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WorksheetsSURE Trust - Integrated VLSI(G2) Quiz 1 -
Total questions: 20
Worksheet time: 20mins
A twin tub CMOS process used to manufacture integrated circuits has:
None of these
Both N-Well and P-Well
P-Well
N-Well
Metallic Grade Silicon (MGS) used to manufacture Electronics Grade Silicon (EGS) is:
90 % pure
98 % pure
99.999 % pure
None of these
In lithography, on exposure to ultraviolet light ( UV Light ) a negative photoresist:
Dissolves
Polymerizes
Evaporates
None of these
Electronic Grade Silicon (EGS) used to make silicon wafers is:
90 % pure
98 % pure
99.999 % pure
None of these
Gate oxide of a MOSFET is made of:
Silicon
Silicon Dioxide
Silicon Nitride
None of these
The bulk terminal of the NMOS transistor in a CMOS inverter is connected to:
VDD
VSS
Either of VDD or VSS
None of these
In a CMOS process, resistors can be made using:
Polysilicon
N Well
N Type and P Type diffusions
All of these
Oxidation of silicon to form silicon dioxide can be done using:
Dry oxidation method
Wet oxidation method
Both
None
In a CMOS process N Well and N Type and P Type diffusions can be formed using:
Diffusion
Ion Implantation
Both
None
In a CMOS process, capacitors can be formed using:
Two layers of polysilicon with oxide in between
Two layers of metal with oxide in between
MOSFET biased and used as a capacitor
All of these
What is the effect of Drain Induced barrier lowering on Vt?
Vt increases
Vt decreases
Vt remains same
does not effect Vt
How do you model channel length modulation in MOSFET small signal model?
Current source
Resistor
Capacitor
Voltage source
A mosfet in linear region can be modeled as?
Current source
Resistor
Capacitor
Open circuit
What does MOSFET stand for
Metal-oxide-semiconductor-field-effect-transistor
Metal-On-Sillicon-field-effect-transistor
Magnetic-oxide-sillicon-field-effect-transistor
Microchip-oxide-sillicon-field-effect-transistor
What parameter characterizes the sensitivity of a MOSFET to changes in gate voltage?
Transconductance
Threshold voltage
Drain current
Gate capacitance
What happens to the pinch off point in saturation as you increase VDS ?
Moves towards drain
moves away from drain
doesn’t effect
None of the above
What happens to current ID of MOSFET with CLM
(Channel length modulation)?
Current remains same
No current
Current increases
Current decreases
Body effect occurs in which case of bulk connection VB for an nmos?
VB= 0
VB= -ve
VB= VS
VB > 0
Why velocity saturation happens in MOSFET
because of high drain voltage
because of high Electric field between S & D
because of high gate voltage
because of high electric field between gate & channel
MOSFET is a
Current controlled current source
Voltage controlled current source
Voltage controlled voltage source
Current controlled voltage source
