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WorksheetsAPPLIED PHYSICS (UNIT-1 & UNIT-2)
Total questions: 30
Worksheet time: 15mins
1. Matter waves are first experimentally verified by
De-broglie
Schrodinger
Davisson & Germer
2. The wavelength associated with an electron accelerated by a potential 1600 V is
1.2 A0
12.26 A0
3.06 A0
0.306 A0
3. The Minimum amount of energy required for photoelectric emission to start is called
Threshold frequency
Work Function
Photoelectric effect
4. If the momentum of a particle is doubled, then the debroglie wavelength will be
Half of original wavelength
Double the original wavelength
Four times the original wavelength
No change in wavelength
5. Davisson and Germer experiment relates to
Interference
Diffraction
Polarization
6. The wavelength of matter wave is independent of
Mass
Velocity
Momenum
Charge
Energy possessed by a particle in the first exicted state is
h2/8mL2
h2/4mL2
4h2/8mL
h2/4mL2
8. Dual nature of matter wave is predicted by
Phenomenon of Photoelectric effect
Concept of Schrodinger Wave function
Electron Diffraction
9. Velocity of light waves is -------------- velocity of matter waves
Smaller than
Greater than
Equal to
10. At T=0K Fermi level in intrinsic semiconductor is
EF = (Ec + Ev )/2
EF = (Ea + Ev )/2
EF = (Ea + Ed )/2
EF = (Ec + Ed )/2
11. The frequency of scattered photon is ------------------- incident photon in Compton effect
Greater than
Smaller than
Equal
12. Energy is radiated or absorbed in discrete packets is given by
Product of plancks constant and Frequency
Product of Frequency and velocity
Product of Frequency and wavelength
13. Rest mass of an electron is m =
1−c vm0
1−cvm
m = 1− c2v2m0
1−cv2m0
PNP transistor is represented by
15. The pentavalent impurity atom is also called as
Impure aom
Acceptor
Donor
16. Conductivity in intrinsic semiconductor is due to
Electrons
Holes
Both Electrons & Holes
Neuther lectrons nor holes
17. In a transistor the emitter current
Sum of Base and Collector
Equal to carriers in base
Depends on collector
18. Fermi level in P-type semiconductor at T=0 K is
2Ea + Ev
2Ec + Ed
2Ea
2Ed
19. The fermi energy level in intrinsic semiconductor lies in
In the conduction band
In the valence band
Below the valence band
Middle of forbidden energy gap
In N-type semiconductor has electrons which are set free for movement in the material by the
acceptor atoms
Donor atoms
Holes and Electrons
21. Forbidden energy gap for Ge is
0.6 eV
1.1 eV
0.06 eV
Forbidden energy gap for silicon is
0.05 eV
0.5 eV
0.03 eV
1.1 eV
23. Fermi level represents the energy level with probability of its occupation at -------------- any time
25%
50%
60%
75%
24. In a transistor emitter is always forward biased with respect to base so that it can emit ---------------------- to base
majority charge carriers
minority charge carriers
Equal number of charge carriers
Restrict the flow of charge carriers
25. In PN junction the motion of majority charge carriers is due to the process of
Drift
Diffussion
26. In reverse bias resistance of the diode
Decreases
Increases
May increase or decrease
No effect
If hall coefficint of a material is positive then material is
Insulator
N-type Semiconductor
P-type semiconductor
Metal
28. On increasing current in a PN junction, the potential barrier will
Remains same
Becomes zero
Decreases
Increases
29. Time independent schrodinger wave equation is
30. A PN junction acts as
Unidirectional switch
Bidirectional switch
Controlled Switch
