ELECTRONICS

Three regions of BJT are:

• Emitter, Collector, and Gate

• Emitter, Base and Collector

• Emitter, Gate, and Source

• Source, Drain, and Collector

The region which is lightly doped in BJT is

• Base

• Collector

• Emitter

• Any of above

The region which is heavily doped:

• Base

• Collector

• Emitter

• Any of above

In a transistor IC = Ic mA and IE = Ie mA. The value of β is:

• 50

• 100

• 150

• 200

The transistor is a ____________ operated device:

• Voltage

• Current

• Both of these

• None of these

Which of the following is the correct bias arrangement for a BJT if it is to be operated as an amplifier:

• Both Base emitter junction and Base-collector junction are reverse biased

• Both Base emitter junction and Base-collector junction are forward biased

• Base emitter junction is reverse biased and Base-collector junction is forward biased

• Base emitter junction is forward biased and Base-collector junction is reverse biased

What is the value of collector current when the base resistor is open

• 0 mA

• 0.7 mA

• 1.5 mA

• Infinity

The break down voltage of a transistor with its base open is BVCEO and that with emitter open is BVCBO, then

• BVCEO = BVCBO

• BVCEO > BVCBO

• BVCEO < BVCBO

• BVCEO is not related to BVCBO

A BJT is said to be operating in the saturation region if

• Both junctions are reverse biased

• Base – emitter junction is reverse biased and base collector junction is forward biased

• Base – emitter junction is forward biased and base – collector junction reverse biased

• Both the junctions are forward biased

The Ebers – Moll model is applicable to

• Bipolar junction transistors

• NMOS transistors

• Unipolar junction transistors

• Junction field – effect transistors