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WorksheetsTLA 4.2 FET Familiarization
Total questions: 10
Worksheet time: 3mins
On the drain characteristic curve of a JFET for VGS = 0, the pinch-off voltage is
below the ohmic area.
between the ohmic area and the constant current area.
between the constant current area and the breakdown region.
above the breakdown region.
For a JFET, the value of VDS at which ID becomes essentially constant is the
pinch-off voltage.
cutoff voltage.
breakdown voltage.
ohmic voltage.
The value of VGS that makes ID approximately zero is the
pinch-off voltage.
cutoff voltage.
breakdown voltage.
ohmic voltage.
For a JFET, the change in drain current for a given change in gate-to-source voltage, with the drain-to-source voltage constant, is
breakdown.
reverse transconductance.
forward transconductance.
self-biasing.
High input resistance for a JFET is due to
a metal oxide layer.
a large input resistor to the device.
an intrinsic layer.
the gate-source junction being reverse-biased.
A dual-gated MOSFET is
a depletion MOSFET.
an enhancement MOSFET.
a VMOSFET.
either a depletion or an enhancement MOSFET.
Which of the following devices has the highest input resistance?
diode
JFET
MOSFET
bipolar junction transistor
Identify the p-channel E-MOSFET.
a
b
c
d
Identify the n-channel D-MOSFET.
a
b
c
d
Identify the n-channel E-MOSFET
a
b
c
d
