Chapter 11

A JFET

• Is a current-controlled device

• Is a voltage-controlled device

• Has a low input resistance

• Has a very large voltage gain

A unipolar transistor uses

• Either one or the other, but not both

• Only free electrons

• Both free electrons and holes

• Only holes

The input impedance of a JFET

• Is impossible to predict

• Approaches one

• Approaches zero

• Approaches infinity

The gate controls

• All of the above

• The width of the channel

• The drain current

• The gate voltage

The gate-source diode of a JFET should be

• Either forward or reverse biased

• None of the above

• Forward biased

• Reverse biased

Compared to a bipolar junction transistor, the JFET has a much higher

• Input resistance

• Current

• Supply voltage

• Voltage gain

The pinchoff voltage has the same magnitude as the

• Gate-source cutoff voltage

• Gate-source voltage

• Gate voltage

• Drain-source voltage

When the drain saturation current is less than IDSS, a JFET acts like a

• Bipolar junction transistor

• Current source

• Resistor

• Battery

RDS equals pinchoff voltage divided by

• Ideal drain current

• Drain current for zero gate voltage

• Gate current

• Drain current

The transconductance curve is

• Like a single drain curve

• Linear

• Nonlinear

• Similar to the graph of a resistor