wayground logo

Free Printable Worksheets

Font size

S
M
L
XL
Worksheets

CRYSTALLINE AND SOLID STATE_2

Total questions: 15

Worksheet time: 43mins

Name
Class
Date
1.

An extra atom present in the void between atoms is called "vacancy"

a)

True

b)

False

2.

A defect where atoms occupy the empty space between existing atoms within a crystal

a)

Interstitial Defect

b)

Frenkel Defect

c)

Vacancy Defect

d)

Schottky Defect

3.

Define Schottky defect.

a)

When an atom occupies a definite position in the lattice that is not normally occupied in the perfect crystal.

b)

An atom is missing from its regular atomic site.

c)

An ion displaced from a regular site to an interstitial site in ionic crystal.

d)

A pair of one cation and one anion missing from regular sites in ionic crystal.

4.

Arise due to cationic vacancies. It occurs when positive ions are missing from its crystal lattice.


To maintain electrical neutrality, one of the nearest metal ion acquires two positive charge.


The above statement describe about

a)

Metal Deficiency defect

b)

Metal excess defect due to anionic vacancies.

c)

Metal excess defect due to extra cations

d)

Metal addition defect

5.

Materials which can conduct electricity better than insulator, but not as well as conductors represent ___________

a)

superconductor

b)

semiconductor

c)

diode

d)

graphite

6.

Intrinsic semiconductors are those

a)

Which are made of semiconductor material in its purest form

b)

Which have high conductivity

c)

Which have more holes than electrons

d)

Which have more electrons than holes

7.

The process of adding an impurity to an intrinsic semiconductor is called

a)

Atomic modification

b)

Ionization

c)

Recombination

d)

Doping

8.

These are the characteristics of Trivalent impurities except

a)

3 valence electrons

b)

producing a "hole"

c)

produce p-type semiconductors

d)

Antimony, arsenic, and phosphorus are the examples

9.

Choose the statements that describe P-Type semiconductor. You may choose more than one answer.

a)

The addition of trivalent impurities such as boron, aluminum or gallium.

b)

Known as Donor Impurities.

c)

The charge carrier is effectively a positively charged hole.

d)

The addition of pentavalent impurities (atoms with 5 Ve-) such as antimony, arsenic or phosphorous

10.

Identify the n-doped semiconductor.

a)
b)
11.

What term is used to describe this model of metallic bonding?

a)

Electron sea model

b)

VSEPR

c)

Valence Bond Theory

d)

Molecular Orbital Theory

12.

Explain why Magnesium has a higher melting point (650 °C) than sodium (97.79 °C)

4 lines
13.

CONDUCTION BAND is

a)

the energy difference between the valence and conduction band.

b)

band of orbitals that are filled or partially filled by valance electron.

c)

unoccupied bands in which electron are free to migrate.

d)

lower MOs are occupied by valence e-

14.

Valence band overlapped with the conduction band. This statement refer to:

a)

Insulator

b)

Conductor

c)

Semiconductor

d)

Diode

15.

Current flows occur when

a)

electrons move from conduction band to valence band

b)

electrons move from valence band to conduction band