WorksheetsLabQuiz
Total questions: 25
Worksheet time: 10mins
In a forward biased PN junction diode, current through the diode
Increases linearly when the applied voltage exceeds the cut-in voltage
Increases exponentially when the applied voltage exceeds the breakdown voltage
Increases exponentially when the applied voltage exceeds the cut-in voltage
Decreases exponetially when the applied voltage exceeds the knee voltage
Forward resistance of PN junction diode is obtained from
Slope of I-V characteristics in forward bias
Inverse of the slope of I-V characteristics in forward bias
Area under I-V characteristics in forward bias
Slope of I-V characteristics in reverse bias
An important application of zener diode is
Amplifier
Voltage regulator
Switch
Rectifier
In a P+ N Junction diode, the depletion region
Extends more towards the N region
Extends more towards the P region
Extends equally towards both regions
width cannot be determined
The cut-in voltage of a germanium diode is approximately
1 volt
0.7 volt
3 volt
0.3 volt
Which of the following statements is true for a revverse biased PN junction diode?
The current through the diode is independent of the applied reverse bias voltage
The current through the diode increases with applied reverse bias voltage
The current through the diode decreases with applied reverse bias voltage
The current through the diode first decreases and then increases with applied reverse bias voltage
The current through a reverse biased PN junction is due to
Both majority and minority carriers in the P and N regions
Minority carriers in the P and N regions
Majority carriers in the P and N regions
cannot be determined
The majority and minority carriers in the P region of a PN junction diode are
Electrons and holes respectively
Holes
Holes and Electrons respectively
Electrons
The depletion region in a PN junction is formed due to
diffusion of of electrons and holes at the junction
recombination of electrons and holes at the junction
drift of electrons and holes at the junction
generation of electrons and holes at the junction
The contact potential at the PN junction
Reduces when PN junction is forward biased
Increases when PN junction is forward biased
Reduces when PN junction is reverse biased
Remains unchanged when biased
The relation between terminal currents in a BJT can be expressed as
Ic=Ib+Ie
Ic=Ib - Ie
Ic=Ie-Ib
Ib=Ie+Ic
The current amplification factor of BJT in common emitter configuration is
Ic/Ie
Ie/Ib
Ib/Ic
Ic/Ib
Which BJT configuration is used as a current amplifier?
Common Emitter
Common Base
Common Collector
None of the above
Which are the three regions of operation of a BJT?
Linear region, Active region, Saturation region
Linear region, Active region, Breakdown region
Cut-off region, Active region, Saturation region
Cut-off region, Active region, Breakdown region
In which region should the BJT be operated in order to function as an amplifier?
Linear region
Active region
Saturation region
Breakdown region
In which region does the BJT operate as a switch in OFF condition
Saturation region
Active region
Cut off region
Breakdown region
A BJT when operated in the saturation region acts as a
"ON" switch
"OFF" switch
amplifier
voltage regulator
What is the effect of base width modulation on the input characteristics of BJT in common emiiter configuration?
Input characteristics shifts towards left for increasing VCE.
Input characteristics shifts towards right for increasing VCE.
Input characteristics does not change for increasing VCE.
Cannot say
For a BJT in common emitter configuration, as the Collector to Emitter voltge ( Vce) is increased
width of base and collector reduces, but reduction in base width is more
width of base and collector reduces, but reduction in collector width is more
width of base and collector reduces equally
width of base and collector increases, but increases in base width is more
What is the effect of base width modulation on the terminal currents of a BJT?
For the same emitter current, base current and collector current increases
For the same emitter current, base current and collector current reduces
For the same emitter current, base current increases and collector current reduces.
For the same emitter current, base current reduces and collector current increases
The MOSFET which is "normally ON"
Enhancement type
Depletion type
NMOS
PMOS
MOSFET is a
Current controlled device and Id is the controlling voltage
Voltage controlled device and Vds is the controlling voltage
Voltage controlled device and Vgs is the controlling voltage
Voltage controlled or current controlled device
In an N channel MOSFET, which of the following statements is correct?
Drain current , Id flows if Vgs is +ve and greater than threshold voltage
Drain current , Id starts flowing when Vgs is -ve and lesser than threshold voltage
Drain current , Id starts flowing when Vgs is -ve and greater than threshold voltage
Drain current , Id starts flowing as soon as Vgs is applied
The terminals of a MOSFET are
Emitter, Base, Collector
Source, Drain, Emitter
Source, Drain, Base
Source, Drain, Gate
What are the baising conditions of the 2 junctions of BJT to function as an amplifier?
EB junction Forward biased, CB junction reverse biased
EB junction Forward biased, CB junction forward biased
EB junction reverse biased, CB junction reverse biased
EB junction Forward biased, CB junction not biased
