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Worksheets

MOC QUIZ 3

Total questions: 15

Worksheet time: 8mins

Name
Class
Date
1.

The minimum VSWR possible is

a)

0

b)

1

c)

2

d)

Infinity

2.

In H Plane Tee, the electric field is:

a)

Perpendicular to the direction of propagation

b)

Parallel to the direction of propagation

c)

at an angle of 45 degrees to the direction of propagation

d)

dependent on the frequency os the signal

3.

What is the purpose of an E plane Tee?

a)

To split an input signals into two output signals

b)

To combine two input signals into one output signal

c)

To amplify the input signal

d)

To filter out unwanted frequencies from the input signal

4.

________ is a three-port microwave device that can be lossless and matched at all spots.

a)

Hybrid junction

b)

Magic Tee

c)

Circulator

d)

Isolator

5.

The total number of ones in the scattering matrix of three port circulator is:

a)

5

b)

2

c)

3

d)

4

6.

The matrix of an ideal isolator is not ______

a)

Unitary

b)

Symmetric

c)

Lossless

d)

None of the mentioned

7.

Forward attenuation provided by a resonance ferrite isolator is:

a)

Zero

b)

Low

c)

High

d)

None of the mentioned

8.

When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:

a)

increases linearly

b)

decreases linearly

c)

increases exponentially

d)

decreases exponentially

9.

The klystron tube used in a klystron amplifier is a _________ type beam amplifier.

a)

Linear beam

b)

Crossed field

10.

The device commonly used in microwave ovens is the:

a)

TWT

b)

Klystron

c)

Magneton

d)

FWCFA

11.

Directional couplers for waveguides are characterized by:

a)

their insertion loss

b)

their coupling coefficient

c)

their directivity

d)

all of the above

12.

The dominant mode of propagation in rectangular waveguides.

a)

TM10

b)

TE11

c)

TE21

d)

TE10

13.

For Gunn diodes, gallium arsenide is preferred to silicon because the former

a)

has a suitable empty energy band, which silicon does not have

b)

has a higher ion mobility

c)

has a lower noise at the highest frequencies

d)

is capable of handling higher power densities

14.

One of the following microwave diodes is suitable for very low-power oscillators only:

a)

Tunnel

b)

avalanche

c)

GUNN

d)

IMPATT

15.

The waveguide tee in which the axis of the side arm is shunting the E field of the main waveguide

a)

E plane Tee

b)

H plane Tee