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WorksheetsVLSI Fabrication - Quiz 1
Total questions: 10
Worksheet time: 20mins
An ________________ has a much greater depth of focus than an ________________ lithographic system.
Optical beam, Electron
Optical beam, X-ray
Electron beam, Optical
Electron beam, X-ray
The problem with _______________ lithographic machines is that they are slow.
Electron-beam
Optical
X-ray
Infrared
The throughput of _______________ is approximately only five wafers per hour at less than 1 µm
resolution.
Electron-beam Lithography
Optical Lithography
X-ray Lithography
Infrared Lithography
What are the factors that differentiate the E-beam with photo-lithography?
Speed
Exposure
Diffraction limits
All of the above
What is the energy spread in e-beam lithography with a source type of tungsten?
1 eV
2-3 eV
5-6 eV
4 eV
A chemical sprinkled on the film using a machine is called _____ etching.
Over etching
Wet etching
Spray etching
None of the above
Which of the following is not one of an etching parameter for wet etching process?
Concentration of the etchant
Time
Ordered
Temperature
Ion beam has a _____ than e-beam lithography.
Smaller wavelength
Larger wavelength
High diffraction
None of the above
Photoresist residue from previous photo-lithography can be minimized by performing ________________.
Clean room practice
Laser scribing
Oxygen plasma ashing
All of the above
Which of the following are advantages of using Electron-beam fabrication?
Resist geometries smaller than 1 µm can be generated.
Wafers can be patterned directly without a mask.
The technique can be highly automated
All of the above
