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Worksheets

Solid state device

Total questions: 75

Worksheet time: 3hrs 30mins

Name
Class
Date
1.

Which of the following is not one of the most frequently used

semiconductors in the construction of electronic devices?

a)

Carbon

b)

Germanium

c)

Silicon

d)

Gallium Arsenide

2.

A positive ion is formed when

a)

a valence electron breaks away from the atom

b)

there are more holes than electrons in the outer orbit

c)

two atoms bond together

d)

an atom gains an extra valence electron

3.

The difference between an insulator and semiconductor is

a)

a wider energy gap between the valence band and the conduction band

b)

the number of free electrons

c)

the atomic structure

d)

all of the above

4.

Electron-hole pairs are produced by

a)

recombination

b)

ionization

c)

thermal energy

d)

doping

5.

Recombination is when

a)

an electron falls into a hole

b)

a positive and negative ion bond together

c)

a valence electron becomes a conduction electron

d)

a crystal is formed

6.

The current in a semiconductor is produced by

a)

electrons only

b)

negative ions

c)

both electrons and holes

d)

holes only

7.

In an intrinsic semiconductor,

a)

there are no free electrons

b)

the free electrons are thermally produced

c)

there are only holes

d)

there are more electrons than holes

8.

The process of adding an impurity to an intrinsic semiconductor is called

a)

doping

b)

atomic modification

c)

recombination

d)

ionization

9.

A trivalent impurity is added to silicon to create

a)

depletion region

b)

a p-type semiconductor

c)

an n-type semiconductor

d)

germanium

10.

The purpose of pentavalent impurity is to

a)

increase the number of free electrons

b)

increase the number of holes

c)

reduce the conductivity of silicon

d)

create minority carriers

11.

The majority carriers in an n-type semiconductor are

a)

holes

b)

valence electrons

c)

protons

d)

conduction electrons

12.

A pn junction is formed by

a)

ionization

b)

the recombination of holes and electrons

c)

the collision of a proton and a neutron

d)

the boundary of a p-type and an n-material

13.

The depletion region is created by

a)

ionization

b)

diffusion

c)

recombination

d)

all of these

14.

In a semiconductor material, what will happen to the number of free electrons when the temperature rises?

a)

decreases

b)

increases

c)

remains the same

d)

decrease exponentially

15.

A diode is operating at a temperature of 20°C. Determine the thermal voltage VT.

a)

24.35 mV

b)

25.25 mV

c)

26.75 mV

d)

25.36 mV

16.

What is the forward diode current if it operates at a temperature of 20°C and the

diode voltage drop is 0.65 with a reverse saturation current of

10nA?

a)

3.65 mA

b)

3.89 mA

c)

3.55 mA

d)

4.12 mA

17.

BJT is constructed with ______ doped semiconductor regions

separated by ____ PN junctions.

a)

two, three

b)

three, three

c)

three, two

d)

two, two

18.

For operation as an amplifier, the base of an NPN transistor must

be _______ with respect to ________.

a)

positive, emitter

b)

positive, collector

c)

negative, ground

d)

negative, emitter

19.

The bias condition for a transistor to be used as a linear amplifier

is called

a)

forward-forward

b)

voltage-divider

c)

forward-reverse

d)

reverse-reverse

20.

A JFET always operates with

a)

the gate-to-source pn junction forward-biased

b)

the gate-to-source pn junction reverse-biased*

c)

the drain connected to ground

d)

the gate connected to the source

21.

A MOSFET differs from a JFET mainly because

a)

MOSFET do not have channel

b)

the JFET has pn junction

c)

of the power rating

d)

MOSFET has 2 gates

22.

An n-channel D-MOSFET with a positive VGS is operating in

a)

depletion mode

b)

cutoff

c)

saturation

d)

enhancement mode

23.

Boron atoms are diffused into a pure silicon material. The net charge of the resulting material is __.

a)

neutral

b)

positive

c)

negative

d)

either positive or negative

24.

When electron carriers from an N-type material goes to the hole in the adjacent P-type material, __.

a)

An electron-hole pair is created, and the electrons are no longer carriers

b)

Carriers are regenerated, resulting to more current flow

c)

There is a movement of carriers giving rise to minority current flow

d)

An electron-hole pair is created, giving rise to hole flow

25.

Charges that only shift positions and does not move in response to electric field

a)

Polarized

b)

Non-polarized

c)

Bounded

d)

Unbounded

26.

Which of the following statements is true?

a)

Dielectrics have a very high energy gap

b)

The valance electrons are free electrons

c)

The mobility of electrons and holes in a semiconductor are equal

d)

The charge densities of free electrons and holes in a semiconductor material are equal.

27.

The excess electrons that do not participate in the covalent bonding during the doping process.

a)

Dopants

b)

Majority Carriers

c)

Holes

d)

Minority Carriers

28.

The current that exist in the reverse-bias condition is ___.

a)

Dark Current

b)

Reverse saturation current

c)

Reverse-bias current

d)

Zero

29.

Which of the following causes the diode not to conduct? Consider VF as the forward voltage and VR as a reverse voltage. (1) |VF| > |VTH| (2)|VF| < |VTH| (3) VF=0 (4) |VR|=|VF|

a)

2 and 3 only

b)

2, 3 and 4 only

c)

1, 2, 3 and 4

d)

1 only

30.

Which of the following is NOT true when a diode is forward biased? (1) Maximum current (2) Maximum voltage (3) Maximum Resistance (4) Maximum power

a)

2 and 3 only

b)

1 and 4 only

c)

1 and 3 only

d)

2 and 4 only

31.

A power supply unit component that converts a sinusoidal wave into a pulsating type.

a)

Rectifier

b)

Transformer

c)

Filter

d)

Regulator

32.

Consider the circuit in figure 1. Calculate the voltage VQ.

a)

10 V

b)

9.3 V

c)

9.7 V

d)

6.2 V

33.

Consider the circuit in figure 1. Which of the following is true about the bias of the diodes?

a)

D1 is FB and D2 is RB

b)

D1 is RB and D2 is FB

c)

Both diodes are FB

d)

Both diodes are RB

34.

Consider the circuit in figure 1. Which of the following statements is true?

a)

The voltage across ab is 0.7V

b)

The current through one of the Si diodes is equal to twice the total current.

c)

The current through the 2kohm load resistor is the total current.

d)

The voltage across ab is 1.4V

35.

Consider the circuit in figure 1. Calculate the current through one of the Si diodes.

a)

4.65 mA

b)

5.15 mA

c)

6.45 mA

d)

1.55 mA

36.

Consider the circuit in figure 1. What is the voltage drop across one of the Si diodes if it is connected in REVERSE?

a)

0.7 V

b)

10 V

c)

0 V

d)

3.7 V

37.

Varying the width of the depletion region of a diode through the application of a reverse bias voltage is equivalent to varying the plate separation of a very small capacitor.

a)

Voltage-controlled oscillator

b)

Varactor diode

c)

PIN diode

d)

Schottky diode

38.

To regulate voltage, a zener should be placed __ with the load.

a)

Reverse-bias in shunt

b)

Forward-bias in shunt

c)

Reverse-bias in series

d)

Forward-bias in series

39.

What will not cause a Zener to breakdown?

a)

Excessive heat

b)

Excessive current

c)

Excessive power

d)

Excessive voltage

40.

A reverse bias voltage is applied to a zener. If the applied voltage is greater that the zener rating, what is the voltage across the zener?

a)

Equal to the applied voltage

b)

Equal to the zener voltage

c)

Depends on the load resistance

d)

Depends on the series resistance

41.

What is the condition of a zener during forward bias with the applied voltage less than the treshold?

a)

On

b)

Off

c)

Regulating

d)

All of the above

42.

Which of the following is/are advantages of solid-state transistors?

a)

smaller and lightweight

b)

rugged construction

c)

no heater loss

d)

All of the above

43.

The region in the BJT which is thin and lightly doped

a)

base

b)

emitter

c)

drain

d)

collector

44.

For the fixed bias arrangement shown, calculate the base current IB if RB = 150 kΩ, RC = 4.7 kΩ, VCC = 18 V, and ß = 90.

a)

115.33 μA

b)

116.33 μA

c)

120.44 μA

d)

121.44 μA

45.

A bipolar junction transistor is used as a power control switch by biasing it in the cut-off region or in the saturation region. In the ON state, for the BJT

a)

both the base-emitter junction and base-collector junctions are reverse biased

b)

the base-emitter is reverse biased, and the base-collector junction is forward biased

c)

the base-emitter junction is forward biased, and the base-collector junction is reverse biased

d)

both the base-emitter and base-collector junctions are forward biased

46.

For the fixed bias arrangement shown, calculate the collector current IC if RB = 68 kΩ, RC = 2.2 kΩ, VCC = 15 V, and ß = 70.

a)

14.72 mA

b)

17.24 mA

c)

12.47 mA

d)

21.74 mA

47.

The best approximation for Vc in the circuit shown will be (assume ß to be high)

a)

4 V

b)

10.7 V

c)

6.8 V

d)

8.7 V

48.

When a diode is reverse biased, the depletion

region widens. Since it is in between positively

charged holes and negatively charged electrons,

it will have an effect of a capacitor. This

capacitance is called?

a)

diffusion capacitance

b)

storage capacitance

c)

stray capacitance

d)

transition capacitance

49.

In a semiconductor diode, the total

capacitance, that is the capacitance

between terminals and electrodes, and the

internal voltage variable capacitance of the

junction is called

a)

diffusion capacitance

b)

transition capacitance

c)

depletion-region capacitance

d)

diode capacitance

50.

What capacitance is significant when the

diode is forward biased?

a)

diffusion or storage capacitance

b)

transition capacitance

c)

depletion-region capacitance

d)

stray capacitance

51.

It is the magnitude of current that the diode can handle without burning when forward biased.

a)

Forward current

b)

Forward Voltage

c)

Reverse saturation current

d)

Reverse Recovery time

52.

It is a required voltage in order to produce forward current. This is also the voltage drop across the diode during conduction.

a)

Forward Voltage

b)

Forward Current

c)

Reverse Saturation Current

d)

Reverse Breakdown Voltage

53.

This also known as leakage current

a)

Forward Current

b)

Reverse Saturation Current

c)

Maximum Power Dissipation

d)

Reverse Breakdown Voltage

54.

It is a maximum reverse voltage that can be applied before current surges and enter the avalanche region.

a)

Reverse Breakdown Voltage

b)

Forward Voltage

c)

Maximum Power Dissipation

d)

Reverse Saturation Current

55.

Time taken by the diode to operate in the reverse conduction from forward conduction.

a)

Reverse Recovery Time

b)

Reverse Saturation current

c)

Forward current

d)

Reverse Breakdown Voltage

56.

a maximum power the diode can handle without burning

a)

maximum power dissipation

b)

forward voltage

c)

reverse saturation current

d)

reverse breakdown voltage

57.

a maximum temperature of the diode can operate before burning its junction.

a)

maximum junction temperature

b)

linear power derating factor

c)

maximum power dissipation

d)

reverse recovery time

58.

a reduction of power handling capability of the diode due to the increase of ambient temperature from room temperature

a)

linear power derating factor

b)

maximum power dissipation

c)

maximum junction temperature

d)

forward voltage

59.

A diode that can be used as an oscillator or amplifier.

a)

tunnel diode

b)

zener

c)

schottky diode

d)

varactor

60.

a diode that is biased to operate in the negative resistance region.

a)

tunnel diode

b)

zener diode

c)

schottky diode

d)

varactor

61.

Voltage variable capacitor is a device that

utilizes the variation of the PN junction

capacitance when biased differently.

a)

Varactor

b)

tunnel diode

c)

zener diode

d)

LED

62.

a type of PN junction

that emits light when forward biased.

a)

LED

b)

Varactor

c)

Schottky Diode

d)

photodiode

63.

It has small transparent window that allow light to strike the PN junction

a)

photodiode

b)

LED

c)

tunnel

d)

LED

64.

Which semiconductor diode is mostly used

to detect near infrared?

a)

silicon

b)

germanium

c)

carbon

d)

Silicon carbide

65.

The primary use of zener diode in

electronic circuits.

a)

resistance regulator

b)

rectifier

c)

voltage regulator

d)

current regulator

66.

A diode that is especially designed to

operate as a voltage-variable capacitor. It

utilizes the junction capacitance of a

semiconductor diode

a)

varactor

b)

varistor

c)

varicap

d)

both varactor and varicap

67.

The capacitance of a varactor will _____

when the reverse-bias voltage is increased.

a)

increase

b)

decrease

c)

exponentially decrease

d)

not change

68.

Refers to a special type of diode which is

capable of both amplification and

oscillation.

a)

junction

b)

tunnel

c)

point-contact

d)

zener

69.

The process of emitting photons from a

semiconductive material is called

a)

photoluminescence

b)

electroluminescence

c)

gallium arsenide

d)

gallium phosphide

70.

Silicon and Germanium are not used in

LEDs because

a)

A. they emit heat instead of light

b)

B. they emit very low amount of emitted light

c)

C. they have low threshold voltage

d)

D. A and B are correct

71.

A diode capable of regulating current

a)

constant-current diode

b)

zener diode

c)

current-controlled device

d)

all of these

72.

Schottky diodes are also known as

a)

hot-carrier diode

b)

tunnel diode

c)

PIN diode

d)

point-contact diode

73.

A diode consisting of heavily doped P and

N regions separated by an intrinsic region.

a)

hot-carrier diode

b)

tunnel diode

c)

PIN diode

d)

point-contact diode

74.

Board Exam Question

The application of a

forward-bias potential to a PN junction will

a)

make the majority carriers flow away from the

junction

b)

increase the width of the PN junction

c)

decrease the width of the PN junction

d)

none of the above

75.

Board Exam Question

The normal operating region

for a zener diode is the

a)

forward-bias region

b)

reverse-bias region

c)

zero-crossing region

d)

reverse-breakdown region