This type of failure is due to the deterioration of the design strength of a device resulting from the operation and exposure to environmental fluctuations.

The most complicated among the electrical failure categories.

Which of the following is the illumination source of Transmission Electron Microscope (TEM)?

What is the focus depth (x500) of a light optical microscope?

Which of the following is the voltage source (hardware) of scanning electron microscope (SEM)?

It uses lights that are reflected from the sample?

_______ is a widely used style of semiconductor package mainly used for transistors.

It is based on ball grid array technology. It has thinner contacts and is mainly used in system-on-a-chip designs.

Current at the reversed bias pn junction with the Drain-Source terminal short circuited (0V) of N channel JFET.

The cutoff voltage of a JFET is the voltage that is needed at the gate-source region of the P channel JFET in order to turn it off.

It is the voltage at which the MOSFET channel begins to conduct.

Reduction in x-ray intensity due to attenuation is a function of a linear absorption coefficient and the sample ________

_______ is a type of surface-mount packaging (a chip carrier) used for integrated circuits.

Focus of TEM?

These are the common sources of failures except?

Among the sources of failures, which is the 2nd top priority?

This is the last process in the Failure Analysis Flow?

This is the level process in the Failure Analysis Flow?

It plays a significant role in failure analysis and the starting point of a good and successful failure analysis?

It provides necessary information for technology advancement and for corrective action to improve quality and reliability?

It is used to best described the failure of electronic or mechanical components.

For semiconductor devices, these are failures due to defects during fabrication, improper design of the component, or random failures that have not failed during fabrication screening processes.

FA technique for revealing the internal structure of a device or IC for examination?

For semiconductor devices, stresses due to high temperature, high voltage current, humidity, vibration, mechanical or thermal shock are examples of failures encountered during what period?

Examples of these types of failures are corrosion, electrical leakage, insulation breakdown, cracking of encapsulation due to the deterioration of the material, and cracks in the bond wires.

Approximately 60% of the failures are due to ______

What are the two types of components?

It is used to analyze the characteristics of discrete devices such as diodes and transistors.

Challenges in IC characterization

One of the main failures of integrated circuits (ICs) due to mismatch of thermal expansion coefficients.

Type of package that houses a small semiconducting die, with nanowires attaching the die to the lead frames, allowing for electrical connections to be made to a PCB.

What are Ultrasonic Waves?

Ultrasonic waves refer to sound waves above ________ (not audible to the human ear)

A material preparation in which a process sequence of cutting, rough grinding and fine polishing a specimen at cross section in preparation for an imaging and inspection are done

It causes the transistor to enter the breakdown region where the transistor receives too much voltage across its drain-source terminal that causes the drain-source terminal to break down, which makes the drain current (ID) to drastically increase.

______ is the voltage at which the MOSFET channel begins to conduct. At this voltage, a positive voltage creates an electric field, which attracts electron.

It is a sample preparation equipment that fires electrons at a sample until they are thin enough to be transparent to electron for TEM

It is often referred to as light emission microscopy,

photoemission microscopy, or by the trade name EMMI - EMission MIcroscopy.

It uses ultrasound waves to image interfaces and detect possible defects within optically opaque structures and

components such as chip capacitors, chip resistors, circuit board traces, discrete semiconductor devices, integrated circuits (ICS), and other electronic components.

To create and analyze these ultrasonic waves of SAM, piezoelectric ___________ are used.

They are primary beam electrons that have undergone one or more elastic (billiard ball-type) collisions within the sample and eventually have bounced around enough to re-emerge from the surface they came in.

they are generated by other radiation (the primary radiation). This radiation can be in the form of ions, electrons, or photons with sufficiently high energy, i.e. exceeding the ionization potential.

They are beam electrons that are reflected from the sample by elastic scattering.

It is the smallest interval measurable by a scientific

(especially optical) instrument; the resolving power.

It is the degree of detail visible in a photographic

or television image.

It refers to the state or quality of having or producing clear visual definition.

It refers to the inspection of the sample at higher magnification using an instrument known as an

optical or light microscope.

it is a nondestructive semiconductor failure analysis technique used to examine the interior details of the package. It operates on the principle of dissimilar transmission of X-Rays through different materials.

It a method that enables comparisons between features of

subsequent assemblies and the programmed features of good board assembly to determine if they pass or fail.

It is the voltage between drain-to-source at which FET begins to conduct with no gate voltage applied

It is the voltage between drain-to-source at which FET begins to conduct with no gate voltage applied

It is the leakage current that occurs when the specified voltage is applied across gate and source with drain and source short circuited.

It is the measure of the smallest detail that can be observed

The resolution of the naked eye?

It is the expression of the number of times the sample being examined appears to be enlarged.

Sharp view of the enlarged image of the specimen.

Height of the specimen at which the image appears to be focused / sharp.

Interaction volume is directly proportional to the accelerating voltage.

Energy of electron from atom is lost to atom.

The higher the atomic number of the atoms the more backscattered electrons are ‘bounced back’ out.

The 4th level of Failure Analysis

The final step in doing Failure Analysis

Electrical failures are grouped according to_____?

_________ is one of the features of most SMU with the capability to measure ultra low current up to fA.

_________ is one of the features of most SMU with the capability to protect devices from damage caused by excessive voltage or current.

_________ is one of the features of most SMU with wide coverage of current/voltage with the best resolution

Characteristic acoustic impedance of layers using SAM depends on _______

It is the ratio of reflected to incident pressure amplitude across two media.

It is the value equal to 1- the absolute value of Acoustic Reflection Coefficient

X-ray result depends on the ______

It is the preferred filament because of X-Ray due to high melting point during high voltage application.

It connects the eyepiece to the objective lenses

It supports the tube and connects it to the base

The bottom of the microscope, used for support

A steady light source used in place of a mirror.

The flat platform where you place your slides.

This is the part that holds two or more objective lenses and can be rotated to easily change power.

This is an adjustment that determines how close the objective lens can get to the slide.

It uses lights that passes through (transmitted) from the sample

It uses lights that are reflected from the sample.

It is used for metallurgical and industrial application.

It is used for biological, crystals and plastics inspection.

It is expressed as the product of the density and the speed of sound wave