POWER DIODE

An

ideal power diode must have

• low forward current carrying capacity

• large

  reverse breakdown voltage

• high ohmic junction resistance

• high

  reverse recovery time

To

make a signal diode suitable for high current & high voltage carrying

applications with minimum losses, ________

• a

  lightly doped n layer is grown between the two p & n layers

• a

  heavily doped n layer is grown between the two p & n layers

• a lightly doped p layer is grown between the

  two p & n layers

• a

  heavily doped p layer is grown between the two p & n layers

The V-I

Characteristics of the diode lie in the

• 1st

  & 2nd quadrant

• 1st

  & 3rd quadrant

• 1st

  & 4th quadrant

• Only in

  the 1st quadrant

Which

of the following is true in case of a power diode with R load?

• I grows

  almost linearly with V

• I decays almost linearly with V

• I is

  independent of V

• I

  initial grows than decays

Which

following is a two terminal three layer device?

• MOSFET

• BJT

• POWER

  DIODE

• SCR

which statement is correct? (the dark circles represent the electrons)

• p-type of the diode is connected to the negative terminal.

• Electron moves across the p-n junction, makes the diode forward biased

• current will not flow in the circuit

• reverse biased circuit

what is the meaning of rectification?

• a process of smoothing using a capacitor

• a process of adding impurities to pure materials

• a process of converting an alternating current into a direct current by using a diode.

Component that Convert AC to DC and allow current to flow in one Direction

• Capacitor

• Diode

• Inverter

• Resistor

What is the name of this Diode?

• PN junction

• LED

• silicon

• PNP

Diode has polarity

• anode and cathode

• on and off

• output and input

• none of the above