Free Printable Self-Assessment Quiz-2

1.

The electric field in a device can also be expressed as ........... ( $\Phi$ =potential, E = energy)

a)

$\xi=\frac{\partial\Phi}{\partial x}$

b)

$\xi=\frac{1}{q}\frac{\partial E_i}{\partial x}$

c)

$\xi=\frac{\partial E_c}{\partial x}$

d)

$\xi=-qE$

2.

A very highly doped semiconductor is called a ___________ semiconductor.

a)

degenerate

b)

degenerative

c)

degeneration

d)

degree

3.

The expression for depletion width in a p-n junction can be transformed from thermal equilibrium to bias ( $V_a$ ) conditions by replacing $\Phi$ with

a)

$V_a$

b)

no change

c)

$V_a-\Phi$

d)

$\Phi-V_a$

4.

The doping concentration in a p-n junction is quadratic in nature. What will be the trend of its potential?

a)

linear

b)

cubic

c)

to the power 4

d)

to the power 5

5.

The plot of $\frac{1}{C_{dep}^2}$ versus $V_R$ (reverse bias) intersects the $\left|V_R\right|$ -axis at

a)

$V_a$

b)

$\Phi_{bi}$

c)

$-\Phi_{bi}$

d)

$-V_a$

6.

Can a device have two quasi-Fermi levels?

a)

Yes

b)

No

7.

The doping concentration on n-side of a p-n junction is $10^{19}\ cm^{-3}$ , and the doping concentration on its p-side is $10^{17}\ cm^{-3}$ . The total depletion width can be expressed as

a)

1001 $x_n$

b)

101 $x_n$

c)

101 $x_p$

d)

1001 $x_p$

8.

The electron affinity of Silicon is equal to

a)

4.0 eV

b)

4.05 eV

c)

3.75 eV

d)

4.25 eV

9.

The electron affinity of $SiO_2$ is equal to

a)

1.10 eV

b)

0.95 eV

c)

8 eV

d)

4.0 eV

10.

When do we need the quasi-Fermi levels?

a)

When one Fermi level is sufficient to consider the carrier distribution

b)

When Silicon is exposed to photons

c)

When the carrier distribution for electrons and holes is significantly high

d)

None of the above

11.

In a MOS capacitor, where the p-type semiconductor workfunction is higher than the metal workfunction, what will be the status of the semiconductor once MOS structure is formed?

a)

accumulation of majority carriers

b)

depletion of minority carriers

c)

depletion of majority carriers

d)

accumulation of minority carriers

12.

In a forward biased p-n junction, when $V_a>\Phi_{bi}$ , the total depletion width is imaginary. How does the p-n junction handle this mathematics ?

a)

The voltage drop takes place across the neutral regions.

b)

The expression does not hold true for the cited case.

c)

The voltage drop occurs in the voltage source.

d)

Insufficient information.

Self-Assessment Quiz-2

Total questions: 12

Worksheet time: 22mins

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