NEW
Font size
WorksheetsVLSI_Q1
Total questions: 10
Worksheet time: 5mins
_______ is the photoresist which is initially soluble and becomes insoluble when exposed to UV light
Positive photo resist
Negative photo resist
chrome
reticle
In fabrication ___________is the process of building wires to connect the devices.
Metallization
Sputtering
Routing
Passivation
If β = [(W/L)P/(W/L)N] is increased, which of the following statement is true
TpHL>TpLH
TpHL<TpLH
TpHL=TpLH
No change in delay
For a static CMOS, the output is high, then the state of the NMOS and PMOS are as follows
NMOS off and PMOS linear
NMOS off and PMOS non-linear
NMOS on and PMOS non-linear
NMOS on and PMOS linear
For a static CMOS inverter, when the aspect ratio of the pull down network is increased,
then which of the following statement is true
TpHL increases
NML increases
NMH increases
TPLH increases
For a bulk MOSFET with aspect ratio of W/L and a depletion width of XD the analytical expression for gate-to-drain overlap capacitance (Cgd) is____
Cgd = CoxXDWL
Cgd = CoxXDW/2
Cgd = 2CoxXDWL
Cgd = 2CoxWXD
In stick diagram, n and p transistors are separated by using ____________
Diffusion
Demarcation line
N well
PR boundary
AOI realization is suitable for realizing functions in _____ form
sop
Pos
CVSL
Pseudo NMOS
The static PD for CMOS logic is maximum when input is at
vdd
vdd/2
vdd/4
2vdd
------------------- can pass a logic 1 perfectly, but cannot pass a logic 0 perfectly
nmos
Transmission gate
pmos
keepers
