WorksheetsEC8353 Electron Devices and Circuits (IAT-1)
Total questions: 25
Worksheet time: 59mins
Single-element semiconductors are characterized by atoms with ____ valence electrons.
3
4
5
2
For a forward-biased diode, as temperature is ________, the forward current ________ for a given value of forward voltage.
decreased, increases
increased, increases
increased, decreases
decreased, decreases
Reverse saturation current in a Silicon PN junction diode nearly doubles for every_______________
20 degree rise in temp.
50 degree rise in temp.
60 degree rise in temp.
10 degree rise in temp.
The output frequency of a full-wave rectifier is ________ the input frequency.
one-half
equal to
Twice
one-quarter
In the diode equation, the voltage equivalent of temperature is _________
11600/T
T/11600
T x 11600
11600/T2
Zener diode, when used in voltage stabilization circuit is biased in______________
Reverse bias region below the breakdown region.
Reverse breakdown region.
Forward biased region.
Forward biased constant current mode.
Statement (S) : A PN junction has high resistance in reverse direction.
Reason (R) : When a reverse bias is applied to PN junction, the width of the depletion layer increases.
Both S and R are true and R is the correct explanation for S
Both S and R are true but R is not the correct explanation for S
S is true but R is false
S is false but R is true
An ideal diode presents ________ circuit when reverse biased and ________ circuit when forward-biased.
open, short
short, open
open, open
short, short
GaAs LED emits radiation in__________
Ultraviolet region
Violet, blue, green, range of visible region
Visible region
Infrared region
Zener diodes with breakdown voltages less than 5 V operate predominantly in what type of breakdown?
Avalanche
Zener
Varactor
Schottky
In LED, light is emitted because _____________
Recombination of charge carriers take place
Diode gets heated up
Light falling on gets amplified
Light gets reflected due to lens action
What unit is used to represent the level of a diode forward current IF?
pA
nA
μA
mA
What factor(s) do(es) the barrier potential of a pn junction depend on?
type of semiconductive material
the amount of doping
the temperature
all of the above
The pentavalent impurities like antimony, arsenic, bismuth and phosphorus, added to intrinsic semiconductors are called
Acceptor or P-type impurities
Donor or P-type impurities
Acceptor or N-type impurities
Donor or N-type impurities
The breakdown voltage of the P-N junction diode decreases due to the increase in ______________
Reverse saturation current
Reverse leakage current
Bias voltage
Barrier voltage
In a transistor if β = 100 and collector current is 10 mA, then IE is …………
100 mA
100.1 mA
110 mA
none of the above
When transistors are used in digital circuits, they usually operate in the:
Active region
Saturation region
Cutoff region
Saturation and Cutoff regions
If a 2 mV signal produces a 2 V output, what is the voltage gain?
0.001
0.004
100
1000
In the active region, while the collector-base junction is ________-biased, the base-emitter is ________-biased.
forward, forward
forward, reverse
reverse, forward
reverse, reverse
The biasing circuit that gives best stability to Q point is _________
base resistance biasing
feedback resistor biasing
potential divider biasing
emitter resistor biasing
If VCC = +18 V, voltage-divider resistor R1 is 4.7 k ohm, and R2 is 1500 ohm, what is the base bias voltage?
8.70 V
4.35 V
2.90 V
0.7 V
An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is _____________
0 to 200 Ω
200 - 400 Ω
200 Ω and above
400 Ω and above
If α of a transistor is 0.98 then β is equal to ______
51
49
47
45
If the drift current is 100 mA and diffusion current is 1 A what is the total current in the semiconductor diode?
1.01 A
1.1 A
900 mA
101 mA
DC power output of bridge full wave rectifier is equal to _________
(Im is the peak current and RL is the load resistance).
2 Im2RL
4 Im2RL
Im2RL
Im2 RL/2
