WorksheetsBE module4
Total questions: 25
Worksheet time: 18mins
(a) is a semiconductor device used to amplify or switch electronic signals
BJT has (a) number of terminals
full form of BJT
Bipolar Junction Transistor
Bipolar Junction Transformer
Bilateral Junction Transfer
Bilateral Junction Transformer
The image shows ....transistor
NPN
PNP
In a BJT, thickest region is
emitter
collector
base
In a BJT, which region is heavily doped
emitter
base
collector
which region is lightly doped and thin?
base
emitter
collector
ΔIe/ΔIb=
α
β
γ
ΔIc/ΔIb =
α
β
γ
which is true? γ =
1+β
1−β
1+ββ
which is true? α=
1+β
β(1+β)
1+ββ
which is true? β =
1−αα
1+αα
α(1−α)
point a is in .....region
active
cutoff
saturation
point b is in .....region
active
cutoff
saturation
point c is in .....region
active
cutoff
saturation
curve shown is ....................charcteristic of BJT
transfer
input
output
curve shown is ....................charcteristic of BJT
transfer
input
output
which region of BJT is used in amplifier?
active
cutoff
saturation
which regions of BJT is used in switch?
active
cutoff
saturation
which configuration has high input resistance?
common collector
common base
common emitter
which configuration is generally used for amplifier?
CE
CC
CB
configuration shown is...
CE
CB
CC
which configuration has highest output resistance?
CB
CC
CE
transistor has (a) number of pn junctions
for a CE configuration, ratio of change in base emitter
voltage (Vbe) to the resulting change in base current (Ib) at
constant collector-emitter voltage (Vce) is called.....
input resistance
output resistance
gain
