature

d)

Low deposition rate and low substrate temperature

4.

Spectroscopic Ellipsometry is an optical technique used for

a)

thickness

b)

optical constants

c)

micro structure

d)

All of these

5.

Which of the following is not a stage of annealing?

a)

Grain size reduction

b)

Dispersion hardening

c)

Solid solution strengthening

d)

Strain hardening

6.

According to Drude's model, which of the following statement is incorrect

a)

Electrons are free and independent;

b)

Motion of electrons is modeled as kinetic theory of gases;

c)

Compensating positive ions are immobile;

d)

After collision with ions, the velocity of electron is zero

7.

The increase in liquid hydro static pressure

a)

Increases the breakdown strength

b)

Decreases the breakdown strength

c)

Does not affect the breakdown strength

d)

None of these

8.

Liquids dielectrics are mainly used as

a)

Thick film technology

b)

Thin film technology

c)

Thin and thick film technology

d)

None of the mentioned

9.

A TCO is a semiconductor which has:

a)

high electrical resistivity and high optical transparency

b)

high electrical conductivity and high optical transparency

c)

high electrical conductivity and low optical transparency

d)

ow electrical resistivity and low optical transparency

10.

Fine grain sizes are obtained by

a)

slow cooling

b)

increasing nucleation

c)

decreasing growth rate

d)

Fast cooling.

11.

Film Thickness Monitor (FTM) crystals ----------are used to determine the thickness of material deposited

a)

quartz

b)

Silicon

c)

GaInP

d)

SiC

12.

Metals are normally deposited using which of the following deposition processes.

a)

Spin-on

b)

Thermal oxidation

c)

Physical vapor deposition

d)

Chemical vapor deposition

13.

SI unit of conductivity of material is

a)

Ω m

b)

Ω

c)

Ω-1m

d)

Ω-1m-1

14.

Energy band gap size for insulators is in the range ________ eV.

a)

1-2

b)

2-3

c)

3-4

d)

> 4

15.

Which of the following factors does not influence the variety and quality of metal?

a)

Rate of heating and cooling

b)

Quenching medium

c)

Grain size

d)

Furnace

16.

How does the rate of cooling affect the hardness of the metal?

a)

Slow cooling, hard material

b)

Slow cooling, soft material

c)

Rapid cooling, soft material

d)

No effective change

17.

Which of the following is not a stage of annealing?

a)

Heating

b)

Soaking

c)

Tempering

d)

Quenching

18.

Graphene is a:

a)

wide band-gap semiconductor

b)

gapless-band semiconductor

c)

a narrow bandgap semiconductor

d)

not a semiconductor but behaves like graphite

19.

Which statement is incorrect about semiconductors?

a)

charge carrier may be either a positive hole or an electron

b)

Ga-doped Si is a p-type semiconductor

c)

n- and p-type semiconductors are intrinsic semiconductors

d)

Doping Si with As introduces a donor level below the conduction band

20.

When the source of light is not sun light then the photo voltaic cell is used as _______

a)

Photo diode

b)

Photo voltaic cell

c)

Photo detector

d)

Photo transmitter

21.

What is the insulator used in most MOS-FET?

a)

CO2

b)

SiO2

c)

mica

d)

plastic

22.

When the source of light is not sun light then the photo voltaic cell is used as _______

a)

diode

b)

photodiode

c)

transistor

d)

solarcell

23.

the frequency range of infrared region

a)

430 THz down to 300 GHz

b)

421 THz down to 200 GHz

c)

100 THz down to 4 MHz

d)

1 THz down to 4 MHz

24.

using the Scherrer formula we found

a)

grain size

b)

crystallite size

c)

particle size

d)

None of these

25.

How is the process of film deposition carried out in cathode sputtering?

a)

Slower than evaporation method

b)

Faster than evaporation method

c)

Similar to same as evaporation method

d)

All of the mentioned

26.

Which of the following method/s is/are used to improve the adhesion of a thin film?

a)

High-energy pre-sputtering

b)

Low-energy pre-sputtering

c)

Photo resist primer

d)

Chemical etching/cleaning