WorksheetsDiode and Semiconductor Quiz
Total questions: 103
Worksheet time: 1hrs 7mins
A semiconductor diode has a very high internal resistance when forward biased.
True
False
A semiconductor diode has no polarity.
True
False
A semiconductor diode is made from doped semiconductor materials.
True
False
What is the equation used to calculate the power dissipated across a diode?
PD=UDxID
PD=UDxRD
PD=UD2xID
All options are incorrect
Why is there a depletion region at the junction?
Manufacturing defects
All options are incorrect
Due to drift of charge carriers in the electric field
The diffusion of charge carriers allows recombination to occur at the junction
Which of the following will NOT damage a diode?
Excessive voltage across the diode
Excessive frequency of current through the diode
Excessive current through the diode
None of the options are correct
What types of currents will appear when two N-type and P-type semiconductors are joined together?
Drift current and ion current
Free electron current and valence electron current
Drift and diffusion currents of both electrons and holes
Diffusion current of holes and drift current of electrons
In N-type semiconductors, what is the majority charge carrier?
Electron
Positive ion
Hole
No charge carrier is majority
Which of the following is the most accurate explanation of the AC internal resistance of a diode?
The variation of internal resistance of the diode when working with AC signals
The internal resistance of the diode when a voltage is applied across it
The variation of internal resistance of the diode when switching from forward to reverse bias
The variation of internal resistance of the diode over time
In a half-wave rectifier circuit with an ideal diode, when the diode is in reverse bias, the current through the load is:
Less than 0
Greater than 0
Equal to 0
At maximum
Name the three low-frequency equivalent models of a diode.
In an ideal case, when the diode is in reverse bias, the current through the load is
Less than 0
Greater than 0
Equal to 0
Reaches maximum
Name the three equivalent low-frequency models of the diode
Ideal, linearization of each simple segment, and linearization of each segment (full)
Ideal, linearization of each simple segment, and linearization of multiple segments (full)
Ideal, near-ideal, and practical
Ideal, nonlinearization of each simple segment, and nonlinearization of each segment (full)
What is the main function of a zener diode?
Current stabilization
Voltage stabilization
Rectification
Voltage multiplication
With a diode, how do the linearization diagrams of each simple segment and full segment differ?
Internal resistance rd
Open voltage UD0 and diffusion capacitance (junction capacitance)
Open voltage UD0
Internal resistance rd and open voltage UD0
A PN junction is being reverse biased. The capacitance of the junction will decrease when
The reverse voltage increases
The reverse voltage decreases
Biasing for the junction stops
All proposed options are incorrect
The thermal voltage Ur at a temperature of 550C is approximately
28.3mV
25mV
26.1nV
29.9mV
The minimum number of diodes in a bridge rectifier circuit is
1 diode
2 diodes
3 diodes
4 diodes
Which of the following is NOT a characteristic application of a diode?
Signal amplification
Half-cycle rectification
Voltage clamping
Full-cycle rectification
When the bridge rectifier circuit operates:
Only 1 diode conducts, the others are off
2 diodes conduct, the others are off
3 diodes conduct, the others are off
All diodes conduct
How does an increase in temperature affect the operation of a diode?
The reverse saturation current of the diode decreases
The open voltage of the diode decreases
The diode cannot operate
The forward current maximum increases
The rectifier circuit has the task of
Converting alternating current to direct current
Converting
What happens to the forward voltage of a diode?
What is the function of a rectifier circuit?
Convert AC to DC
Convert DC to AC
Reduce ripple voltage of power supplies
Store energy in one half cycle and release in the other half cycle
What happens when a positive voltage is applied to the P region and a negative voltage to the N region of a PN junction?
The current through the junction increases
The current through the junction decreases
The width of the depletion region increases
The resistance of the junction increases
When a diode is forward biased, the depletion region will:
Narrow on both sides
Narrow on one side
Expand on both sides
Expand on one side
Basically unchanged
What is the contact potential at the depletion region of a silicon diode?
0.7V
0.3V
1.2V
1.5V
In a P-type semiconductor, a hole in the crystal lattice tends to:
Attract nearby holes closer
Push nearby holes away
Take an electron from a neighboring bond to fill its own vacancy
Take an electron near the nucleus of the dopant atom to fill its own vacancy
In a PN junction, the depletion region extends more into the semiconductor with:
Larger size
Lower doping concentration
Smaller size
Type P
Higher doping concentration
What is the minimum number of diodes in a half-wave rectifier circuit?
1 diode
2 diodes
3 diodes
3 diodes
To create pure semiconductors, why is high cleanliness required in the production room?
Minimize dust entering the crystal lattice
Ensure smooth production without external interference
All proposed options are incorrect
Producing semiconductors is harmful to health, high cleanliness helps protect workers' health
When a diode is forward biased, what happens?
When the diode is reverse biased, which statement is correct?
The diffusion current increases sharply while the drift current decreases.
The diffusion current and the drift current both increase.
The diffusion current decreases while the drift current increases but quickly reaches saturation.
The diffusion current decreases while the drift current increases rapidly.
Applying a positive voltage to the P region and a negative voltage to the N region of a PN junction causes:
The impedance of the junction layer increases.
The current through the junction layer increases.
The current through the junction layer decreases.
The width of the depletion region increases.
The minimum number of diodes in a full-wave rectifier circuit using a center-tapped transformer is:
1 diode
2 diodes
3 diodes
3 diodes
Let RD be the dynamic resistance of the diode, UD and ID are the voltage across and the current through the diode respectively. RD is calculated by the formula:
RD=dUD/dID
RD=UD/ID
All options are incorrect
RD=PD/ID
Which element is used to produce intrinsic semiconductors?
Zinc
Silicon
Lead
Copper
Regarding the electrical conductivity at room temperature, which statement is correct?
Semiconductors conduct electricity worse than insulators.
Semiconductors conduct electricity better than insulators.
All options are incorrect.
Semiconductors conduct electricity better than conductors.
In the silicon crystal lattice, the bond between two silicon atoms is:
Homopolar bond
All options are incorrect.
Uniform bond
Covalent bond
The diffusion current is the current of charge carriers under the condition of:
A concentration gradient of charge carriers between two semiconductor blocks that are connected.
An external current flowing through the semiconductor.
A size difference between two semiconductor blocks that are connected.
An external electric field applied.
When there is no external electric field, the current in the diode is zero due to which reason?
All proposed options are incorrect
Free electrons have combined completely with holes
Drift current and diffusion current balance each other and cancel each other out
The density of types of charge carriers on both sides of the junction has balanced, so there is no diffusion current
To create free electrons in the crystal lattice of a pure semiconductor at 0K, which option is INCORRECT?
Heating the semiconductor
No need to do anything because there are already many free electrons in the crystal lattice
Placing a radioactive source next to the semiconductor
Illuminating the semiconductor with light of short wavelength
A diode falls into the breakdown region due to electricity when?
The reverse voltage across the diode is greater than the breakdown value
The forward voltage across the diode is greater than the breakdown value
The reverse voltage applied to the diode is 0 but the diode is too hot
The forward current through the diode is too large
When a Si diode is forward biased, the current in the diode increases sharply when the forward voltage begins to exceed?
0.7V
0.3V
1.2V
1.5V
Drift current is the current of?
Electrons when there is a concentration gradient
All proposed options are incorrect
Holes when there is a concentration gradient
Both types of charge carriers under the influence of an electric field
In the breakdown region due to electricity, the current through the diode:
Is forward and decreases sharply with voltage
Is 0
Is a very large forward current that causes the diode to fail immediately
Is reverse saturation current
Is reverse but increases sharply with voltage
The effect of a capacitor connected in parallel with the output load of a rectifier circuit?
Rectifies alternating voltage into direct voltage
t
What is the effect of a large n on the diode?
It immediately damages the diode
It is a forward current and decreases sharply with voltage
What is the effect of a capacitor connected in parallel with the output load of the rectifier circuit?
Rectifies AC voltage to DC voltage
Doubles the output voltage
Reduces the ripple voltage of the output
Prevents high-frequency noise from going to its negative terminal
What is the common name for the regions on the volt-ampere characteristic curve of a diode?
Forward bias, reverse bias, overcurrent, thermal breakdown
Forward bias, reverse bias, overcurrent, overheating
Forward bias, reverse bias, breakdown due to electric (zener), breakdown due to heat
Forward bias, reverse bias, breakdown due to electric (zener), breakdown due to magnetism
In each covalent bond, how many electrons does each Si atom of intrinsic semiconductor contribute to the common bond?
2
7
8
1
What are the three low-frequency equivalent models of a diode?
Ideal, linearized simple segment, and fully linearized segment
Ideal, linearized simple segment, and fully linearized multiple segments
Ideal, near-ideal, and practical
Ideal, nonlinearized simple segment, and fully nonlinearized segment
Does a diode have high internal resistance when forward biased?
False
True
In a diode, what are the majority carriers?
Holes
Electrons in N-type semiconductor, holes in P-type semiconductor
Electrons
Electrons in P-type semiconductor, holes in N-type semiconductor
All of the above
What elements are included in P-type doped semiconductors?
Group III
Group III doped with Group IV
Group III doped with Group V
Group IV
Group V
The drift current in a diode is the current of?
Minority carriers
Majority carriers
Electrons
Holes
In the process of generating electrons and holes inside the intrinsic semiconductor crystal lattice, which type of carriers is more abundant?
Electrons are more than holes
Only
In the process of generating electrons and holes inside the pure semiconductor crystal lattice, which type of carriers is more numerous?
Electrons are more than holes
Only electrons or holes are generated
The number of electrons and holes is equal
Holes are more than electrons
If a voltage regulator diode has Uz equal to 4.7V, which statement is correct?
The forward voltage maximum is 4.7V
The opening voltage is 4.7V
All options are incorrect
The breakdown voltage due to electricity is 4.7V
Given the circuit as shown in the figure E=5V, R=8, rD=1, the diode is made from Si. To calculate the parameters of the circuit with an error of no more than 10%, which equivalent diagram of the diode is the most reasonable?
Linearize each segment fully
Ideal
Linearize each segment simply
High frequency
Apply a reverse voltage of 12V to a circuit consisting of a zener diode connected in series with a resistor R. If Uz=3V, what is the measured voltage across the zener diode?
12V
3V
9V
6V
An ideal diode operates like?
A switch
A conductor
A resistor
A capacitor
The zener diode has an important characteristic different from a regular diode?
Allows a larger forward current to pass through, suitable for high power applications
Has a very steep breakdown region (zener), suitable for voltage regulation applications
Has a larger reverse saturation current
Has a larger opening voltage
The volt-ampere characteristic of a diode does NOT depend on:
The type of semiconductor used for fabrication
The resistors and capacitors in the circuit where the diode operates
The temperature of the diode
The ionizing radiation direction of the diode
When the bridge rectifier circuit operates:
All diodes conduct
There are 2 conducting diodes, the others are blocked
There are 3 conducting diodes, the others are blocked
There is 1 conducting diode, the others are blocked
The nature of the movement of holes in the electric field is the movement of?
What is the nature of the movement of holes in the electric field?
Negative ion
Free electrons but in the opposite direction
Holes do not move
Valence electrons but in the opposite direction
Which of the following explains the internal resistance of a diode in the most accurate way?
The variation of internal resistance of the diode over time
The variation of internal resistance of the diode when it switches from forward to reverse bias
The variation of internal resistance of the diode when working with AC signals
The internal resistance of the diode when a voltage is applied across its terminals
At two points on the volt-ampere characteristic curve of the diode, the measured one-way internal resistance is 3.75 ohms (point 1) and 200 kohms (point 2). Which statement below is the most reasonable about the positions of the two points on the characteristic curve?
Both points are in the forward bias branch
Point 1 is at the origin, point 2 is in the reverse bias branch
Point 1 is in the forward bias branch, point 2 is in the reverse bias branch
Point 1 is in the forward bias branch, point 2 is in the breakdown region
What energy level does P-type semiconductor have compared to intrinsic semiconductor?
Energy level of the valence band
Energy level of donor impurities
Energy level of acceptor impurities
Energy level of the conduction band
Which statement is incorrect when comparing the half-wave rectifier circuit using a center-tapped transformer (1) with the bridge rectifier circuit (2)?
The number of diodes in (1) is less than in (2)
The output voltage drop of (1) is lower than that of (2)
The reverse voltage applied to the diode in (1) is lower than in (2)
The type of transformer supplying power to (1) is more complex than that for (2)
Which formula is used to calculate the AC internal resistance of a diode?
rd = m x Ur/Is
rd = UD/ID
rd = dUD/dID
All proposed options are incorrect
Fill in the blank.
Which formula is used to calculate the internal resistance of an AC diode?
rd = m x Ur/Is
rd = UD/ID
rd = dUD/dID
All given options are incorrect
For a circuit consisting of a power source supplying a diode in series with a resistor R, when is the linear approximation of the diode applicable?
UD is significant compared to UN and rd is significant compared to R
UD is significant compared to UN and rd is very small compared to R
UD is very small compared to UN and rd is significant compared to R
UD is very small compared to UN and rd is very small compared to R
The circuit shown in the figure is a circuit of what type?
Lower limit -E in parallel
Upper limit -E in parallel
Lower limit -E in series
Upper limit -E in series
Given the characteristic curve showing the relationship between Uout and Uin as shown in the figure, what type of circuit is this?
Upper limit
Bridge rectifier
Lower limit
Half-cycle rectifier
When the temperature of a diode (m=1) increases from 25 degrees Celsius (UT=25mV, IS=1nA, UD=0.5V) to 60 degrees Celsius (UT=28.7mV, IS=200nA, UD=0.45V), the current through the diode increases approximately by how much?
1.2 times
2.7 times
5 times
12 times
For a diode with the following parameters: m=1; UT=25mV; IS=1nA; UD=0.4V, the current through the diode is approximately what?
6.2mA
3mA
14mA
8.9mA
The diode in the figure is operating in the breakdown region due to voltage (Zener region). When the input voltage increases within a permissible range to avoid damaging the diode, what happens?
The voltage across Rt increases
The current Iz decreases
The voltage across Rt decreases
The current I decreases
The current It remains constant
At 25 degrees Celsius, a diode has PD(max)=1W, UD=0.7V. How many times does the maximum allowable current through the diode decrease when the temperature increases to 60 degrees Celsius (PD(max)=0.4W, UD=0.55V)?
4 times
2 times
1.3 times
2.8 times
Given the characteristics shown in the figure.
How many times does the maximum allowable current through the diode decrease when the temperature rises to 60 degrees Celsius?
4 times
2 times
1.3 times
2.8 times
Which diagram shows the characteristics of the circuit limiting the negative level?
Diagram A
Diagram C
Diagram B
Diagram D
What is the internal resistance of a diode with the following parameters: UD=0.8V, UT=25mV, IS=1nA, ID=20mA?
20Ω
30Ω
40Ω
60Ω
When a diode is forward-biased by a DC source and an AC voltage component with an amplitude of 0.1V is applied, the current through the diode varies around 20mA. What is the dynamic resistance of the diode approximately?
10Ω
20Ω
0.1Ω
1Ω
A diode is reverse-biased when:
The external current tends to flow in the same direction as the amplified current
The external electric field is in the same direction as the electric field at the junction in the depletion region
The external electric field is small enough, the direction of the electric field is not important
The external magnetic field is opposite to the electric field at the junction in the depletion region
What is the circuit in the diagram?
Upper limit
Lower limit
Both upper and lower limits
Left and right limit
For a diode with the following parameters: m=1; UT=25mV; IS=1nA; ID=500mA, what is the voltage across the diode approximately?
1.2V
0.5V
0.8V
0.1V
What is the thermal voltage UT at a temperature of 55 degrees Celsius approximately?
28.1mV
25mV
29.9mV
26.1mV
What is the characteristic of P-type semiconductors compared to intrinsic semiconductors?
Has 1 outermost electron of group 5 impurities participating in covalent bonds
Lacks 1 outermost electron of group 3 impurities in a covalent bond
No different from intrinsic semiconductors
Impurities provide free electrons
If a Zener diode has Uz equal to 4.7V, which of the following statements is correct?
The maximum forward voltage is 4.7V
The opening voltage is 4.7V
The breakdown voltage due to electricity is 4.7V
All options are incorrect
The drift current is the current:
Of electrons when there is a concentration gradient
C
What is the maximum forward voltage?
4.7V
4.7V
4.7V
All options are incorrect
What is the drift current?
Of electrons when there is a concentration gradient
Of holes when there is a concentration gradient
Of both types of charge carriers under the influence of an electric field
All options are incorrect
What type of circuit is shown in the diagram?
Lower limit in parallel connection
Upper limit in parallel connection
Lower limit in series connection
Upper limit in series connection
Can a diode create a stable DC voltage?
(a)
What happens when a diode in a rectifier circuit with 2 faulty diodes?
0V
Half cycle
Amplitude is reduced
No effect
What is a fixed DC voltage that establishes the operating conditions of a semiconductor component called?
Biasing
Voltage drop
Battery
Barrier potential
When a diode is forward-biased, what will it do?
Block current
Conduct current
Like an open switch
Like a closed switch
Answers B and D
What are the two biasing conditions for a diode?
Positive and Negative
Block and Unblock
Open and Closed
Forward and Reverse
What is the process of converting half-cycle or full-cycle rectified voltage into stable DC voltage called?
AC filtering
AC to DC conversion
Reducing voltage fluctuations
Eliminating ripple
What is a Zener diode occasionally used as?
Current limiting component
Power distribution component
Reference voltage component
Variable resistor
