To generate a trigger pulse for firing the thyristor

To regulate voltage in the circuit

To provide resistance in the circuit

To amplify the signal

Heavily doped n-type semiconductor bar with a lightly doped p-type region at one end

Lightly doped n-type semiconductor bar with a heavily doped p-type region at one end

Heavily doped p-type semiconductor bar with a lightly doped n-type region at one end

No doping in the semiconductor bar

Plastic and Glass

Copper and Aluminum

Gold and Silver

Silicon and Germanium

The working principle of UJT is based on the behavior of a PN junction under forward biasing.

The working principle of UJT is based on the behavior of a PNP transistor

The working principle of UJT is based on the behavior of a Zener diode

The working principle of UJT is based on the behavior of a MOSFET

The behavior of UJT remains constant regardless of the biasing conditions

UJT behavior is not affected by any biasing conditions

UJT only operates in one biasing condition

The behavior of UJT varies during different biasing conditions such as forward bias, peak point, and valley point.

Television, radio, computer

Car, bicycle, airplane

Oscillators, pulse generators, sawtooth generators, and voltage or current-controlled switches

Toaster, microwave, refrigerator

UJT provides the triggering pulse to the base terminal of the SCR.

UJT provides the triggering pulse to the gate terminal of the SCR.

UJT provides the triggering pulse to the cathode terminal of the SCR.

UJT provides the triggering pulse to the anode terminal of the SCR.