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WorksheetsHall effect and PN junction diode
Total questions: 20
Worksheet time: 10mins
In the Hall Effect, the directions of electric field and magnetic field are parallel to each other.
The above statement is
a) True
b) False
The Hall coefficient RH
ne
1/ne
e/n
n/e
If the Hall coefficient is negative it is a------ type of semiconductor
P-type
N-type
Intrinsic
Extrinsic
The majority charge carriers in p-type semiconductors are
holes
electrons
both electrons and holes
none f the above
The energy gap in silicon is
0.3 eV
0.7 eV
1.1 eV
0.5eV
The region which is depleted of mobile charge carriers is called
a) Depletion region
b)Potential Barrier
Both a and b
None f the above
The width of depletion region is
1 μ m
2 μ m
3 μ m
4 μ m
In unbiased condition the total current due to drift and diffusion is
increases
decreases
zero
All the above
In forward biased condition the width of potential barrier
increases
decreases
zero
All the above
In reverse bias the reverse saturation current is due to
minority charge carriers
majority charge carriers
electrons
holes
Zener breakdown occurs at
> 6V
< 6V
6V
0
The threshold voltage of Germanium is
0.7 V
0.3 V
1.1 V
0.8 V
1. Zener diodes are also known as
Voltage regulators
Forward bias diode
Breakdown diode
None of the mentioned
Zener Diode is mostly used as ____________
Half-wave rectifier
Full-wave rectifier
Voltage Regulator
LED
BJT is a _______ terminal device
2
3
1
4
In NPN transistor the majority charge carriers in base are
Electrons
Holes
Neither
Both
The region which is lightly doped and thin is called
Emitter
Base
Collector
None
BJT is a
Voltage controlled device
Current controlled device
both
none
The region which has large area and moderately doped is called
base
emitter
collector
Anode
The emitter junction is
Forward biased
Reverse Biased
Nonconducting
Breakdown region
