WorksheetsSemiconductors and Diodes
Total questions: 35
Worksheet time: 25mins
Materials which can conduct electricity better than insulator,but not as well as conductors. This is the definition of
diode
semiconductor
conductor
insulator
superconductor
Which is not one of the properties of semiconductor?
4 electrons in outermost orbit, in covalent bonding.
Valence Band and Conduction Band overlap each other.
Electron gets free leaves hole.
Semiconductor has 2 types of charge carriers.
Choose the option that is not for the Trivalent impurities:
•3 valence electrons
•produce p-type semiconductors
•producing a "hole".
Antimony, arsenic, and phosphorus are the examples
The characteristics of p-type semiconductors is includes
Majority carriers are electron
Has tendency to gain electron
Has tendency to donate electron
The process of adding an impurity to an intrinsic semiconductor is called
Doping
Ionization
Recombination
Atomic modification
What is the most common semiconductor material used for producing integrated circuits
Quartz
Silicon
Diamond
Tantalum
Doping of Semiconductors
materials which can conduct electricity better than insulator, but not as well as conductors.
The process of adding of a certain amount of specific impurities atoms in the pure semiconductor.
when 4 electrons in outermost orbit.
Which of the following statements is NOT the diode application in electronic circuit?
Diode as voltage regulator
Diode as Rectifier
Diode as Amplifier
Basic building blocks of all electronic circuits are
Devices in which there is a flow of electrons
devices in which there is no flow of electrons
devices in which there is a controlled flow of electrons
devices in which there is an uncontrolled flow of electrons
Let np and ne be the number density of holes and conduction electrons respectively in a semiconductor. Then,
np > ne in an intrinsic semiconductor, I < Ip + Ie
np = ne in an extrinsic semiconductor, I > Ip + Ie
np = ne in an intrinsic semiconductor, I = Ip + Ie
np > ne in an intrinsic semiconductor, I = 0( Here, Ip = current due to holes,Ie= current due to electrons, I= total current)
During formation of p-n junction
an electron diffuses from n to p side
a hole diffuses from p to n side
a hole diffuses from n to p side
an electron diffuses from p to n side
The electric current produced due to the steady flow of electrons in one direction is called
Drift current
Diffusion Current
The forbidden energy gap for Silicon is of the order of
0.7 eV
0.3 eV
1.1 eV
10 eV
Who contribute to the current in a semiconductor
electrons only
holes only
negative ions
both electrons and holes
The current due to result of difference of carrier concentration from one region to another region is called?
Drift Current
Diffusion Current
If fermi levels is at mid of valence band and conduction band at absolute zero temperature then the material is:
Conductor
semiconductor
insulator
none of the above
The majority charge carriers in N- Type semiconductor is:
Hole
Electron
The voltage at which the PN junctions breaks down and forward current suddenly start flowing is called:
Reverse breakdown voltage
Cut- in Voltage
Peak inverse Voltage
The maximum reverse voltage that can be applied to PN junction without damge to the junction is called (a)
The semiconductors have (a) temperature coefficient of resistance.
The Knee Voltage in the case of Germanium is (a)
When an atom donates one of its valence electron, then it becomes
Positive Immobile ion
Negative Immobile Ion
Region containing uncompensated ions is depleted of charge carriers and thus known as.....
Depletion region
Potential Barrier
Transition Region
All of the above
The small amount of current that flows in reversed biased diode before breakdown is called?
Reverse Saturation Current
Leakage Current
Forward Current
The diode with High level of Doping is called........?
PN Diode
Zener Diode
None of the above
In reversed biased diode the depletion region acts like an insulator while P- and N - type regions on either sides acts like plates of capacitor, then the junction capacitance formed is called............?
Diffusion Capacitance CD
Depletion Region or Transition Capacitance CT.
In forward biased diode Diffusion capacitance is much larger than Transition Capacitance.
True
False
1. Heavily doped diode.
2. Thin depletion region.
3. Sharp break down voltage
All these are characteristics of which diode?
PN diode
Zener Diode
Reversed biased diode
The breakdown which occurs due to Collision in Charge Carriers is called:
Zener Breakdown
Avalanche Breakdown
The brakdown that occurs due to Ionization by an Electric Field below reverse voltage of even 5 volt is called:
Avalanche Breakdown
Zener Breakdown
In the image the diode is:
Forward biased
Reversed biased
Not biased
