
Electron Devices : Surprise Quiz -2

Quiz
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Education
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University
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Easy
Ragavapriya krishnasamy
Used 5+ times
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10 questions
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1.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
In a Tunnel Diode, what causes the negative resistance region in its I-V characteristics?
Recombination of minority carriers
Avalanche breakdown
Quantum tunneling through a narrow depletion layer
High injection level of majority carriers
2.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
A Unijunction Transistor (UJT) is used in a triggering circuit. Which of the following characteristics is critical for its operation?
Peak inverse voltage
Valley point voltage
Early voltage
Saturation current
3.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
Why are Avalanche Photodiodes preferred in optical communication receivers over PIN diodes?
Lower response time
Higher noise margin
Internal gain due to impact ionization
Simpler biasing requirements
4.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
In a MESFET, the metal-semiconductor junction acts as:
A forward-biased base
A rectifier
A conducting channel
A reverse-biased gate
5.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
What advantage do TFETs (Tunnel Field-Effect Transistors) offer over conventional MOSFETs in low-power digital circuits?
Higher threshold voltage
Larger gate capacitance
Steeper subthreshold slope
Higher drive current
6.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
HEMTs (High Electron Mobility Transistors) are typically made using which materials to achieve high electron mobility?
Silicon and silicon dioxide
GaAs and AlGaAs
Germanium and polysilicon
Indium and tin oxide
7.
MULTIPLE CHOICE QUESTION
30 sec • 1 pt
In a varactor diode, how does the capacitance vary with reverse bias voltage?
Increases linearly
Decreases exponentially
Remains constant
Inversely with the square root of voltage
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