WorksheetsSemiconductor Devices Quiz 1
Total questions: 40
Worksheet time: 31mins
The region on either side of the junction which becomes free from the mobile charge carriers is called
Energy gap region
Charge free region
Diffusion region
Depletion region
Characteristics of a diode that helps in rectification
Allows Unidirectional flow of current
Allows Bidirectional flow of current
Opposes the flow of current
conducts in reverse biased
Diode has polarity
anode and cathode
on and off
output and input
none of the above
which statement is correct? (the dark circles represent the electrons)
p-type of the diode is connected to the negative terminal.
Electron moves across the p-n junction, makes the diode forward biased
current will not flow in the circuit
reverse biased circuit
The forbiddenn energy gap for Germanium is of the order of
0.7 eV
0.3 eV
1.1 eV
10 eV
The process of adding an impurity to an intrinsic semiconductor is called
Doping
Ionization
Recombination
Atomic modification
The VI
Characteristics of the diode lie in the
1st
& 2nd quadrant
1st
& 3rd quadrant
1st
& 4th quadrant
Only in
the 1st quadrant
Materials which can conduct electricity better than insulator,but not as well as conductors. This is the definition of
diode
semiconductor
conductor
insulator
superconductor
Which of the following is a symbol of NPN transistor ?
A transistor is said to be in active region, when
BE junction forward biased and BC junction reversed biased
BE junction forward biased and BC junction forward biased
BE junction reverse biased and BC junction reversed biased
none of above
What are the three terminals in a FET transistor?
gate, source, drain
base, emitter, collector
gate, base, drain
source, drain, collector
The breakdown in a reverse biased p-n junction diode is more likely to occur due to
large velocity of the minority charge carriers if the doping concentration is small
large velocity of the minority charge carriers if the doping concentration is large
strong electric field in a depletion region if the doping concentration is small
none of these
Zener diodes are also known as
Voltage regulators
Forward bias diode
Breakdown diode
None of the mentioned
The depletion region of the Zener diode is ____________
No depletion layer
Normal
Very Thin
Very thick
Zener diode is operated in which of the following bias condition
forward bias
reverse bias
open circuited
unbiased
Avalanche breakdown mainely occurs due to a factor called....
applied E-field
collisions of charge carriers
thermal energy
equilibrium conditions
What is the purpose of the resistor, R in this circuit?
To increase the potential difference across diode, D.
To limit the current flowing through diode, D.
To increase the current flowing through diode, D.
To decrease the potential difference across diode, D.
What are the 3 legs of a transistor called?
Base, Electrode, Commiter
Bridge, Collector, Extruder
Base, Collector, Emitter
Brake, Collection, Emit
In a Transistor ………………..
IE = IC + IB
IC = IE + IB
IE = IC – IB
IB = IC + IE
In which circuit does the bulb light up?
What are the names of the terminals X, Y and Z?
X = Base, Y = Collector, Z = Emitter
X = Emitter, Y = Base, Z = Collector
X = Collector, Y = Base, Z = Emitter
X = Collector, Y = Emitter, Z = Base
A transistor is a …………… operated device
Voltage
Both Voltage and Current
Current
None of the Above
Amplifier circuit will be in which configuration
CE
CB
CC
None
In a NPN Transistor, the current carriers are ………….
Acceptor Ions
Donor Ions
Free Electrons
Holes
Main phenomenons associated with formation of p-n junctions are
Drift only
Diffusion only
Diffusion and Drift
only doping
For a BJT, for common base configuration the input characteristics are represented by a plot between which of the following parameters?
VBE and IE
VBE and IB
VCC and IC
VCC and IC
Which of the following correctly determines the relation between α and β?
α=β/(1-α)
β=α/(1-α)
β=α/(1-β)
β=α*(1-β)
using the figure decide, what is the BJT amplifier configurations:
Common Base amplifier
Common Emitter amplifier
Common Collector amplifier
A certain transistor has IC = 15 mA and IB = 167 µA; β is
15
167
0.011
90
What is the order of doping, from heavily to lightly doped, for each region?
base, collector, emitter
emitter, collector, base
emitter, base, collector
collector, emitter, base
Define ACTIVE REGION :
B-E junction reverse biased
C-B junction is forward biased
B-E junction forward biased
C-B junction is reverse biased
C-E junction reverse biased
C-B junction is forward biased
B-C junction forward biased
B-E junction is reverse biased
Calculate the total current when Ipn (0)=1mA and Inp (0)=2mA.a) 1mA
a) 1mA
b) -1mA
c) 0
d) 3mA
What does Inp represent?
Hole current in n region
Hole current in p region Electron current in p region
Electron current in n region
Electron current in p region
A transistor has an IC of 100mA and IB of 0.5mA. What is the value of αdc?
0.565
0.754
1.24
0.995
Field effect transistor is a _______ controlled device
Current
Inductance
Voltage
Resistance
A transistor is connected in CB configuration. The emitter voltage is changed by 200mV, the emitter by 5mA. During this transition the collector base voltage is kept constant. What is the input dynamic resistance?
30Ω
60Ω
40Ω
50Ω
The input resistance is CE configuration is given by _________
∆VCE/∆IB
∆VBE/∆IB
∆VBE/∆IC
∆VBE/∆IE
