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Semiconductor-Diodes-Voltage-Dividers

Total questions: 136

Worksheet time: 4hrs 40mins

Name
Class
Date
1.


Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

a)

A.1

b)

B.2

c)

C.4

d)

D.6

2.

One eV is equal to ________ J.


a)

A. 6.02 × 10^23

b)

B. 1.6 × 10^-19

c)

C. 6.25 × 10^18

d)

D. 1.66 × 10^-24

3.

The diode ________.


a)

A. is the simplest of semiconductor devices


b)

B. has characteristics that closely match those of a simple switch


c)

C. is a two-terminal device


d)

D. All of the above


4.

 It is not uncommon for a germanium diode with an Is in the order of 1-2 uA at 25°C to have leakage current of 0.1 mA at a temperature of 100°C.


a)

A. True

b)

B. False

5.

What does a high resistance reading in both forward- and reverse-bias directions indicate?


a)

A. A good diode

b)

B. An open diode

c)

C. A shorted diode

d)

D. A defective ohmmeter

6.

 Which capacitance dominates in the reverse-bias region?


a)

A. depletion

b)

B. conversion

c)

C. Diffusion

d)

D. None of the above

7.

Which capacitance dominates in the forward-bias region?


a)

A. depletion

b)

B. conversion

c)

C. Diffusion

d)

D. None of the above

8.

What is the state of an ideal diode in the region of nonconduction?


a)

A. An open circuit

b)

B. A short circuit

c)

C. Unpredictable

d)

D. Undefined

9.

How many orbiting electrons does the germanium atom have?

a)

A. 4

b)

B. 14

c)

C. 32

d)

D. 41

10.

How many terminals does a diode have?


a)

A. 1

b)

B. 2

c)

C. 3

d)

D. 4

11.

What unit is used to represent the level of a diode forward current IF?


a)

A. pA

b)

B. nA

c)

C. uA

d)

D. mA

12.

The diffused impurities with ________ valence electrons are called donor atoms.


a)

A. 4

b)

B. 3

c)

C. 5

d)

D. 0

13.

 In which of the following color(s) is (are) LEDs presently available?

a)

A. Yellow

b)

B. White

c)

C. Orange

d)

D. All of the above

14.

Determining rd to a high degree of accuracy from a characteristic curve is very accurate.


a)

A. True

b)

B. False

15.

What is the range of the operating voltage level for LEDs?


a)

A. 5-12 mV

b)

B. 1.7-3.3 V

c)

C. 5-12 V

d)

D. 20-25 V

16.

 At what kind of operating frequency diffusion or transition is a capacitor represented in parallel with the ideal diode?

a)

A. Low frequency

b)

B. Moderate frequency

c)

C. Mid frequency

d)

D. Very high frequency

17.

Which of the following devices can check the condition of a semiconductor diode?


a)

A. Digital display meter (DDM)

b)

B. Multimeter

c)

C. Curve tracer

d)

D. All of the above

18.


Ionization within a P-N junction causes a layer on each side of the barrier called the:

a)

A. junction

b)

B. depletion region

c)

C. barrier voltage

d)

D. forward voltage

19.

What is the most significant development in electronics since World War II?

a)

A. the development of color TV

b)

B. the development of the diode

c)

C. the development of the transistor

d)

D. the development of the TRIAC

20.


What causes the depletion region?

a)

A. doping

b)

B. diffusion

c)

C. barrier potential

d)

D. ions

21.

What is an energy gap?

a)

A. the space between two orbital shells

b)

B. the energy equal to the energy acquired by an electron passing a 1 V electric field

c)

C. the energy band in which electrons can move freely

d)

D. an energy level at which an electron can exist

22.

Silicon atoms combine into an orderly pattern called a:

a)

A. covalent bond

b)

B. crystal

c)

C. semiconductor

d)

D. valence orbit

23.

In "n" type material, majority carriers would be:

a)

A. holes

b)

B. dopants

c)

C. slower

d)

D. electrons

24.

Elements with 1, 2, or 3 valence electrons usually make excellent:

a)

A. conductors

b)

B. semiconductors

c)

C. insulators

d)

D. neutral

25.

A commonly used pentavalent material is:

a)

A. arsenic

b)

B. boron

c)

C. gallium

d)

D. neon

26.

Which material may also be considered a semiconductor element?

a)

A. carbon

b)

B. ceramic

c)

C. mica

d)

D. argon

27.

In "p" type material, minority carriers would be:

a)

A. holes

b)

B. dopants

c)

C. slower

d)

D. electrons

28.


What can a semiconductor sense?

a)

A. magnetism

b)

B. temperature

c)

C. pressure

d)

D. all of the above

29.

When an electron jumps from the valence shell to the conduction band, it leaves a gap. What is this gap called?

a)

A. energy gap

b)

B. hole

c)

C. electron-hole pair

d)

D. recombination

30.


Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?

a)

A. 0.2

b)

B. 0.3

c)

C. 0.7

d)

D. 0.8

31.

Which semiconductor material is made from coal ash?

a)

A. germanium

b)

B. silicon

c)

C. tin

d)

D. carbon

32.


When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:

a)

A. 1949, William Schockley

b)

B. 1955, Walter Bratten

c)

C. 1959, Robert Noyce

d)

D. 1960, John Bardeen

33.

When is a P-N junction formed?

a)

A. in a depletion region

b)

B. in a large reverse biased region

c)

C. the point at which two opposite doped materials come together

d)

D. whenever there is a forward voltage drop

34.

A P-N junction mimics a closed switch when it:

a)

A. has a low junction resistance

b)

B. is reverse biased

c)

C. cannot overcome its barrier voltage

d)

D. has a wide depletion region

35.

Solid state devices were first manufactured during:

a)

A. World War 2

b)

B. 1904

c)

C. 1907

d)

D. 1960

36.


Electron pair bonding occurs when atoms:

a)

A. lack electrons

b)

B. share holes

c)

C. lack holes

d)

D. share electrons

37.

How many valence electrons are in every semiconductor material?

a)

A. 1

b)

B. 2

c)

C. 3

d)

D. 4

38.

What is a type of doping material?

a)

A. extrinsic semiconductor material

b)

B. pentavalent material

c)

C. n-type semiconductor

d)

D. majority carriers

39.


Minority carriers are many times activated by:

a)

A. heat

b)

B. pressure

c)

C. dopants

d)

D. forward bias

40.


What is the voltage across R1 if the P-N junction is made of silicon?

a)

A. 12 V

b)

B. 11.7 V

c)

C. 11.3 V

d)

D. 0 V

41.

If conductance increases as temperature increases, this is known as a:

a)

A. positive temperature coefficient

b)

B. negative current flow

c)

C. negative temperature coefficient

d)

D. positive resistance

42.

Which of the following cannot actually move?

a)

A. majority carriers

b)

B. ions

c)

C. holes

d)

D. free electrons

43.

What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?

a)

A. conductivity

b)

B. resistance

c)

C. power

d)

D. all of the above

44.

The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V.

a)

A. True

b)

B. False

45.


When a depletion region of a transistor is large the barrier voltage is also large.

a)

A. True

b)

B. False

46.


The first integrated circuit was invented in 1959.

a)

A. True

b)

B. False

47.

A covalent bond is when atoms lose valence shell electrons.

a)

A. True

b)

B. False

48.


When a voltage is placed across a semiconductor, free electrons move toward the negative voltage.

a)

A. True

b)

B. False

49.

The first transistor was invented in 1938.

a)

A. True

b)

B. False

50.


Germanium is the most widely used semiconductor material because of its stability at high temperatures.

a)

A. True

b)

B. False

51.

The natural elements carbon, germanium, and silicon are semiconductors.

a)

A. True

b)

B. False

52.

The P-N junction is a barrier to electron flow.

a)

A. True

b)

B. False

53.

The number of electrons in the outer shell of carbon, germanium, and silicon is 5.

a)

A. True

b)

B. False

54.

The n-type semiconductor material is doped by adding material with electron holes.

a)

A. True

b)

B. False

55.

Reverse bias is a condition that essentially ___________ current through the diode.

a)

A. allows

b)

B. prevents

c)

C. increases

d)

D. blocks

56.


Atoms that normally have three electrons in their outer shell are called __________________ atoms.

a)

A. trivalent

b)

B. pentavalent

c)

C. tetravalent

d)

D. charged

57.

Assume the valence electron is removed from a copper atom. The net charge of the atom becomes:

a)

A. 0

b)

B. +1

c)

C. -1

d)

D. +4

58.

At absolute 0 temperature, an intrinsic semiconductor has:

a)

A. a few electrons

b)

B. many holes

c)

C. many electrons

d)

D. no holes or free electrons

59.

As the forward current through a silicon diode increases, the voltage across the diode:

a)

A. increases to a 0.7 V maximum

b)

B. decreases

c)

C. is relatively constant

d)

D. decreases and then increases

60.

When a pure semiconductor is heated, its resistance.

a)

A. decreases

b)

B. increases

c)

C. remains the same

d)

D. can’t say

61.

A semiconductor has _____ temperature coefficient of resistance.

a)

A. Positive

b)

B. Zero

c)

C. Negative

d)

D. None of the above

62.

The most commonly used semiconductor is

a)

A. Germanium

b)

B. Silicon

c)

C. Carbon

d)

D. Copper

63.

When a pentavalent impurity is added to a pure semiconductor, it becomes 

a)

A. an insulator

b)

B. an intrinsic semiconductor

c)

C. p-type semiconductor

d)

D. n-type semiconductor

64.

Addition of pentavalent impurity to a semiconductor creates many 

a)

A. free electrons

b)

B. holes

c)

C. valence electrons

d)

D. bound electrons

65.

An n-type semiconductor is 

a)

A. positively charged

b)

B. negatively charged

c)

C. electrically neutral

d)

D. none of the above

66.

When a trivalent impurity is added to a pure semiconductor it becomes 

a)

A. an insulator

b)

B. an intrinsic semiconductor

c)

C. p-type semiconductor

d)

D. n-type semiconductor

67.

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor.

a)

A. remains the same

b)

B. increases

c)

C. decreases

d)

D. none of the above

68.

In the depletion region of a pn junction, there is shortage of 

a)

A. acceptor ions

b)

B. holes and electrons

c)

C. donor ions

d)

D. none of the above

69.

In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a  

a)

A. peak

b)

B. barrier

c)

C. threshold

d)

D. path

70.

In a PN junction the potential barrier is due to the charges on either side of the junction, these charges are  

a)

A. majority carriers

b)

B. minority carriers

c)

C. both a and b

d)

D. fixed donor and acceptor ions

71.

The capacitance of a reverse biased pn junction  

a)

A. increases as reverse bias is increased

b)

B. decreases as reverse bias is decreased

c)

C. increases as reverse bias is decreased

d)

D. is significantly low

72.

For a PN junction, the current in reverse bias may be  

a)

A. few milliamperes

b)

B. between 0.2A and 15A

c)

C. few amperes

d)

D. few micro or nano amperes

73.

When a PN junction is reverse-biased

a)

A. Majority carriers tend to concentrate towards the junction

b)

B. the barrier tends to break down

c)

C. majority carriers tend to move away from the junction

d)

D. none of the above

74.

During reverse bias, a small current develops known as a 

a)

A. forward current 

b)

B. passive current

c)

C. reverse saturation current

d)

D. active current

75.

Determine the bulk resistance of a diode for a forward voltage of 0.93 V at 1 ampere. (Assume Si diode is used)

a)

A. 0.23 ohm

b)

B. 0.53 ohm

c)

C. 0.73 ohm

d)

D. 0.93 ohm

76.

Solve for P_Z in the circuit shown.

a)

a. 6.35mW

b)

b. 2.2mW

c)

c. 8.1mW

d)

d. 0W

77.

Solve for P_Z in the circuit shown if R_L=3 kΩ.

a)

a. 26.7mW

b)

b. 18.2mW

c)

c. 12.5mW

d)

d. 0W

78.

Which of the following are true?
1) point contact diode has a metal whisker to make pressure contact during its operation
2) it has high voltage rating
3) its V-I characteristics are constant
4) it has low breakdown voltage

a)

A. 1 and 2

b)

B. 3 only

c)

C. 1 and 4

d)

D. 2 only

79.

Schottky diodes are also known as

a)

A) minority carrier diode

b)

B) hot carrier diode

c)

C) majority carrier diode

d)

D) electrode carrier diode

80.

Diode used primarily in high frequency devices and fast switching applications is called

a)

A) current regulator diode

b)

B) Schottky diode

c)

C) PIN diode

d)

D) Zener diode

81.

The capacitance of varactor varies

a)

A) inversely with reverse voltage

b)

B) very slightly independent with reverse voltage

c)

C) independent of reverse voltage

d)

D) directly with reverse voltage

82.

Varactor diodes are used in FM receivers to obtain

a)

A) automatic frequency control

b)

B) automatic noise control

c)

C) automatic volume control

d)

D) automatic gain control

83.

The tunneling involves

a)

A) acceleration of electrons in p side

b)

B) movement of electrons from n side conduction band to p side valence band

c)

C) charge distribution management in both bands

d)

D) positive slope characteristics of diode

84.

The depletion layer of tunnel diode is very small because

a)

A) its abrupt and has high dopants

b)

B) uses positive conductance property

c)

C) its used for high frequency ranges

d)

D) tunneling effect

85.

Light which has one single wavelength is called

a)

A) coherent

b)

B) incoherent

c)

C) neutral

d)

D) emitter

86.

Laser diode has

a)

A) coherent light

b)

B) incoherent light

c)

C) radio light

d)

D) microwave light

87.

PIN diode consist of

a)

A) 2 operating regions

b)

B) 3 operating regions

c)

C) 4 operating regions

d)

D) 5 operating regions

88.

In fiber optic systems, types of PIN diodes are used as

a)

A) photodetectors

b)

B) photoresistors

c)

C) tuner

d)

D) transmitter

89.

Which of the following materials can be used to produce infrared LED?

a)

A) Si

b)

B) GaAs

c)

C) CdS

d)

D) PbS

90.

Photodiode is used in the detection of

a)

A) visible light

b)

B) invisible light

c)

C) no light

d)

D) both visible and invisible light

91.

In photodiode, when there is no incident light, the reverse current is almost negligible and is called

a)


A) Zener current

b)

B) dark current

c)

C) photo current

d)

D) PIN current

92.

One that clips the positive part of the voltage is known as

a)

A) current regulator

b)

B) clipper

c)

C) multimeter

d)

D) voltage regulator

93.

Which of the following value is varied in a clamper circuit?

a)

a. AC

b)

b. DC

c)

c. Alternative Current

d)

d. Both a and c

94.

Clamper circuits are majorly used in _____ applications?

a)

a. FM transmitters

b)

b. Analog television

c)

c. Removes distortion

d)

d. All the above

95.

Which of the following component in clamper circuit shifts wave?

a)

a. Diode

b)

b. Resistor

c)

c. Capacitor

d)

d. All the above

96.

Identify the circuit displayed below?

a)

a. Series Negative Clipper

b)

b. Series Positive Clipper

c)

c. Series Negative Clamper

d)

d. Series Positive Clamper

97.

Addition of another diode capacitor section to half wave voltage tripler creates a

a)

A) voltage doubler

b)

B) voltage quadrupler

c)

C) voltage generator

d)

D) voltage regulator

98.

What is the average value of the half-wave rectified voltage in the figure?

a)

a. 25.57V

b)

b. 15.92V

c)

c. 43.23V

d)

d. 37.89V

99.

Determine the PIV of the diode in the given figure.

a)

a. 85V

b)

b. 159V

c)

c. 70V

d)

d. 124V

100.

Determine the voltage across R_L when a 100 V peak sine wave is applied to the primary winding in the figure below.

a)

a. 13.5V

b)

b. 45.8V

c)

c. 75.2V

d)

d. 24.3V

101.

Find the average value of the full-wave rectified voltage in figure?

a)

a. 10.93V

b)

b. 12.84V

c)

c. 9.55V

d)

d. 8.78V

102.

Determine the peak output voltage for the bridge rectifier in the given figure. The transformer is specified to have a 12 V rms secondary voltage for the standard 120 V across the primary.

a)

a. 28.12V

b)

b. 15.57V

c)

c. 10.64V

d)

d. 8.78V

103.

Calculate the dc voltage across a 1-kΩ load for an RC filter section (R=120Ω, C=10uF). The dc voltage across the initial filter capacitor is V_DC 60V.

a)

a. 53.6 V

b)

b. 26.34 V

c)

c. 63.86 V

d)

d. 17.32 V

104.

Calculate the output voltage of an LM317 voltage regulator if R_1=240Ω and R_2=2.4kΩ.

a)

a. 14 V

b)

b. 21 V

c)

c. 27 V

d)

d. 30 V

105.

A certain 7805 regulator has a measured no-load output voltage of 5.18 V and a full load output of 5.15 V. What is the load regulation expressed as a percentage?

a)

a. 0.29 %

b)

b. 0.07 %

c)

c. 0.58 %

d)

d. 0.50 %

106.

What is the resistor value of an ideal diode in the region of conduction?

a)

A) 0

b)

B) 5k

c)

C) Undefined

d)

D)Infinity

107.

What is the state of an ideal diode in the region of non conduction?

a)

A) An open circuit

b)

B) A short circuit

c)

C) Unpredictable

d)

D) Undefined

108.

The ideal diode is a(n) ______ circuit in the region of non conduction.

a)

A) Open

b)

B) Short

109.

Which of the following is an atom composed of?

a)

A) Electrons

b)

B) Protons

c)

C) Neutrons

d)

D) All of the above

110.

How many valence electrons does a silicon atom have?

a)

A) 1

b)

B) 2

c)

C) 3

d)

D) 4

111.

How many orbiting electrons does a Germanium atom have?

a)

A) 4

b)

B) 14

c)

C) 32

d)

D) 41

112.

A 12V AC to DC power supply has a transformer with turns ratio of 4:1. What is the peak secondary voltage if 115V peak is applied to the primary winding?

a)

a. 28.75V

b)

b. 32.56V

c)

c. 23.91V

d)

d. 41.53V

113.

What is the peak secondary voltage on a transformer having a secondary to primary turns ratio of 1:14?

a)

a. 15.12V

b)

b. 22.22V

c)

c. 53.17V

d)

d. 86.63V

114.

A 200 KVA-rated transformer has a full-load copper loss of 1.5 KW and an iron loss of 1 KW. Determine the transformer efficiency at full load and 0.85 power factor.

a)

a. 85.9%

b)

b. 79.1%

c)

c. 98.6%

d)

d. 90.2%

115.

A full-wave rectifier with peak rectified voltage of 30V feeds a 100uF filter capacitor connected to a load drawing 50mA. Calculate the ripple factor.

a)

a. 0.01

b)

b. 0.02

c)

c. 0.03

d)

d. 0.04

116.

What is/are the purposes(s) of RL?

a)

A. It limits the amount of current flow in the circuit

b)

B. It develops the output signal

c)

C. Both A and B above

d)

D. It maintains the proper bias on the diode

117.

If the input frequency to a half-wave rectifier is 120 hertz, what is the output frequency of the rectified dc?

a)

A. 30 pps

b)

B. 60 pps

c)

C. 120 pps

d)

D. 240 pps

118.

One of the prime dangers to the semiconductor diode is heat. Excessive current generated by heat  which eventually destroys a diode is called

a)

A. junction overload

b)

B. thermal runaway

c)

C. thermoplastic action

d)

D. thermionic emission

119.

Which of the following elements is the most frequently used for doping pure Ge or Si?

a)

A) Boron

b)

B) Gallium

c)

C) Indium

d)

D) All of the above

120.

The diffused impurities with _______ valence electrons are called donor atoms.

a)

A) 4

b)

B) 3

c)

C) 5

d)

D) 0

121.

In what state is a silicon diode if the voltage drop it is about 0.7V?

a)

A) No bias

b)

B) Forward Bias

c)

C) Reverse bias

d)

D) Zener region

122.

Which of the following is true?

a)

Si diodes have higher PIV and narrower temperature ranges than Ge diodes.

b)

Si diodes have higher PIV and wider temperature ranges than Ge diodes.

c)

Si diodes have lower PIV and narrower temperature ranges than Ge diodes.

d)

Si diodes have lower PIV and wider temperature ranges than Ge diodes.

123.

It is not uncommon for a germanium diode with an Is in the order of 1-2A at 25 degrees Celsius to have a leakage current of 0.1 mA at a temperature of 100 degrees Celsius

a)

a) True

b)

B) False

124.

Calculate the static resistance RD of a diode having ID = 30mA and VD = 0.75V.

a)

A) 25

b)

B) 40

c)

C) 0.04

d)

D) 0.025

125.

Calculate ID if RD = 30 Ohms and VD = 0.84V

a)

A) 28 mA

b)

B) 0.028mA

c)

C) 2.8mA

d)

D) 280A

126.

Refer to the Figure 1.27, Calculate the dynamic resistance RD of a diode having ID = 27.5mA.

a)

A) 0

b)

B) 2

c)

C) 5

d)

D) 26

127.

Determining rd to a high degree of accuracy from a characteristic curve is very accurate.

a)

A) True

b)

B) False

128.

The _______ diode model is employed most frequently in the analysis of electronic systems.

a)

A) ideal device

b)

B) simplified

c)

C) piecewise-linear

d)

D) none of the above

129.

Calculate the power dissipation of a diode having ID =40mA.

a)

A) 28mW

b)

B) 28W

c)

C) 280mW

d)

D) Undefined

130.

What is the value of the transition capacitance for a silicon diode when VD=0?

a)

A) 1pF

b)

B) 3pF

c)

C) 5pF

d)

D) 10pF

131.

Calculate the temperature coefficient in %/ degrees celsius of a 10-V nominal Zener diode at 25 degrees celsius if the nominal voltage is 10.2 V at 100 degrees celsius.

a)

A) 0.0238

b)

B) 0.0251

c)

C) 0.0267

d)

D) 0.0321

132.

What is the maximum power rating for LEDs?

a)

A) 150mW

b)

B) 500mW

c)

C) 1W

d)

D) 10W

133.

In which of the following is the light intensity measured?

a)

A) Candela

b)

B) Efficacy

c)

C) Flux

d)

D) Illumination

134.

The term ______ is often used when comparing the resistance level of materials.

a)

A) permittivity

b)

B) inductivity

c)

C) conductivity

d)

D) resistivity

135.

In the atomic lattice the ____ and ___ form the nucleus.

a)

A) electrons, neutrons

b)

B) electrons, protons

c)

C) neutrons, protons

d)

D) none of the above

136.

An increase in the temperature of a semiconductor can result in a _____ in the number of free electrons in the material.

a)

A) substantial increase

b)

B) substantial decrease

c)

C) slight decrease

d)

D) no change

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