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Worksheets

EDC - I

Total questions: 15

Worksheet time: 4mins

Name
Class
Date
1.

In a semiconductor which of the following carries can contribute to the current?

a)

Electrons

b)

Holes

c)

Both

d)

None

2.

Electrons from valence band rises to conduction band when the temperature is greater than 0 k. Is it True or False?

a)

True

b)

False

3.

In which of the following semiconductor, the concentration of the holes and electrons is equal?

a)

Intrinsic

b)

Extrinsic

c)

Compound

d)

Elemental

4.

Does a semiconductor satisfy the ohm’s law?

a)

True

b)

False

5.

If the positive terminal of the battery is connected to the anode of the diode, then it is known as

a)

Forward biased

b)

Reverse biased

c)

Equilibrium

d)

Schottky barrier

6.

During reverse bias, a small current develops known as

a)

Forward current

b)

Reverse current

c)

Reverse saturation current

d)

Active current

7.

If the voltage of the potential barrier is V0. A voltage V is applied to the input, at what moment will the barrier disappear?

a)

V< V0

b)

V= V0

c)

V> V0

d)

V<< V0

8.

Is possible to measure the voltage across the potential barrier through a voltmeter?

a)

Yes

b)

No

9.

The advantages over the vacuum triode for a junction transistor

a)

high power consumption

b)

high efficiency

c)

large size

d)

less doping

10.

In an NPN transistor, the arrow is pointed towards_________

a)

a) the collector

b)

b) the base

c)

c) depends on the configuration

d)

d) the emitter

11.

In the saturated region, the transistor acts like a_________

a)

a) poor transistor

b)

b) amplifier

c)

c) open switch

d)

d) closed switch

12.

If the emitter-base junction is forward biased and the collector-base junction is reverse biased, what will be the region of operation for a transistor?

a)

a) cut off region

b)

b) saturated region

c)

c) inverted region

d)

d) active region

13.

The transfer of a signal in a transistor is_________

a)

a) low to high resistance

b)

b) high to low resistance

c)

c) collector to base junction

d)

d) emitter to base junction

14.

Why is the silicon mostly chosen when compared to germanium?

a)

a) low power consumption

b)

b) high efficiency

c)

c) greater working temperature

d)

d) large ICBO

15.

A transistor has an IC of 100mA and IB of 0.5mA. What is the value of αdc?

a)

a) 0.565

b)

b) 0.754

c)

c) 1.24

d)

d) 0.995