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ASIC DESIGN QUIZ 1

Total questions: 50

Worksheet time: 25mins

Name
Class
Date
1.

When NMOS gate is connected to +ve

a)

channel will be formed

b)

starts to conduct

c)

starts to burn

d)

none of the above

2.

Choose the semi custom ASIC

a)

channeled gate arry

b)

FPGA

c)

PLD

d)

all the above

3.

The VLSI design flow starts with:

a)

RTL synthesis

b)

Product specifications

c)

Library mapping

4.

What is the criterion of full custom design?

a)

programmed by user

b)

not required mask design

c)

all mask design is new without use library

5.

MOS transistor structure is ____________


a)

a) symmetrical

b)

b) non symmetrical

c)

c) semi symmetrical

d)

d) pseudo symmetrical

6.

Which is used for the interconnection from source and drain in nMOS or pMOS ?



a)

a) boron

b)

b) oxygen

c)

c) aluminium

d)

d) silicon

7.

In a CARRY LOOK AHAEAD ADDER, carry generate (G)and carry propagate functions (P) can be realized by using

a)

OR and AND gates respectively

b)

AND and XOR gates respectively

c)

NAND and NOR gates respectively

d)

XOR and XNOR gates respectively

8.

The IC package pins can be directly soldered on the PCB; this method is called

a)

surface-mounted technology

b)

surface-mounted technique

c)

surface-module technology

d)

surface-mounted technique

9.
In which design all circuitry and all interconnections are designed?
a)
full custom design
b)
semi-custom design
c)
gate array design
d)
transistor design
10.
The condition for non saturated region is
a)
Vds = Vgs – Vt
b)
Vgs lesser than Vt
c)
Vds lesser than Vgs – Vt
d)
Vds greater than Vgs – Vt
11.
The size of a transistor is usually defined in terms of its
a)
channel length
b)
feature size
c)
width
d)
thickness ‘d’
12.

The capacitances in MOSFET occurs due to:

a)

Interconnects

b)

Difference in Doping concentration

c)

Difference in dopant materials

d)

All of the mentioned

13.
The parasitic capacitances found in MOSFET are:
a)
Oxide related capacitances
b)
Inter electrode capacitance
c)
Electrolytic capacitance
d)
All of the mentioned
14.
In Cut-off Mode, the capacitance Cgs will be equal to:
a)
2Cgd
b)
0
c)
Cgb
d)
All of the mentioned
15.
When MOSFET is operating in saturation region, the gate to source capacitance is :
a)
1/2*Cox*W*L
b)
2/3*Cox*W*L
c)
Cox*W*L
d)
1/3*Cox*W*L
16.

Intel currently has a CMOS technology process in which  λ \lambda\   = 11 nm. What is the minimum size of the transistor?

a)

11 nm

b)

22 nm

c)

33 nm

d)

44 nm

17.

Which design contains only the interconnections designed?

a)

full custom design

b)

semi-custom design

c)

gate array design

d)

transistor design

18.

Xilinx based FPGA device are

a)

RAM based

b)

Non-Volatile EPROM based

c)

Fuse- based

d)

Array based

19.

Xilinx XC3000 CLB includes

a)

16 bit look up table

b)

32 bit look up table

c)

6 inputs to CLB

d)

Propagation delay is variable

20.

Density of FPGA includes

a)

Upto 10 million gates

b)

Upto 1 million gates

c)

Upto 10000 gates

d)

Upto 1 lakh gates

21.

Which company fabricated the first IC?

a)

Intel

b)

Fairchild

c)

Google

d)

Microsoft

22.

……………. cannot be fabricated on an IC

a)

Resistors

b)

Diodes

c)

Transistors

d)

Inductors and Capacitors

23.

The main differences between FPGA and ASIC is/are

a)

The interconnects in FPGA are reconfigurable

b)

Area, speed and power of ASIC are optimized.

c)

For the similar digital designs, the speed and power consumption in ASIC are usually less.

d)

FPGA Based design occupies more area than ASIC-Based design

24.

SRAM -based devices are better than Antifuse -Based devices for military and aerospace applications

a)

True

b)

False

25.

The difference between FPGA and PLD is that __________

a)

FPGA is slower than PLD

b)

FPGA has high power dissipation

c)

FPGA incorporates logic blocks

d)

All of the Mentioned

26.

The inputs in the PLD is given through ____________

a)

NAND gates

b)

OR gates

c)

NOR gates

d)

AND gates

27.

Size of the die is determined using

a)

transistor size

b)

inverter size

c)

area of the circuitry

d)

length of the circuitry

28.

Hold time is defined as the time required for the data to ________ after the triggering edge of clock

a)

Increase

b)

Decrease

c)

Remain stable

d)

All of the above

29.

An Antifuse programming technology is predominantly associated with _____.

a)

PLDs

b)

FPGAs

c)

CPLDs

d)

All of the above

30.

If the level of fan-out is beyond a limit in synthesis, it results in an insertion of buffer by ultimate effect of _____ the speed.

a)

Enhancing

b)

Reducing

c)

Stabilizing

d)

None of the above

31.

The devices which are based on fusible link or antifuse are _________time/s programmable.

a)

One

b)

Two

c)

Four

d)

Infinite

32.

In floorplanning, which phase/s play/s a crucial role in minimizing the ASIC area and the interconnection density?

a)

Placement

b)

Global routing

c)

Detailed routing

d)

All of the above

33.

An antifuse element initial provides ______ between two conductors in absence of the application of sufficient programming voltage.

a)

Conduction

b)

Insulation

c)

Both A and B

d)

None of the above

34.

In a chip, which type/s of pad design/s is/are adopted to solve the problem of pin count?

a)

Input pad design

b)

Output pad design

c)

Three state pad design

d)

All of the above

35.

In CMOS circuits, which type of power dissipation occurs due to switching of transient current and charging & discharging of load capacitance?

a)

Static dissipation

b)

Dynamic dissipation

c)

Both a and b

d)

None of the above

36.

Which factor/s play/s a crucial role in determining the speed of CMOS logic gate?

a)

Gain factor of MOS

b)

Load capacitance

c)

Power supply

d)

All of the above

37.

The ratio of PMOS and NOS transistor size of an inverter is___

a)

1/1

b)

2/1

c)

4/1

d)

1/2

38.

Altera FPGAs use ____ programming technology.

a)

EPROM

b)

Anti-fuse

c)

SRAM

d)

DRAM

39.

Actel FPGA uses _______ for programming.

a)

Fuses

b)

Anti-fuses

c)

EPROM

d)

SRAM

40.

Compared to FPGA, ASIC consumes______power and _____.

a)

low,faster

b)

high,faster

c)

high,slower

d)

low,slow

41.

In floorplanning, placement and routing are __________ tools.

a)

Front end

b)

Back end

c)

Both a and b

d)

None

42.

Which among the following is/are not suitable for in-system programming?

a)

EPROM

b)

EEPROM

c)

Flash

d)

All of the above

43.

In enhancement MOSFET, the magnitude of output current __________ due to an increase in the magnitude of gate potentials.

a)

increases

b)

decreases

c)

remains constant

d)

none of the above

44.

FPGA is a

a)

full-custom ASIC

b)

semi-custom ASIC

c)

programmable ASIC

d)

structured ASIC

45.

CLBs are used in

a)

gate array design style

b)

standard cell based design

c)

Field programmable gate array layout

d)

full custom design

46.

Channelless Gate array is a sub-type of

a)

FPGA

b)

PLD

c)

ASIC

d)

Microprocessor

47.

________is a programmable ASIC

a)

Cell based ASIC

b)

Full custom ASIC

c)

Field programmable Gate array based ASIC

d)

Structured Gate Array based ASIC

48.

Compared to FPGA, ASIC takes _______ time to market.

a)

short

b)

medium

c)

large

d)

flexible

49.

Logic Modules are used in ________FPGA

a)

Altera

b)

Actel

c)

XIlinx

d)

All of the above

50.

Shannon's expansion theorem is applied to ________ logic function in _______ FPGAs

a)

reduce,Altera

b)

expand,Actel

c)

expand,Altera

d)

reduce,Actel