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Power Electronics

Total questions: 50

Worksheet time: 59mins

Name
Class
Date
1.
Material that electricity can easily flow through
a)
Insulators
b)
Rubber
c)
Conductor
d)
Wood
2.
Identify the Converter type?
a)
1Φ Dual Converter
b)
3Φ Single Converter
c)
3Φ Dual Converter
d)
1Φ Single Converter
3.
A fully controlled converter uses
a)
 diodes only
b)
 thyristors only
c)
 both diodes and thyristors
d)
Noe of them
4.
For an SCR in the forward blocking mode (practically)
a)
leakage current does not flow
b)
leakage current flows from anode to cathode
c)
leakage current flows from cathode to anode
d)
leakage current flows from gate to anode
5.
 A dual converters has
a)
 two full converters in series
b)
 two half converters in series
c)
two full converters in anti-parallel
d)
two half converters in anti-parallel
6.
 The shape of the output voltage waveform in a single PWM is
a)
 square wave
b)
triangular wave
c)
quasi-square wave
d)
sine wave
7.
dv/dt protection is provided to the SCR by
a)
connecting a capacitor in parallel with the load
b)
connecting an inductor in series with the load
c)
connecting a capacitor & resister in parallel with the device
d)
connecting an inductor & resister in parallel with the device
8.
The time constant of a series RC circuit (τ) is given by
a)
R/C
b)
C/R
c)
RC
d)
1/RC
9.

Gate of MOSFET is insulated with layer of...?

a)

SiO2

b)

O2

c)

Si

d)

None

10.

PWM in voltage source inverter can control ----------------------- of the voltage output ?

a)

Frequency

b)

Magnitude

c)

Both Frequency & Magnitude

d)

None

11.

Static UPS requires...?

a)

Only Rectifier

b)

Only Inverter

c)

Both Rectifier & Inverter

d)

None

12.

Which device can be used in a chopper circuit?

a)

GTO

b)

IGBT

c)

MOSFET

d)

ALL

13.

Which device can be used in a chopper circuit?

a)

GTO

b)

IGBT

c)

MOSFET

d)

ALL

14.

Which device can be used in a chopper circuit?

a)

GTO

b)

IGBT

c)

MOSFET

d)

ALL

15.

1) In a BJT

a)

A. The base region is sandwiched between emitter and collector

b)

B. The collector is sandwiched between base and emitter

c)

C. The emitter region is sandwiched between base and collector

d)

D. None of the above

16.

2) A transistor has …………………

a)

A. one pn junction

b)

B. two pn junctions

c)

C. three pn junctions

d)

D. four pn junctions

17.

3) In a npn transistor, ……………. are the minority carriers

a)

A. free electrons

b)

B. holes

c)

C. donor ions

d)

D.acceptor ions

18.

4) A Triac has three terminals viz ………………

a)

A. Drain, source, gate

b)

B. Two main terminal and a gate terminal

c)

C. Cathode, anode, gate

d)

D. None of the above

19.

5) A DIAC has three terminals viz ………………

a)

A. Drain, source, gate

b)

B. Two main terminal

c)

C. Cathode, anode, gate

d)

D. None of the above

20.

6) The device that does not have the gate terminal is ……………….

a)

A. Triac

b)

B. FET

c)

C. SCR

d)

D. Diac

21.

9) An SCR has three terminals viz ……………

a)

A. Cathode, anode, gate

b)

B. Anode, cathode, grid

c)

C. Anode, cathode, drain

d)

D.None of the above

22.

1) The Main Difference between SCR and SCS in?

a)

a)Gate Terminal

b)

b)Anode Terminal

c)

c)Cathode Terminal

d)

d)Base Terminal

23.

2) Sometimes TRIAC also called ?

a)

a) Triggering unijunction Thyristor

b)

b) Triggering bi-directional Thyristor

c)

c) DIAC

d)

d) None of these

24.

3) The difference between TRAIC and SCR is?

a)

a) Anode

b)

b) Cathode

c)

c) Polarity of gate triggering signals

d)

d) Collector Terminal

25.

4) FET control?

a)

a) Voltage

b)

b) Current

c)

c) Greater Thermal Stability

d)

d) Both B and C

26.

5) IGBT is the second most widely used device after?

a)

a) SCR

b)

b) Diode

c)

c) BJT

d)

d) MOSFET

27.

6) Diode pass ......... in one direction?

a)

a) Voltage

b)

b) Current

c)

c) Both

d)

d) None of these

28.

7) Amplifiers and oscillators using BJT, operate in ...... region

a)

A.Inverted mode

b)

B.Active

c)

C.Cut off

d)

D.Saturation

29.

8) A triac is a ..... switch

a)

A.Unidirectional

b)

B.Bi-directional

c)

C.Either of the above

d)

D.None of the above

30.

9) MOSFET has greatest application in digital circuit due to

a)

A.Low power consumption

b)

B.Less noise

c)

C.Small amount of space it takes on a chip

d)

D.All of the above

31.

Power converters can change one form of power to another form of power using semiconductor power devices.

a)

True

b)

False

32.

To allow power conversion, we can arrange all power switches in the converter freely.

a)

True

b)

False

33.

How many directions can a semiconductor power switch conduct electric current?

a)

1

b)

2

c)

3

d)

4

34.

In general, only ideal power switches generating power losses during their operation.

a)

True

b)

False

35.

What is the name of power loss of a semiconductor device that occurs during the on-state?

a)

Blocking state power loss

b)

Forward conduction power loss

c)

Switching power loss

d)

None the above answers

36.

The main function of power switches during off-state is to _____ forward and reverse voltage.

a)

allow

b)

block

c)

conduct

d)

stop

37.

The main function of power switches during on-state is to _____ forward current.

a)

allow

b)

block

c)

conduct

d)

stop

38.

All semiconductor power devices require a gate signal to initiate current conduction.

a)

True

b)

False

39.

Which power switch needs a continuous control signal to remain turn-on?

a)

Diode

b)

Transistor

c)

Thyristor

40.

We can measure the leakage current of a power switch when it is turned _____ and the voltage drop during turned _____.

a)

off, off

b)

off, on

c)

on, off

d)

on, on

41.
[3 minutes] Fill in the blank .
Power Electronics  circuits involve______________ from one form to another using power semiconductor devices  (1 mark)
a)
converting mechanical power
b)
transfer heat
c)
converting electrical power
d)
converting electromagnetic field
42.
[3 minutes] Application of power electronics in static system is...... (2 marks)
a)
to convert electrical charge for supplying load demand or for Power Quality (PQ) improvement.
b)
to convert electrical power for supplying load demand or for Power Quality (PQ) improvement.
c)
to manipulate certain parameter for controlling the weight of motors.
d)
to manipulate certain parameter for controlling the speed of motors.
43.
[3 minutes] How to increase the current conducting capability of diode? (1 mark)
a)
connect several diodes in parallel
b)
connect several diodes in series
44.
[3 minutes] The current gain, β of BJT is given by the expression (1 mark)
a)
IC/IB
b)
IC/IE
c)
IB/IC
d)
IE/IG
45.
[3 minutes] The controlling parameter in MOSFET is the......(1 mark)
a)
IG
b)
VGS
c)
ID
d)
VGE
46.
[3 minutes] Which of the following statement is correct for an SCR operating in REVERSE BLOCKING MODE - practical condition (1 mark)
a)
leakage current flows from anode to cathode
b)
no leakage current
c)
leakage current flows from cathode to gate
d)
leakage current flows from cathode to anode
47.
[3 minutes] Three types of common  power transistor are.....(1 mark)
a)
Diode, Triac and IGBT
b)
BJT, MOSFET and IGBT
c)
Diode, IGBT and GTO
d)
GTO, MOSFET and IGBT
48.
[5 minutes] A single-phase half-wave type diode rectifier requires __________ number of diode(s) whereas full wave type requires _________ number of diode(s) (2 mark)
a)
4, 1
b)
1, 4
c)
1, 3
d)
3, 4
49.
[5 minutes] For a certain diode based rectifier, the output voltage (average value) is given by the equation 1/2π ∫Vm sin (ωt) dωt ; where the integral (∫) runs from 0 to π. The rectifier configuration must be that of a.... (2 marks)
a)
single phase controlled full wave with R load
b)
single phase uncontrolled full wave with R load
c)
single phase uncontrolled half wave with RL load
d)
single phase uncontrolled half wave with R load
50.
[5 minutes] A single-phase full wave rectifier is a..... (2 marks)
a)
multiple pulse rectifier
b)
single pulse rectifier
c)
two pulse rectifier
d)
three pulse rectifier

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