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Semiconductors

Total questions: 36

Worksheet time: 18mins

Name
Class
Date
1.

Which among these is the fundamental characteristic of a p type semiconductor

a)

Electrons are the majority charge carriers

b)

Has a tendency to gain an electron

c)

Has a tendency to donate an electron

d)

Easy to conduct electricity

2.

Who contribute to the current in a semiconductor

a)

electrons only

b)

holes only

c)

negative ions

d)

both electrons and holes

3.

____________ are the charge carriers in N- type semiconductors.

a)

electrons

b)

protons

c)


holes

d)


neutrons

4.

P, Sb, As doped with pure Si are the examples of

a)

P-type semiconductor

b)

Penta valent impurities

c)


Intrinsic semiconductors

d)

N-type semiconductors

5.

For intrinsic semiconductor, the number of electrons in the conduction band __________ the number of holes in the valence band.

a)

will be less than

b)

is equal to

c)

will be greater than

d)

will be less than or equal to

6.

The process of adding impurities to a pure semiconductor is called

a)

mixing

b)

diffusing

c)

doping

d)

refining

7.

The pure Si and Ge Semiconducting materials have ___________ bonds.

a)

ionic

b)

covalent

c)

hydrogen

d)

metallic

8.

The minority carriers in P-type silicon are called _________________

a)

Proton

b)

Neutron

c)

Electron

d)


Hole

9.

Component that Convert AC to DC and allow current to flow in one Direction

a)

Capacitor

b)

Diode

c)

Inverter

d)

Resistor

10.

Diodes are Categorize as ?

a)

passive

b)

active

c)

conductor

d)

insulator

11.

The region on either side of the junction which becomes free from the mobile charge carriers is called

a)

Energy gap region

b)

Charge free region

c)

Depletion region

d)

Diffusion region

12.

Characteristics of a diode that helps in rectification

a)

conducts in reverse biased

b)

Opposes the flow of current

c)

Allows Unidirectional flow of current

d)

Allows Bidirectional flow of current

13.

Zener diodes are mostly used for

a)

rectifier circuits

b)

solar cells

c)


Voltage regulator circuits

d)

Filter Circuits

14.

In the forward bias arrangement of a p-n junction diode,

a)

the n-end is connected to the positive terminal of the battery

b)

the p-end is connected to the positive terminal of the battery

c)

the direction of current is from n-end to p-end in the diode

d)

the p-end is connected to the negative terminal of the battery

15.

During formation of p-n junction

a)

a hole diffuses from p to n side

b)


an electron diffuses from n to p side

c)

a hole diffuses from n to p side

d)

an electron diffuses from p to n side

16.

The depletiom energy gap for Germanium is of the order of

a)

0.3 eV

b)

0.7 eV

c)

1.1 eV

d)

10 eV

17.

Which of the following is a pentavalent impuity added while forming an extrinsic semiconductor ?

a)

Boron 

b)

Arsenic

c)

Indium

d)

Gallium

18.

The reverse current in a PN Junction diode is only due to 

a)

majority carriers

b)

minority carriers

c)

acceptor ions

d)

donor ions

19.

LED is

a)

Light Enhancing Diode

b)

Light Emitting Diode

c)

Light Emitting Detector

d)


Light Enhancing Detector

20.

Conductivity of semiconductor __________________ with increase in temperature.

a)

increases

b)

remains unchanged

c)


decreases

21.

The energy band in which free electrons exist is know as

a)

first band

b)

second band

c)

conduction band

d)

valence band

22.

What is the meaning of rectification?

a)


a process of smoothing using a capacitor

b)

a process of adding impurities to pure materials

c)

a process of converting an alternating current into a direct current by using a diode.

d)

Convert DC to AC

23.

A single-phase full wave mid-point type diode rectifier requires __________ number of diodes

a)

4

b)

2

c)

1

d)

3

24.

Bridge type diode rectifier requires __________ number of diodes

a)

2

b)

4

c)

1

d)

3

25.

The shown circuit is that of a

a)

Half wave rectification

b)

Center tapped full wave rectification

c)

Bridge rectifier

26.

Bridge rectifier is an alternative for

a)

Half wave

b)

Power rectifier

c)

Full wave rectifier

d)

Peak rectifier

27.

In a full wave rectifier, if the input frequency is 50 Hz, then output frequency will be

a)

50Hz

b)

75Hz

c)

100Hz

d)

25Hz

28.

The electrical resistance of the depletion layer is large because

a)

  1. It has a large number of charge carriers

b)

  1. It has no change carriers

c)

  1. It contains electrons as charge carriers

d)

  1. It has holes as charge carriers

29.

If the forward voltage in a semiconductor diode is doubled, the width of the depletion layer will

a)

  1. Become one-fourth

b)

  1. Remain unchanged

c)

  1. Become half

d)

  1. Become double

30.

When a PN junction diode is reverse biased

a)

  1. Electrons and holes move away from the junction depletion region

b)

  1. Electrons and holes are attracted towards each other and move towards the depletion region

c)

  1. Height of the potential barrier decreases

d)

  1. No change in the current takes place

31.

In the depletion region of an unbiased PN junction diode there are

a)

  1. Only holes

b)

  2. Only fixed ions

c)

  1. Only electrons

d)

  1. Both electrons and holes

32.

On increasing the reverse bias to a large value in a PN junction diode, current

a)

  1. Remains fixed

b)

  1. Decreases slowly

c)

  1. Increases slowly

d)

  1. Suddenly increases

33.

In the breakdown region zener diode acts as .................. source

a)

constant current

b)

constant resistance

c)

constant voltage

d)

None of these

34.

The disadvantage of half wave rectifier is .............

a)

Expensive

b)

Diodes must have high power rating

c)

Output is difficult to filter

d)

None of these

35.

If the temperature of a diode increases, then leakage current ………..

a)

remains the same

b)

increases

c)

decreases

d)

becomes zero

36.

The knee voltage of a diode is approximately equal to ………….

a)

  1. applied voltage

b)

  1. forward voltage

c)

  1. breakdown voltage

d)

  1. barrier potential

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