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UNIT II Quiz

Total questions: 20

Worksheet time: 10mins

Name
Class
Date
1.
In an NPN transistor, the N regions are
a)
base and emitter
b)
base and collector
c)
emitter and collector
d)
base and ground
2.
The heavily doped region of a BJT
a)
collector
b)
base
c)
emitter
d)
common
3.
The region of a BJT that is lightly doped and very thin compared to other two regions
a)
base
b)
emitter
c)
collector
d)
common
4.
The transistor's region of operation when base current is equal to zero
a)
cutoff
b)
saturation
c)
breakdown
d)
active
5.
The region of operation of a transistor where base-emitter junction has a low resistance due to forward bias and the base-collector junction has a high resistance due to reverse bias
a)
cutoff
b)
saturation
c)
breakdown
d)
active or linear
6.
Which of the following is not a terminal or region of a BJT?
a)
base
b)
collector
c)
drain
d)
emitter
7.

The oxide layer formed in the MOSFET is

a)

Metal oxide

b)

Silicon dioxide

c)

Poly Silicon oxide

d)

Oxides of Non metals

8.

Which of the following terminals does not belong to the MOSFET?

a)

Drain

b)

Gate

c)

Base

d)

Source

9.

The drain current (n-MOSFET) is varied by

a)

Gate to source voltage

b)

Gate current

c)

Source Voltage

d)

None of the mentioned

10.

The controlling parameter in MOSFET is

a)

Vds

b)

Ig

c)

Vgs

d)

Is

11.

Choose the correct statement

a)

MOSFET is a unipolar, voltage controlled, two terminal device

b)

MOSFET is a bipolar, current controlled, three terminal device

c)

MOSFET is a unipolar, voltage controlled, three terminal device

d)

MOSFET is a bipolar, current controlled, two terminal device

12.

MOSFET has greatest application in digital circuit due to

a)

Low power consumption

b)

Less noise

c)

Small amount of space it takes on a chip

d)

All of the above

13.

1. The MOSFET stands for.....

a)

Metal oxidized selenium FET

b)

Metal oxide surface FET

c)

Metal oxide semiconductor FET

d)

Metal of surface FET

14.

MOSFET is also known as….

a)

IGBJT

b)

IGFET

c)

IGBET

d)

None

15.

………… is the best electronic device for fast switching.

a)

MOSFET

b)

JFET

c)

BJT

d)

Triode

16.

Enhancement mode MOSFETs are more commonly used as

a)

switches

b)

resistors

c)

buffers

d)

capacitors

17.

Depletion mode MOSFETs are more commonly used as

a)

switches

b)

resistors

c)

buffers

d)

capacitors

18.

For an n-channel FET, What is the direction of current flow?

a)

Source to drain

b)

Drain to source

c)

Gate to source

d)

Gate to drain

19.

A JFET has three terminals, namely …………

a)

cathode, anode, grid

b)

emitter, base, collector

c)

source, gate, drain

d)

none of the above

20.

A JFET is a ………… driven device.

a)

current

b)

voltage

c)

both current and voltage

d)

none of the above

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