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QUIZ 2: TRANSISTOR

Total questions: 21

Worksheet time: 27mins

Name
Class
Date
1.

Write your Matrix No.

4 lines
2.

In the following circuit, RG is replaced with a resistor double its original value (R'G = 2RG). The new ID is

a)

Unchanged

b)

Undetermined, need additional information

c)

Double the original ID

d)

Half the original ID

e)

Quadruple the original ID

3.

If the emitter-base junction is forward biased and the collector-base junction is reverse biased, what will be the region of operation for a transistor?

a)

cut off region

b)

saturated region

c)

inverted region

d)

active region

4.

In the BJT amplifier circuit, IC = 1 mA. Estimate the gain, Av (with ro is infinite).

a)

100\approx100

b)

6800\approx-6800

c)

262\approx-262

d)

Need additional information

5.

A JFET is biased such that gm = 1.14 mA/V at ID = 1 mA. If VGS changes with 1 mV, how much the drain current change?

a)

 1.14 A1.14\ A 

b)

 1.14 mA1.14\ mA 

c)

 1.14 μA1.14\ \mu A  

d)

 1.14 pA1.14\ pA  

6.

The Shockley equation for D-MOSFET is

a)

ID = (1 - VGS/VP)2

b)

ID = IDSS(1 - VGS/VP)2

c)

ID = IDSS(1 + VGS/VP)2

d)

ID = IDSS(1 - VGS/VP)1

7.

Which of the following relation is true about gate current that can be applied to the DC analysis of all FET amplifiers?

a)

IG = ID + IS

b)

IG = IS

c)

IG = ID

d)

IG = 0

8.

For a fixed bias configuration of JFET amplifier circuit the ID = 1 mA with VDD = 12 V, determine drain resistance (RS) required if VDS = 10 V.

a)

1 KΩ

b)

1.5 KΩ

c)

2 KΩ

d)

4 KΩ

9.

If a MOSFET is to be used for an amplifier, then it must work in

a)

Cut-off region

b)

Triode region

c)

Saturation region

d)

Both cut-off and triode region can be used

10.

Define a transconductance, gm.

a)

Ratio of change in drain current to change in collector current

b)

Ratio of change in drain current to change in gate to source voltage

c)

Ratio of change in collector current to change in drain current

d)

Ratio of change in collector current to change in gate to source voltage

11.

In an AC equivalent model for an FET circuit, the gmVGS represent for

a)

A pure resistor

b)

Voltage controlled current source

c)

Current controlled current source

d)

Voltage controlled voltage source

12.

Which of the following equation is a mathematical definition of gm0 for JFET?

a)

gm0 = IDSS/Vp

b)

gm0 = 2IDSS/|Vp|

c)

gm0 = IDSS/5Vp

d)

gm0 = IDSS/2Vp

13.

Find the value of gm for JFET with gmo = 4mS, Vp = 4V, VGS = -0.5V?

a)

1 mS

b)

2 mS

c)

3.5 mS

d)

4.5 mS

14.

Which of the following term is NOT a terminal or region of a BJT?

a)

Collector

b)

Base

c)

Emitter

d)

Drain

15.

The correct relation between the BJT parameters  α\alpha  and  β\beta  are related by

a)

 β=1αα\beta=1-\frac{\alpha}{\alpha}  

b)

 β=1+αα\beta=1+\frac{\alpha}{\alpha}   

c)

  α=β+1β\alpha=\beta+\frac{1}{\beta}  

d)

  α=ββ+1\alpha=\frac{\beta}{\beta}+1  

16.

The feature of an equivalent model of a transistor is

a)

it provides individual analysis for different configurations

b)

ac analysis is not possible

c)

it helps in dc analysis

d)

it helps in quicker analysis

17.

Which of the following statement is true in construction of a BJT?

a)

the collector is made physically larger than the emitter region

b)

the collector collects minority charge carriers

c)

the emitter supplies minority carriers

d)

the collector dissipates lesser power

18.

The forward current gain amplification β is given by

a)

IB/IE

b)

IE/IB

c)

IB/IC

d)

IC/IB

19.

In Common-Emitter configuration of BJT, the voltage drop across 5 kΩ resistor connected in the collector circuit is 5 V. Find the value of IB when β = 50.

a)

0.01 mA

b)

0.02 mA

c)

0.03 mA

d)

0.2 mA

20.

Where should be the Q-point set in order to make the transistor is proper biased for an amplifier?

a)

Cut off

b)

Active

c)

Saturation

d)

Breakdown

21.

For a voltage divider bias configuration of BJT amplifier, given that R1 = R2 = 10 kΩ, RC = 4.7 kΩ, RE = 1 kΩ and VCC = 10 V, determine the value of collector current (IC).

a)

0.87 mA

b)

1 mA

c)

10 mA

d)

1 A