Free Printable AMC GAME 1

1.

Enhancement MOSFET is a normally off device

a)

True

b)

False

2.

NMOS will have

a)

p substrate and n channel

b)

n substrate and n channel

c)

n substrate and p channel

d)

p substrate and p channel

3.

MOSFET is a _____ terminal device

a)

2

b)

3

c)

4

d)

5

4.

Body of NMOS is connected to least potential in a circuit

a)

True

b)

False

5.

Threshold voltage of an PMOS is positive

a)

True

b)

False

6.

When $V_{DS}$ is small, MOSFET act as a linear resistance

a)

True

b)

False

7.

Oxide capacitance of a MOSFET is expressed in

a)

$F$

b)

$\frac{F}{m}$

c)

$Fm$

d)

$\frac{F}{m^2}$

8.

$\mu_nC_{ox}$ is expressed in

a)

$\frac{A}{V^2}$

b)

$\frac{A}{V}$

c)

$\frac{V}{A}$

d)

$\frac{V}{A^2}$

9.

Given that $V_t$ = 1V, $\mu_nC_{ox}\ \frac{W}{L}\ =\ 100\ \mu$ . The drain current of MOSFET in saturation if $V_{GS}$ = 2 V is _____

a)

$50\ \mu A$

b)

$100\mu A$

c)

$0$

d)

$150\ \mu A$

10.

For an N MOSFET if $V_{GD}\ <\ V_t$ , it will be in

a)

saturation

b)

linear

c)

cutoff

d)

active

11.

The incremental output resistance of an ideal MOSFET is

a)

0

b)

infinite

c)

cannot be determined

d)

low

12.

In an ideal MOSFET current remains constant in saturation region

a)

True

b)

False

13.

If saturation current of a MOSFET is $100\ \mu A$ and $\lambda\ =\ 0.1\$ , the incremental output resistance will be

a)

100 K

b)

1M

c)

10M

d)

10K

14.

In saturation region MOSFET acts as a

a)

Constant current source

b)

Votage variable resistor

c)

Linear resistor

d)

All

15.

Inversion layer formed in a MOSFET can act as a conducting channel

a)

True

b)

False

AMC GAME 1

Total questions: 15

Worksheet time: 8mins

Similar Resources on Wayground