CHAPTER 6 MODEL OF ANALOG IC DESIGN

Analog integrated circuit design primarily relies on

• Experience and knowledge
• Automation tools
• Mathematical models
• All of the above

Long-channel MOSFET models use which assumption in their MOSFET formulas?

• Ohm’s Law
• Square Law
• Kirchhoff’s Law
• Faraday’s Law

Parasitic capacitance in a MOSFET is caused by

• Charge accumulation in the oxide layer
• Temperature changes
• Short-channel effects
• Contact between metal layers

Short-channel effects impact

• Threshold voltage
• Parasitic capacitance
• Output resistance
• All of the above

The SPICE model of a MOSFET is used for

• Layout design
• Physical verification
• Simulation and performance analysis
• Chip packaging

In analog integrated circuit design, reducing the supply voltage affects

• Increased circuit complexity
• Reduced circuit performance
• Increased output resistance
• Increased noise in the circuit

The body effect in a MOSFET is caused by

• Voltage difference between the source and substrate
• Change in current through the drain
• Change in capacitance
• Change in resistance

The threshold voltage (V_TH) of a MOSFET depends on

• Doping concentration in the substrate
• Thickness of the oxide layer
• Voltage between the source and substrate
• All of the above

When a MOSFET operates in the saturation region, the drain current (I_D) depends on

• V_DS
• V_GS
• V_TH
• V_SB

The small-signal model of a MOSFET is used for

• Layout design
• DC operation analysis
• AC gain calculation
• Thermal simulation