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BEEME_UNIT 4_PRACTICE QUIZ

Total questions: 50

Worksheet time: 25mins

Name
Class
Date
1.

A JFET has three terminals, namely

a)

cathode,anode,grid

b)

emitter, base, collector

c)

source, gate, drain

d)

none of the above

2.

A JFET is also called …………… transistor

a)

bipolar

b)

unipolar

c)

unijunction

d)

none of the above

3.

A JFET is a ………… driven device

a)

voltage

b)

current

c)

both current and voltage

d)

none of the above

4.

The gate of a JFET is ………… biased

a)

forward

b)

reverse

c)

reverse as well as forward

d)

none of the above

5.

In a p-channel JFET, the charge carriers are …………..

a)

electrons

b)

holes

c)

both electrons and holes

d)

none of the above

6.

The input control parameter of a JFET is ……………

a)

gate current

b)

drain voltage

c)

gate voltage

d)

source voltage

7.

The channel of a JFET is between the …………….

a)

input and output

b)

gate and source

c)

drain and source

d)

gate and drain

8.

The electrons flow through a p-channel JFET from ……….. to …………..

a)

from drain to source

b)

from drain to gate

c)

from source to gate

d)

from source to drain

9.

FET is a voltage controlled device.

a)

True

b)

False

10.

Which of the following statement is true about FET?

a)

It has high output impedance

b)

It has high input impedance

c)

It has low input impedance

d)

It does not offer any resistance

11.

Comparing the size of BJT and FET, choose the correct statement?

a)

BJT is larger than the FET

b)

BJT is smaller than the FET

c)

Both are of same size

d)

Depends on application

12.

What is the main advantage of FET which makes it more useful in industrial applications?

a)

Voltage controlled operation

b)

Less cost

c)

Small size

d)

Semiconductor device

13.

For an n-channel FET, What is the direction of current flow?

a)

Source to drain

b)

Drain to source

c)

Gate to source

d)

Gate to drain

14.

For a p-channel FET, What is the direction of current flow?

a)

Source to drain

b)

Drain to source

c)

Gate to source

d)

Gate to drain

15.

FET is a three-terminal device which uses ________ to control the flow of current through the device

a)

electric field

b)

magnetic field

c)

hole

d)

electron

16.

FET stands for

a)

Field effect transistor

b)

Field emitter transistor

c)

Filled effect transistor

d)

Field environment transistor

17.

This symbol is for

a)

MOSFET-D type

b)

JFET-n channel

c)

JFET-p channel

d)

MOSFET-E type

18.

Which of the following is not a terminal of an FET device?

a)

Base

b)

Gate

c)

Drain

d)

Source

19.

The oxide layer formed in the MOSFET is

a)

Metal oxide

b)

Silicon dioxide

c)

Poly Silicon oxide

d)

Oxides of Non metals

20.

The drain current (n-MOSFET) is varied by

a)

Gate to source voltage

b)

Gate current

c)

Source Voltage

d)

None of the mentioned

21.

Which of the following terminals does not belong to the MOSFET?

a)

Drain

b)

Gate

c)

Base

d)

Source

22.

Choose the correct statement

a)

MOSFET is a unipolar, voltage controlled, two terminal device

b)

MOSFET is a bipolar, current controlled, three terminal device

c)

MOSFET is a unipolar, voltage controlled, three terminal device

d)

MOSFET is a bipolar, current controlled, two terminal device

23.

The output characteristics of a MOSFET, is a plot of

a)

Id as a function of Vgs with Vds as a parameter

b)

Id as a function of Vds with Vgs as a parameter

c)

Ig as a function of Vgs with Vds as a parameter

d)

Ig as a function of Vds with Vgs as a parameter

24.

1. The MOSFET stands for.....

a)

Metal oxidized selenium FET

b)

Metal oxide surface FET

c)

Metal oxide semiconductor FET

d)

Metal of surface FET

25.

MOSFET is also known as….

a)

IGBJT

b)

IGFET

c)

IGBET

d)

None

26.

Enhancement mode MOSFETs are more commonly used as

a)

switches

b)

resistors

c)

buffers

d)

capacitors

27.

Depletion mode MOSFETs are more commonly used as

a)

switches

b)

resistors

c)

buffers

d)

capacitors

28.

What is NOT the name of a pin on a MOSFET?

a)

Source

b)

Drain

c)

Gate

d)

Power

29.

This MOSFET is a

a)

pnp

b)

N-Type

c)

P-Type

d)

npn

30.

………… is the best electronic device for fast switching.

a)

MOSFET

b)

JFET

c)

BJT

d)

Triode

31.

For an n-channel enhancement mode MOSFET, the drain current :

a)

Decreases with increases in drain voltage

b)

Decreases with decrease in drain voltage

c)

Increases with increases in gate voltage

d)

Increases with decrease in gate voltage

32.

The main factor which differentiates a DEMOSFET from an E-only MOSFET is the absence of :

a)

P-N junctions

b)

Insulated gate

c)

Electrons

d)

Channel

33.

Number of Terminals in a MOSFET are :

a)

Two

b)

Three

c)

Four

d)

Five

34.

The controlling parameter in MOSFET is

a)

Vds

b)

Ig

c)

Vgs

d)

Is

35.

Which component is considered to be an “OFF” device?

a)

Transistor

b)

JFET

c)

D-MOSFET

d)

E-MOSFET

36.

The main types of field effect transistor are

a)

BJT and FET

b)

UJT and FET

c)

JFET and MOSFET

d)

None of the above

37.

2.Choose the correct statement

a)

IGBTs have higher switching losses as compared to BJTs

b)

IGBTs have secondary breakdown problems

c)

IGBTs have lower gate drive requirements

d)

IGBTs are current controlled devices

38.

4. The body of an IGBT consists of a

a)

p-layer

b)

n-layer

c)

p-n layer

d)

metal

39.

5. IGBT possess

a)

low input impedance

b)

high input impedance

c)

high on-state resistance

d)

second breakdown problems

40.

6. IGBT & BJT both posses ___

a)

low on-state power losses

b)

high on-state power losses

c)

low switching losses

d)

high input impedance

41.

7. The three terminals of the IGBT are

a)

base, emitter & collector

b)

gate, source & drain

c)

gate, emitter & collector

d)

base, source & drain

42.

8. The controlling parameter in IGBT is the

a)

IG

b)

VGE

c)

IC

d)

VCE

43.

14. The depletion N-channel MOSFET

a)

Can be operated as a JFET with zero gate voltage

b)

Can be operated as an enhancement MOSFET by applying +ve bias to gate

c)

Can be operated as an enhancement MOSFET by applying -ve bias to gate

d)

Cannot be operated as an enhancement MOSFET

44.

15 . The enhancement N-channel MOSFET

a)

Cannot be operated as an enhancement MOSFET

b)

Can be operated as a JFET with zero gate voltage

c)

Can be operated as an enhancement MOSFET by applying -ve bias to gate

d)

Can be operated as an enhancement MOSFET by applying +ve bias to gate

45.

IGBT is the second most widely used device after?

a)

SCR

b)

Diode

c)

BJT

d)

MOSFET

46.

IGBT is a combination of Bipolar Junction Transistor (BJT) and

a)

SCR

b)

UJT

c)

FET

d)

MOSFET

47.

IGBT full form?

a)

Insulated Gate Bipolar Transistor

b)

Isolated Gate Bipolar Transistor

c)

Intrensic Gate Bipolar Transistor

d)

Isolated Gate Bivalent Transistor

48.

1. The JFET is

a)

(a) a unipolar device

b)

(b) a voltage-controlled device

c)

(c) a current-controlled device

d)

(d) answers (a) and (c)

e)

(e) answers (a) and (b)

49.

Which is NOT a characteristic of JFET?

a)

High input impedance

b)

Negative temperature coefficient

c)

Unipolar device

d)

Thermal runaway occurs

50.

The terminal through which electrons leave the semiconductor bar is called.....

a)

Drain

b)

Source

c)

Gate

d)

None of the above

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