WorksheetsTHIN FILM TECHNOLOGY UNIT V : CIA III
Total questions: 25
Worksheet time: 13mins
A typical output of a solar cell is...............................
0.1 V
0.26 V
1.1 V
2 V
Which of the following material is used in solar cells?
Barium
Silicon
Silver
Selenium
The efficiency of a solar cell may be in the range
2 to 5%
10 to 15%
30 to 40%
70 to 80%
The term photo voltaic comes from ________
Spanish
Greek
German
English
The volt is the units of emf that was named after its inventor _________
Alessandro volta
Alxender volta
Alexa volta
Alexandro volta
The term photo voltaic is in use since _________
1840
1844
1849
1850
When the source of light is not sun light then the photo voltaic cell is used as ____________
Photo diode
Photo voltaic cell
Photo detector
Photo transmitter
The region where the electrons and holes diffused across the junction is called ________
Depletion Junction
Depletion region
Depletion space
Depletion boundary
The current produce by the solar cell can be given by _________
IL – ID + ISh
IL + ID – ISh
IL + ID + ISh
IL – ID – ISh
Solar cells are made from bulk materials that are cut into wafer of _________ thickness.
120-180μm
120-220μm
180-220μm
180-240μm
__________ photo voltaic devices in the form of thin films.
Cadmium Telluroide
Cadmium oxide
Cadmium sulphide
Cadmium sulphate
__________ is a direct band gap material.
Copper Indium Gallium Selenide
Copper Selenide
Copper Gallium Telluride
Copper Indium Gallium Diselenide
Dye-sensitized solar cells are made from ________ organic dye.
Ruthium melallo
Aniline
Safranine
Induline
The quantum dot used are _______
Cds
CdTe
PbO
GaAs
A FET is a...........controlled device whereas a bipolar transistor is a............controlled device.
Current, voltage
Drain, gate
Gate, drain
Voltage, current
FET acts as constant current source in
Ohmic region
Breakdown region
Pinch off region
Both (b) and (c)
Active matrix display is based on technology which uses
thin-film transistor
mirror
digital light
CRT
In a TFET is a
The channel is lightly doped and gate is lightly doped
The channel is lightly doped and gate is heavily doped
The channel is heavily doped and gate is lightly doped
The channel is heavily doped and gate is heavily doped
n-channel FETs are superior to p-channel FETs because
They have high switching time
Mobility of electrons is greater than that of holes
They consume less power
Mobility of electrons is smaller than that of holes
Which of the following plays an important role in improving device performance of MOSFET?
Dielectric constant
Threshold voltage
Power supply voltage
Gate to drain voltage
In the TFET drain current is directly proportional to ---- gate dielectric.
Dielectric constant
Thickness
Specific resistance
Density of the pinhole
The quality of the interface between the gate dielectric and the semiconductor determines
the interface trap density
Thickness of the material
Specific resistance
Density of the pinhole
The example of wide band gap materials
MnO3
Fe
Si
CO2
In TFET, the semiconductor material typically is the substrate, such as
a silicon wafer
Zirconium
Carbon
paper
A TFT is used in both direct and indirect capture as a base for the image receptor ----------------
Medical radiography
transformer
diode
none of these.
