WorksheetsINDUSTRIAL ELECTRONICS
Total questions: 20
Worksheet time: 10mins
POWER ELECTRONICS is ---------------------
The study of a continuously variable signal
The study of digital signals and the engineering of devices
The study of technology concerned with the combined use of electronics and light.
The study of Switching electronic circuits in order to control the flow of electrical energy.
In power electronics the power Loss is __________
Less
High
moderate
What is the role of power electronics in the industry ?
electric and hybrid vehicles
Renewable energy systems
bulk utility energy storage
ALL THE ABOVE
NONE OF THE ABOVE
Which layer is called as drift layer?
1
2
3
What is the purpose of n- drift layer in power diode ?
Its function is to absorb the depletion layer of the reverse biased p+n- junction.
Wider the drift region the higher breakdown voltages.
None of the above
Even after the forward current reduces to zero value, a practical diode continues to conduct in the reverse direction for a while due to the
stored charges in the depletion region
high junction temperature
none of the above
When the p-n junction diode is reversed biased, the width of the depletion region __________
Remains Constant
Increases
Decreases
Which of the below mentioned statements is false regarding a p-n junction diode?
Diode are uncontrolled devices
Diodes are rectifying devices
Diodes are unidirectional devices
Diodes have three terminals
Lets assume that the doping density in the p-region is 10-9 cm-3 & in the n-region is 10-17cm-3, as such the p-n junction so formed would be termed as a
p– n–
p+ n–
p– n+
p+ n+
1. An ideal diode has _________ &__________
Some forward voltage drop, some reverse recovery time
High switching losses, high reverse voltage drop
No forward voltage drop, negligible reverse recovery time
No reverse recovery time, high leakage current
As the switch (shown in the green) is pressed, the voltage across the diode(ideally)
Increases to Vs/R
Increases to Vs
Decreases to zero
Remains Constant
Which of the following diodes uses a metal-semiconductor junction?
General purpose diodes
Fast recovery diodes
Schottky diode
None of the above
8. As compared to a p-n junction diode(of the same rating), a Schottky diode has ___________
higher cut-in voltage
lower reverse leakage current
higher operating frequency
higher switching time
A Schottky diode can be switchd off much faster than an equivalent p-n junction diode due to its
higher operating frequency
no recombination of charges
more compact structure
The three terminals of the IGBT are
base, emitter & collector
gate, source & drain
gate, emitter & collector
base, source & drain
In IGBT, the p+ layer connected to the collector terminal is called as the
Drift layer
Injection layer
Body layer
Collector Layer
In IGBT, the n– layer above the p+ layer is called as the
Drift layer
Injection layer
Body layer
Collector Layer
The major drawback of the first generation IGBTs was that, they had
Latch-up problems
Noise & secondary breakdown problems
Sluggish operation
Latch-up & secondary breakdown problems
A latched up IGBT can be turned off by
Forced commutation of current
Forced commutation of voltage
Use of a snubber circuit
The approximate equivalent circuit of an IGBT consists of
a BJT & a MOSFET
a MOSFET & a MCT
Two BJTs
Two MOSFETs
