CHAPTER 5 - OPERATION OF THE MOSFET

What is the threshold voltage (V_TH) of a MOSFET?

• The voltage at which the MOSFET switches from off to on state
• The voltage at which the MOSFET starts consuming power
• The voltage at which the MOSFET starts generating heat

When a MOSFET operates in the triode region, which of the following conditions is correct?

• V_DS > V_GS - V_TH
• V_DS < V_GS - V_TH
• V_GS < V_TH
• V_GS > V_TH

What is the overlap capacitance between the G-D and G-S terminals in a MOSFET?

• C_gs and C_gd
• C_gb and C_sb
• C_gd and C_db
• C_gs and C_db

The short-channel effect in a MOSFET is due to:

• The channel length being extended
• The channel length being shortened
• A decrease in threshold voltage
• An increase in current

The channel resistance of a MOSFET is calculated by which formula?

• R = V / I
• R = ρ L / A
• R = 1 / (μ_e C_ox (W / L))
• R = μ_n C_ox (W / L)

What is the body effect in a MOSFET?

• A change in threshold voltage due to the voltage difference between source and substrate
• A change in capacitance due to the voltage difference between terminals
• A change in resistance due to the voltage change between terminals

In the saturation region, the drain current (I_D) of a MOSFET is determined by:

• I_D = β (V_GS - V_TH) V_DS
• I_D = β (V_GS - V_TH)^2
• I_D = β (V_GS - V_TH) / V_DS
• I_D = β (V_GS - V_TH)^2 / 2

How does the channel resistance in a MOSFET affect the performance of an integrated circuit?

• Increases performance
• Decreases performance
• No effect
• Increases stability

How does the capacitance of a MOSFET change in the accumulation region?

• Increases
• Decreases
• Does not change
• Changes unpredictably

What is the hot carrier phenomenon in a MOSFET?

• High charge causing large currents
• Carriers gaining high energy and penetrating the oxide layer
• Resistance decreasing as current increases
• Threshold voltage increasing as temperature rises