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WorksheetsIntroduction to Power Electronic Devices
Total questions: 10
Worksheet time: 5mins
Which device is specifically designed to conduct current in both directions (bidirectional)?
SCR
GTO
TRIAC
IGBT
The IGBT combines the high input impedance of a ______ with the low on-state power loss of a ______.
BJT / SCR
MOSFET / BJT
GTO / MOSFET
BJT / MOSFET
To turn OFF a GTO, what type of signal must be applied to the gate?
Positive current pulse
Negative voltage pulse
Continuous positive voltage
No signal is required
A TRIAC is effectively equivalent to which internal arrangement?
Two MOSFETs in series
Two SCRs in inverse-parallel
One BJT and one MOSFET
Two GTOs in parallel
Which terminal is NOT found on an IGBT?
Collector
Emitter
Gate
Anode
An IGBT is a voltage-controlled device that turns ON when VGE is greater than the threshold voltage
True
False
A TRIAC can be triggered by either a positive or a negative gate current.
True
False
Like a conventional SCR, a GTO cannot be turned off using its gate terminal.
True
False
Latching current (IL) is the minimum current required to keep a device in the ON state after it has already been running.
True
False
The main structural difference between an IGBT and a MOSFET is the addition of a P+ substrate layer in the IGBT.
True
False
