ECE411_NMOS

ECE411_NMOS

University

5 Qs

quiz-placeholder

Similar activities

PTA145 Unit 4 test review

PTA145 Unit 4 test review

University

10 Qs

FISH POSTHARVEST C1

FISH POSTHARVEST C1

University

10 Qs

Review of Hydraulics Engineering

Review of Hydraulics Engineering

University

10 Qs

Ch 18 Questions

Ch 18 Questions

University

10 Qs

วงจรดิจิทัล

วงจรดิจิทัล

University

10 Qs

TA Modul Dioda

TA Modul Dioda

University

10 Qs

Liposomes

Liposomes

8th Grade - University

10 Qs

Webinar Deep Learning

Webinar Deep Learning

10th Grade - Professional Development

10 Qs

ECE411_NMOS

ECE411_NMOS

Assessment

Quiz

Science

University

Practice Problem

Medium

Created by

Sameh Ibrahim

Used 3+ times

FREE Resource

AI

Enhance your content in a minute

Add similar questions
Adjust reading levels
Convert to real-world scenario
Translate activity
More...

5 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which mask determines the MOSFET width?

AA mask

Poly mask

CC mask

M1 mask

2.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Which mask determines the length of the MOSFET?

AA mask

Poly mask

CC mask

M1 mask

3.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

Patterns are first drawn by ultraviolet on which layer?

Si substrate

Silicon Oxide

Photoresist

Metal

4.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

In a poly-gate technology, which statement is true?

The drain is fabricated before the source and gate.

The source is fabricated before the drain and gate.

The gate is fabricated before the drain and source.

The drain, gate, and source are fabricated together.

5.

MULTIPLE CHOICE QUESTION

30 sec • 1 pt

The following is not a fabrication process

Ion Implantation

Etching

Oxidation

Fermentation