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WorksheetsSolid state device
Total questions: 75
Worksheet time: 3hrs 30mins
Which of the following is not one of the most frequently used
semiconductors in the construction of electronic devices?
Carbon
Germanium
Silicon
Gallium Arsenide
A positive ion is formed when
a valence electron breaks away from the atom
there are more holes than electrons in the outer orbit
two atoms bond together
an atom gains an extra valence electron
The difference between an insulator and semiconductor is
a wider energy gap between the valence band and the conduction band
the number of free electrons
the atomic structure
all of the above
Electron-hole pairs are produced by
recombination
ionization
thermal energy
doping
Recombination is when
an electron falls into a hole
a positive and negative ion bond together
a valence electron becomes a conduction electron
a crystal is formed
The current in a semiconductor is produced by
electrons only
negative ions
both electrons and holes
holes only
In an intrinsic semiconductor,
there are no free electrons
the free electrons are thermally produced
there are only holes
there are more electrons than holes
The process of adding an impurity to an intrinsic semiconductor is called
doping
atomic modification
recombination
ionization
A trivalent impurity is added to silicon to create
depletion region
a p-type semiconductor
an n-type semiconductor
germanium
The purpose of pentavalent impurity is to
increase the number of free electrons
increase the number of holes
reduce the conductivity of silicon
create minority carriers
The majority carriers in an n-type semiconductor are
holes
valence electrons
protons
conduction electrons
A pn junction is formed by
ionization
the recombination of holes and electrons
the collision of a proton and a neutron
the boundary of a p-type and an n-material
The depletion region is created by
ionization
diffusion
recombination
all of these
In a semiconductor material, what will happen to the number of free electrons when the temperature rises?
decreases
increases
remains the same
decrease exponentially
A diode is operating at a temperature of 20°C. Determine the thermal voltage VT.
24.35 mV
25.25 mV
26.75 mV
25.36 mV
What is the forward diode current if it operates at a temperature of 20°C and the
diode voltage drop is 0.65 with a reverse saturation current of
10nA?
3.65 mA
3.89 mA
3.55 mA
4.12 mA
BJT is constructed with ______ doped semiconductor regions
separated by ____ PN junctions.
two, three
three, three
three, two
two, two
For operation as an amplifier, the base of an NPN transistor must
be _______ with respect to ________.
positive, emitter
positive, collector
negative, ground
negative, emitter
The bias condition for a transistor to be used as a linear amplifier
is called
forward-forward
voltage-divider
forward-reverse
reverse-reverse
A JFET always operates with
the gate-to-source pn junction forward-biased
the gate-to-source pn junction reverse-biased*
the drain connected to ground
the gate connected to the source
A MOSFET differs from a JFET mainly because
MOSFET do not have channel
the JFET has pn junction
of the power rating
MOSFET has 2 gates
An n-channel D-MOSFET with a positive VGS is operating in
depletion mode
cutoff
saturation
enhancement mode
Boron atoms are diffused into a pure silicon material. The net charge of the resulting material is __.
neutral
positive
negative
either positive or negative
When electron carriers from an N-type material goes to the hole in the adjacent P-type material, __.
An electron-hole pair is created, and the electrons are no longer carriers
Carriers are regenerated, resulting to more current flow
There is a movement of carriers giving rise to minority current flow
An electron-hole pair is created, giving rise to hole flow
Charges that only shift positions and does not move in response to electric field
Polarized
Non-polarized
Bounded
Unbounded
Which of the following statements is true?
Dielectrics have a very high energy gap
The valance electrons are free electrons
The mobility of electrons and holes in a semiconductor are equal
The charge densities of free electrons and holes in a semiconductor material are equal.
The excess electrons that do not participate in the covalent bonding during the doping process.
Dopants
Majority Carriers
Holes
Minority Carriers
The current that exist in the reverse-bias condition is ___.
Dark Current
Reverse saturation current
Reverse-bias current
Zero
Which of the following causes the diode not to conduct? Consider VF as the forward voltage and VR as a reverse voltage. (1) |VF| > |VTH| (2)|VF| < |VTH| (3) VF=0 (4) |VR|=|VF|
2 and 3 only
2, 3 and 4 only
1, 2, 3 and 4
1 only
Which of the following is NOT true when a diode is forward biased? (1) Maximum current (2) Maximum voltage (3) Maximum Resistance (4) Maximum power
2 and 3 only
1 and 4 only
1 and 3 only
2 and 4 only
A power supply unit component that converts a sinusoidal wave into a pulsating type.
Rectifier
Transformer
Filter
Regulator
Consider the circuit in figure 1. Calculate the voltage VQ.
10 V
9.3 V
9.7 V
6.2 V
Consider the circuit in figure 1. Which of the following is true about the bias of the diodes?
D1 is FB and D2 is RB
D1 is RB and D2 is FB
Both diodes are FB
Both diodes are RB
Consider the circuit in figure 1. Which of the following statements is true?
The voltage across ab is 0.7V
The current through one of the Si diodes is equal to twice the total current.
The current through the 2kohm load resistor is the total current.
The voltage across ab is 1.4V
Consider the circuit in figure 1. Calculate the current through one of the Si diodes.
4.65 mA
5.15 mA
6.45 mA
1.55 mA
Consider the circuit in figure 1. What is the voltage drop across one of the Si diodes if it is connected in REVERSE?
0.7 V
10 V
0 V
3.7 V
Varying the width of the depletion region of a diode through the application of a reverse bias voltage is equivalent to varying the plate separation of a very small capacitor.
Voltage-controlled oscillator
Varactor diode
PIN diode
Schottky diode
To regulate voltage, a zener should be placed __ with the load.
Reverse-bias in shunt
Forward-bias in shunt
Reverse-bias in series
Forward-bias in series
What will not cause a Zener to breakdown?
Excessive heat
Excessive current
Excessive power
Excessive voltage
A reverse bias voltage is applied to a zener. If the applied voltage is greater that the zener rating, what is the voltage across the zener?
Equal to the applied voltage
Equal to the zener voltage
Depends on the load resistance
Depends on the series resistance
What is the condition of a zener during forward bias with the applied voltage less than the treshold?
On
Off
Regulating
All of the above
Which of the following is/are advantages of solid-state transistors?
smaller and lightweight
rugged construction
no heater loss
All of the above
The region in the BJT which is thin and lightly doped
base
emitter
drain
collector
For the fixed bias arrangement shown, calculate the base current IB if RB = 150 kΩ, RC = 4.7 kΩ, VCC = 18 V, and ß = 90.
115.33 μA
116.33 μA
120.44 μA
121.44 μA
A bipolar junction transistor is used as a power control switch by biasing it in the cut-off region or in the saturation region. In the ON state, for the BJT
both the base-emitter junction and base-collector junctions are reverse biased
the base-emitter is reverse biased, and the base-collector junction is forward biased
the base-emitter junction is forward biased, and the base-collector junction is reverse biased
both the base-emitter and base-collector junctions are forward biased
For the fixed bias arrangement shown, calculate the collector current IC if RB = 68 kΩ, RC = 2.2 kΩ, VCC = 15 V, and ß = 70.
14.72 mA
17.24 mA
12.47 mA
21.74 mA
The best approximation for Vc in the circuit shown will be (assume ß to be high)
4 V
10.7 V
6.8 V
8.7 V
When a diode is reverse biased, the depletion
region widens. Since it is in between positively
charged holes and negatively charged electrons,
it will have an effect of a capacitor. This
capacitance is called?
diffusion capacitance
storage capacitance
stray capacitance
transition capacitance
In a semiconductor diode, the total
capacitance, that is the capacitance
between terminals and electrodes, and the
internal voltage variable capacitance of the
junction is called
diffusion capacitance
transition capacitance
depletion-region capacitance
diode capacitance
What capacitance is significant when the
diode is forward biased?
diffusion or storage capacitance
transition capacitance
depletion-region capacitance
stray capacitance
It is the magnitude of current that the diode can handle without burning when forward biased.
Forward current
Forward Voltage
Reverse saturation current
Reverse Recovery time
It is a required voltage in order to produce forward current. This is also the voltage drop across the diode during conduction.
Forward Voltage
Forward Current
Reverse Saturation Current
Reverse Breakdown Voltage
This also known as leakage current
Forward Current
Reverse Saturation Current
Maximum Power Dissipation
Reverse Breakdown Voltage
It is a maximum reverse voltage that can be applied before current surges and enter the avalanche region.
Reverse Breakdown Voltage
Forward Voltage
Maximum Power Dissipation
Reverse Saturation Current
Time taken by the diode to operate in the reverse conduction from forward conduction.
Reverse Recovery Time
Reverse Saturation current
Forward current
Reverse Breakdown Voltage
a maximum power the diode can handle without burning
maximum power dissipation
forward voltage
reverse saturation current
reverse breakdown voltage
a maximum temperature of the diode can operate before burning its junction.
maximum junction temperature
linear power derating factor
maximum power dissipation
reverse recovery time
a reduction of power handling capability of the diode due to the increase of ambient temperature from room temperature
linear power derating factor
maximum power dissipation
maximum junction temperature
forward voltage
A diode that can be used as an oscillator or amplifier.
tunnel diode
zener
schottky diode
varactor
a diode that is biased to operate in the negative resistance region.
tunnel diode
zener diode
schottky diode
varactor
Voltage variable capacitor is a device that
utilizes the variation of the PN junction
capacitance when biased differently.
Varactor
tunnel diode
zener diode
LED
a type of PN junction
that emits light when forward biased.
LED
Varactor
Schottky Diode
photodiode
It has small transparent window that allow light to strike the PN junction
photodiode
LED
tunnel
LED
Which semiconductor diode is mostly used
to detect near infrared?
silicon
germanium
carbon
Silicon carbide
The primary use of zener diode in
electronic circuits.
resistance regulator
rectifier
voltage regulator
current regulator
A diode that is especially designed to
operate as a voltage-variable capacitor. It
utilizes the junction capacitance of a
semiconductor diode
varactor
varistor
varicap
both varactor and varicap
The capacitance of a varactor will _____
when the reverse-bias voltage is increased.
increase
decrease
exponentially decrease
not change
Refers to a special type of diode which is
capable of both amplification and
oscillation.
junction
tunnel
point-contact
zener
The process of emitting photons from a
semiconductive material is called
photoluminescence
electroluminescence
gallium arsenide
gallium phosphide
Silicon and Germanium are not used in
LEDs because
A. they emit heat instead of light
B. they emit very low amount of emitted light
C. they have low threshold voltage
D. A and B are correct
A diode capable of regulating current
constant-current diode
zener diode
current-controlled device
all of these
Schottky diodes are also known as
hot-carrier diode
tunnel diode
PIN diode
point-contact diode
A diode consisting of heavily doped P and
N regions separated by an intrinsic region.
hot-carrier diode
tunnel diode
PIN diode
point-contact diode
Board Exam Question
The application of a
forward-bias potential to a PN junction will
make the majority carriers flow away from the
junction
increase the width of the PN junction
decrease the width of the PN junction
none of the above
Board Exam Question
The normal operating region
for a zener diode is the
forward-bias region
reverse-bias region
zero-crossing region
reverse-breakdown region
