
EPITAXY QUIZ
Professional Development
Professional Development
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10 questions
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1.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
What are the purposes by using Si-Epitaxy?
To enhance the performance of discrete bipolar transistor
Ability to contour and tailor the doping profile
Independent choice of Epi and raw wafer doping level
All of the above
2.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Which are the silicon precursors at IFKM Silicon Epitaxy?
Dichlorosilane & Tricholorosilane
Phosphine & Arsine
Silane & Disilane
Disilane & Dichlorosilane
3.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Epicent centura system include
I. Transfer chamber
II. Load port
III. Process chamber
IV. Exit chamber
I & II
I , II & III
I , II & IV
I , II , III & IV
4.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Following are the Epitaxy process step, except?
Temperature Ramp Step
Deposit Step
Stabilize Step
Temperature Down Step
5.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Which of the following statement is false?
Heating of the wafer indirect by lamps
Wafers mainly oriented parallel flow direction of process
gases
Existing oxygen inside the gas mixture will enhance the
crystal growth
All inner chamber parts who reach high temperature need to be
extremely clean
6.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
What is hetero-epitaxy?
I. Different substrate and film
II. Same substrate and film
III. More complicated, no chemical reaction between substrate and epi layer
IV. To fabricate integrate crystalline layers of different materials
I & III
II & IV
I , III & IV
II ,III & IV
7.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Which statement is defining the Vapor- phase Epitaxy (VPE)?
It is method to grow semiconductor crystal layers from the
melt on solid substrate
It is gas reactant control by MFC flow over the substrate and
react to deposit on top of substrate
It is a physical evaporation process
It is a source material is heated to produce an evaporate beam
of particles
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