蝕刻基礎 Part-1

蝕刻基礎 Part-1

University

10 Qs

quiz-placeholder

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蝕刻基礎 Part-1

蝕刻基礎 Part-1

Assessment

Quiz

Physical Ed

University

Medium

Created by

Bruce Cheng

Used 5+ times

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10 questions

Show all answers

1.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

今天來上課的是tsmc 哪一個單位

Fab 12B

RDPC

F15B

F18A

2.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

今天上課的是哪一個部門

DIFF

CMP

LIT

ETCH

3.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

Dry Etch前, 通常是哪一個部門負責的製程

LIT

DIFF

CVD

PVD

4.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

為什麼LIT前需要CMP製程

便宜

平坦化,曝光不會Defocus

效能增強

沒事找事做

5.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

相對於WET etch, Dry etch 的優勢是 ?

Cost

Throughput

High Selectivity

Shrink Capability

6.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

Dry Etch 製程中負責Chemical etch的是 ?

Ion

Electron

Radical

Light

7.

MULTIPLE CHOICE QUESTION

10 sec • 1 pt

Dry etch 製程中負責物理轟擊的是 ?

Ion

Light

Radical

Electron

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