WorksheetsQUIZ 2: TRANSISTOR
Total questions: 21
Worksheet time: 27mins
Write your Matrix No.
In the following circuit, RG is replaced with a resistor double its original value (R'G = 2RG). The new ID is
Unchanged
Undetermined, need additional information
Double the original ID
Half the original ID
Quadruple the original ID
If the emitter-base junction is forward biased and the collector-base junction is reverse biased, what will be the region of operation for a transistor?
cut off region
saturated region
inverted region
active region
In the BJT amplifier circuit, IC = 1 mA. Estimate the gain, Av (with ro is infinite).
≈100
≈−6800
≈−262
Need additional information
A JFET is biased such that gm = 1.14 mA/V at ID = 1 mA. If VGS changes with 1 mV, how much the drain current change?
1.14 A
1.14 mA
1.14 μA
1.14 pA
The Shockley equation for D-MOSFET is
ID = (1 - VGS/VP)2
ID = IDSS(1 - VGS/VP)2
ID = IDSS(1 + VGS/VP)2
ID = IDSS(1 - VGS/VP)1
Which of the following relation is true about gate current that can be applied to the DC analysis of all FET amplifiers?
IG = ID + IS
IG = IS
IG = ID
IG = 0
For a fixed bias configuration of JFET amplifier circuit the ID = 1 mA with VDD = 12 V, determine drain resistance (RS) required if VDS = 10 V.
1 KΩ
1.5 KΩ
2 KΩ
4 KΩ
If a MOSFET is to be used for an amplifier, then it must work in
Cut-off region
Triode region
Saturation region
Both cut-off and triode region can be used
Define a transconductance, gm.
Ratio of change in drain current to change in collector current
Ratio of change in drain current to change in gate to source voltage
Ratio of change in collector current to change in drain current
Ratio of change in collector current to change in gate to source voltage
In an AC equivalent model for an FET circuit, the gmVGS represent for
A pure resistor
Voltage controlled current source
Current controlled current source
Voltage controlled voltage source
Which of the following equation is a mathematical definition of gm0 for JFET?
gm0 = IDSS/Vp
gm0 = 2IDSS/|Vp|
gm0 = IDSS/5Vp
gm0 = IDSS/2Vp
Find the value of gm for JFET with gmo = 4mS, Vp = 4V, VGS = -0.5V?
1 mS
2 mS
3.5 mS
4.5 mS
Which of the following term is NOT a terminal or region of a BJT?
Collector
Base
Emitter
Drain
The correct relation between the BJT parameters α and β are related by
β=1−αα
β=1+αα
α=β+β1
α=ββ+1
The feature of an equivalent model of a transistor is
it provides individual analysis for different configurations
ac analysis is not possible
it helps in dc analysis
it helps in quicker analysis
Which of the following statement is true in construction of a BJT?
the collector is made physically larger than the emitter region
the collector collects minority charge carriers
the emitter supplies minority carriers
the collector dissipates lesser power
The forward current gain amplification β is given by
IB/IE
IE/IB
IB/IC
IC/IB
In Common-Emitter configuration of BJT, the voltage drop across 5 kΩ resistor connected in the collector circuit is 5 V. Find the value of IB when β = 50.
0.01 mA
0.02 mA
0.03 mA
0.2 mA
Where should be the Q-point set in order to make the transistor is proper biased for an amplifier?
Cut off
Active
Saturation
Breakdown
For a voltage divider bias configuration of BJT amplifier, given that R1 = R2 = 10 kΩ, RC = 4.7 kΩ, RE = 1 kΩ and VCC = 10 V, determine the value of collector current (IC).
0.87 mA
1 mA
10 mA
1 A
