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WorksheetsSEMICONDUCTOR PHYSICS
Total questions: 20
Worksheet time: 15mins
As the temperature increases conductivity increases, this is meant for
positive temperature coefficient of resistance
negative temperature coefficient of resistance
neutral temperature coefficient of resistance
None of the mentioned
Above OK the semiconductor behaves as
Insulator
Conductor
Superconductor
Semiconductor
The phenomenon of adding impurity atoms to the host atom is
Catalysing
Enhancing
Doping
None of the above
Find the odd one out
Extrinsic semiconductor
n type semiconductor
p type semiconductor
intrinsic semiconductor
The majority charge carrier in n-type semiconductor is
electron
holes
electron and holes
none of the mentioned
The carrier concentration of holes in valence band can be calculated within the energy interval
Ev and -infinity
Ec and infinity
Ec and -infinity
None of the mentioned
Assertion (A): The intrinsic semiconductor is a pure form of semiconductor
Reason (R): They occur naturally on earth
Both A and R are true and R is the correct explanation of A.
B. Both A and R are true, but R is not the correct explanation of A.
A is true, but R is false.
A is false, but R is true.
The highest energy level in conduction band and lowest energy in vaence band is represented as
Ef
Ev
E
Ec
The type of impurity atom added to pure form of semicoductor to get n-type semiconductor is
pentavalent impurity
Divalent impurity
tetravalent impurity
trivalent impurity
The majority charge carrier in intrinsic semiconductor is
electron
holes
electron and holes
no charge carrier
The new energy level introduced in the n type semiconductor due to the dopant is
acceptor energy level
donor energy level
fermi energy level
conduction band energy level
Assertion (A): The majority charge carriers in n type semiconductors are electrons
Reason (R): This is due to the addition of pentavalent impurity in it
Both A and R are true and R is the correct explanation of A.
Both A and R are true, but R is not the correct explanation of A.
A is true, but R is false.
A is false, but R is true.
The variation of fermi energy in n type and ptype is due to
temperature
doping
temperature and doping concentration
none of the above
The fermi energy for n type semiconductor is situated in between _____ and ______
donor and conduction energy level
valence and acceptor energy level
conduction and acceptor energy level
all the above
Tungsten is used in bulbs since it is a semiconduting material (True/False)
True
False
The majority charge carrier in p type semiconductor is
electron
holes
electron and holes
all the mentioned
Which of the following statements is not true
The resistance of intrinsic semiconductors decrease with increase of temperature
Doping pure Si with trivalent impuritiesgive p-type semiconductors
The majority carriers in n--type semiconductors are holes
A PN junction can act as a semiconductor diode
When will the conductivity of Ge decreases?
adding acceptors
adding donors
decreasing the temperature
light radiation
If the lattice constant of the semiconductor decreases,which of the following is correct?
All Ec,Ev,Eg increases
Ec,Ev increases but Eg decreases
Ec,Ev decreases but Eg increases
All Ec,Ev,Eg decreases
Smallest particle of elements that retains characteristics of that element is-----
molecules
cells
atoms
diodes
