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Power Semiconductor device

Total questions: 20

Worksheet time: 10mins

Name
Class
Date
1.

What is voltage control device

a)

SCR

b)

GTO

c)

MOSFET

d)

TRIAC

2.

What is semicontrol device

a)

SCR

b)

GTO

c)

MOSFET

d)

TRIAC

3.

What is voltage control device

a)

SCR

b)

GTO

c)

IGBT

d)

TRAIC

4.

How IGBT is developed

a)

MOSFET + BJT

b)

BJT+ IGBT

c)

MOSFET +GTO

d)

TRIAC +GTO

5.

Why IGBT is voltage control device

a)

Input is BJT

b)

Input is MOSFET

c)

Input is GTO

d)

Input is TRIAC

6.

What are terminals of IGBT

a)

G, C, S

b)

G, C, E

c)

G, D, S

d)

G, A, K

7.

what is construction of MOSFET

a)

NPN

b)

PNP

c)

NNPNN

d)

PNPPNN

8.

What is construction of Power MOSFET

a)

N, N-, P, N

b)

P, N-, P, N

c)

N, N-, P, P

d)

P, N-, P, N

9.

Drift region present in

a)

Normal MoSFET

b)

POwer MOSFET

10.

Construction of IGBT is

a)

P,P, N

b)

N, N, P

c)

PNP

d)

NPN

11.

Construction of Power IGBT is

a)

P+, N-, P, N

b)

N+, N-, P, N

c)

P+,P-, P, N

12.

Does gate terminal is directly connected to P layer

a)

Yes

b)

no

13.

Gate terminal of MOSFET & IGBT connected through

a)

Sio3

b)

sio2

c)

sio

d)

sio4

14.

Output characteristics of MOSFET is

a)

Id vs Vds

b)

Id vs Vgs

c)

Ig vs Vds

d)

Ig vs Vgs

15.

Transfer characteristics of IGBT is

a)

Ic vs Vge

b)

Ic vs Vgs

c)

Ic vs Vds

d)

Id vs Vgs

16.

Output characteristics

a)

Io vs Vin

b)

Io vs Vo

17.

Transfer characteristics

a)

Iip vs Vo

b)

Io vs Vip

c)

Io vs Vip

18.

Dynamic characteristics nothing but

a)

static

b)

switching

c)

both

d)

None of the above

19.

Switching chara of MOSFET is

a)

Ton= td+ tr; Toff= tdf+tf

b)

Ton= td+ tr+tp; Toff= tdf+tf

c)

Ton= td+ tr; Toff= tdf+tf+tf2

d)

Ton= td+ tr; Toff= tdf+tf+tp

20.

Switching chara. of IGBT is

a)

Ton= td+ tr; Toff= tdf+tf1+tf2

b)

Ton= td+ tr+tp; Toff= tdf+tf

c)

Ton= td+ tr+tf; Toff= tdf+tf

d)

None of the above