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WorksheetsField Effect Transistor
Total questions: 30
Worksheet time: 30mins
The quantity that express how bigger is the output voltage relating to the input voltage is called
Voltage Gain
Amplification Factor
Input Resistance
Output resistance
Which of the following is not a terminal of an FET device?
Base
Gate
Drain
Source
A JFET is a ………… driven device
voltage
current
both current and voltage
none of the above
A JFET is also called …………… transistor
bipolar
unipolar
unijunction
none of the above
The gate of a JFET is ………… biased
forward
reverse
reverse as well as forward
none of the above
The input impedance of a JFET is …………. that of an ordinary transistor
equal to
more than
less than
none of the above
In a p-channel JFET, the charge carriers are …………..
electrons
holes
both electrons and holes
none of the above
If the reverse bias on the gate of a JFET is increased, then width of the conducting channel …………..
is increased
is decreased
remains the same
none of the above
A JFET has ……….. power gain
small
very high
very small
none of the above
The input control parameter of a JFET is ……………
gate current
drain voltage
gate voltage
source voltage
In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers ………
have large gap
have moderate gap
almost touch each other
none of the above
In a JFET, IDSS is known as …………..
drain to source current with gate open
drain to source current with gate shorted
drain to source current
none of the above
The two important advantages of a JFET are …………..
inexpensive and high output impedance
low input impedance and high output impedance
high input impedance and square-law property
none of the above
The gate voltage in a JFET at which drain current becomes zero is called ……….. voltage
cut-off
active
saturation
pinch-off
The channel of a JFET is between the …………….
input and output
gate and source
drain and source
gate and drain
At cut-off, the JFET channel is ……….
reverse baised
extremely narrow
at its widest point
completely closed by the depletion region
When an input signal reduces the channel size, the process is called …….
substrate connecting
gate charge
depletion
enhancement
The electrons flow through a p-channel JFET from ……….. to …………..
from drain to source
from drain to gate
from source to gate
from source to drain
The constant-current region of a JFET lies between
pinch-off and breakdown
cut off and pinch-off
cut off and saturation
o and IDSS
With a JFET, a ratio of output current change against an input voltage change is called as ………..
resistivity
gain
siemens
transconductance
FET is a three-terminal device which uses ________ to control the flow of current through the device
electric field
magnetic field
hole
electron
This symbol is for
MOSFET-D type
JFET-n channel
JFET-p channel
MOSFET-E type
These symbols represent
(a) D-mode n channel MOSFET (b) D-mode p channel MOSFET
(a) D-mode n channel MOSFET (b) E-mode p channel MOSFET
(a) D-mode p channel MOSFET (b) D-mode n channel MOSFET
(a) E-mode n channel MOSFET (b) E-mode p channel MOSFET
This symbol shows
n channel E-mode MOSFET
n channel D-mode MOSFET
p channel E-mode MOSFET
p channel D-mode MOSFET
Figure shows transfer characteristics of JFET. The pinch-off voltage Vp will be...
12 mA
47 mA
+4 Volts
-4 Volts
Enhancement mode MOSFETs are more commonly used as
switches
resistors
buffers
capacitors
Depletion mode MOSFETs are more commonly used as
switches
resistors
buffers
capacitors
A MOSFET can be operated with ……………..
Negative gate voltage only
Positive gate voltage only
Positive as well as negative gate voltage
None of the above
MOSFET is also known as….
IGBJT
IGFET
IGBET
None
The output characteristics of a MOSFET, is a plot of
ID as a function of VGS with VDS as a parameter
ID as a function of VDS with VGS as a parameter
IG as a function of VGS with VDS as a parameter
IG as a function of VDS with VGS as a parameter
